SSM3J01T

SSM3J01T TOSHIBA | Alldatasheet

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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01T Power Management Switch High Speed Switching Applications /Gb7/G20Small Package /Gb7/G20Low on Resistance : Ron = 0.4 Ω (max) (@VGS = −4 V) : R on = 0.6 Ω (max) (@VGS = −2.5 V) /Gb7/G20Low Gate Threshold Voltage Maximum Ratings (Ta /G3d/G3d/G3d/G3d 25°C) Characteristic Symbol Rating Unit Drain-Source voltage V DS /G2d30 V Gate-Source voltage V GSS /Gb110 V DC I D /G2d1.7 Drain current Pulse IDP (Note2) /G2d3.4 A Drain power dissipation (Ta /G3d 25/Gb0C) PD (Note1) 1250 mW Channel temperature T ch 150 /Gb0C Storage temperature range T stg /G2d55~150 /Gb0C Note 1: Mounted on FR4 board (25.4 mm /Gb4 25.4 mm /Gb4 1.6 t, Cu pad: 645 mm2, t /G3d 10 s) Note 2: The pulse width limited by max channel temperature. Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. The Channel-to-Ambient thermal resistance R th (ch-a) and the drain power dissipation P D vary according to the board material, board area, board thickness and pad area, and are also affected by the environment in which the product is used. When using this device, please take heat dissipation fully into account. Marking Equivalent Circuit Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3S1A Weight: 10 mg (typ.) 1 2 D E

Electrical Characteristics (Ta /G3d/G3d/G3d/G3d 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS V GS /G3d /Gb110 V, VDS /G3d 0 /Gbe /Gbe /Gb11 /G6dA Drain-Source breakdown voltage V (BR) DSS ID /G3d /G2d1 mA, VGS /G3d 0 /G2d30 /Gbe /Gbe V Drain Cut-off current I DSS V DS /G3d /G2d30 V, VGS /G3d 0 /Gbe /Gbe /G2d1 /G6dA Gate threshold voltage V th V DS /G3d /G2d3 V, ID /G3d /G2d0.1 mA /G2d0.6 /Gbe /G2d1.1 V Forward transfer admittance |Y fs| V DS /G3d /G2d3 V, ID /G3d /G2d0.85 A (Note3) 1.2 2.3 /Gbe S Drain-Source ON resistance R DS (ON) I D /G3d /G2d0.85 A, VGS /G3d /G2d4 V (Note3) /Gbe 0.3 0.4 /G57 Drain-Source ON resistance R DS (ON) I D /G3d /G2d0.85 A, VGS /G3d /G2d2.5 V (Note3) /Gbe 0.4 0.6 /G57 Input capacitance C iss V DS /G3d /G2d10 V, VGS /G3d 0, f /G3d 1 MHz /Gbe 240 /Gbe pF Reverse transfer capacitance C rss V DS /G3d /G2d10 V, VGS /G3d 0, f /G3d 1 MHz /Gbe 24 /Gbe pF Output capacitance C oss V DS /G3d /G2d10 V, VGS /G3d 0, f /G3d 1 MHz /Gbe 94 /Gbe pF Turn-on time t on /Gbe/G2036 /Gbe/G20 Switching time Turn-off time t off VDD /G3d /G2d15 V, ID /G3d /G2d0.3 A VGS /G3d 0~/G2d2.5 V, RG /G3d 4.7 /G57 /Gbe/G2037 /Gbe/G20 ns Note3: Pulse test Switching Time Test Circuit Precaution Vth can be expressed as voltage between gate and source when low operating current value is I D /G3d /G2d100 /G6dA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (relationship can be established as follows: VGS (off) /G3c Vth /G3c VGS (on)) Please take this into consideration for using the device. V GS recommended voltage of /G2d2.5 V or higher to turn on this product. ton t off 0 V /G2d2.5 V VDD VDS (ON) tr t f 10% 90% 90% 10% (b) VIN V GS (c) VOUT V DS VDD /G3d /G2d15 V RG /G3d 4.7 /G57 D.U. /G3c/G3d1% VIN: tr, tf /G3c 5 ns COMMON SOURCE Ta /G3d 25°C /G2d2.5 V IN OUT VDD 10 /G6dS RG (a) Test circuit

ID – VDS ID – VGS RDS (ON) – ID RDS (ON) – Ta C – VDS /G2d25°C /G2d10000 /G2d0.01 Common Source VDS /G3d /G2d3 V /G2d100 /G2d1000 /G2d1 /G2d10 /G2d0.1 /G2d1.5 /G2d2 /G2d0.5 /G2d1 /G2d2.5 /G2d3 Ta /G3d 100°C 25°C 0.2 0.4 0.8 0.6 Common Source Ta /G3d 25°C 0 /G2d0.5 /G2d1 /G2d1.5 /G2d2 VGS /G3d /G2d 2.5 V /G2d4 V Common Source ID /G3d /G2d0.85 A 0 150 100 50 VGS /G3d /G2d2.5 V /G2d4 V 0.2 0.4 0.8 0.6 /G2d0.1 1000 100 /G2d100/G2d10 Common Source VGS /G3d 0 f /G3d 1 MHz Ta /G3d 25°C /G2d1 Crss Coss Ciss Common Source Ta /G3d 25°C /G2d1.6 V VGS /G3d /G2d1.4 V /G2d2 /G2d1.8 /G2d1.6 /G2d0.5 /G2d1 /G2d1.5 /G2d2 /G2d4 V /G2d1.8 V /G2d2.0 V /G2d2.2 V /G2d2.5 V /G2d0.6 /G2d0.4 /G2d0.2 /G2d1.2 /G2d1.0 /G2d0.8 /G2d1.4 |Yfs| – ID 0.01 /G2d0.001 0.1 /G2d10 /G2d0.1 /G2d1 /G2d0.01 100 Common Source VDS /G3d /G2d3 V Ta /G3d 25°C Drain-Source on resistance RDS (ON) ( /G57) Drain current I D (A) Drain current I D (mA) Drain-Source on resistance RDS (ON) ( /G57) Drain-source voltage V DS (V) Gate-source voltage V GS (V) Drain current I D (A) Ambient temperature Ta (°C) Forward transfer admittance |Yfs| (S) Drain current I D (A) Capacitance C (pF) Drain-Source voltage V DS (V)

t – ID PD – Ta /G2d0.001 Common Source VDD /G3d /G2d15 V VGS /G3d 0~/G2d2.5 V RG /G3d 4.7 /G57/G20 Ta /G3d 25°C 10000 tr ton tf toff 1000 /G2d0.01 /G2d1 100 /G2d01 1.5 Mounted on FR4 board (25.4 mm /Gb4 25.4 mm /Gb4 1.6 t, Cu Pad: 645 mm2） t /G3d 10 s DC 0.75 25 50 75 125 150 1.25 0.5 0.25 100 /G2d0.01 /G2d0.1 /G2d10 /G2d1 /G2d1 /G2d100 /G2d0.1 /G2d0.001 /G2d10 Mounted on FR4 board (25.4 mm /Gb4 25.4 mm /Gb4 1.6 t, Cu Pad: 645 mm2) DC operation ID max (pulsed) ID max (continuous) 10 ms* 1 ms* 10 s* Ta /G3d 25/Gb0C *: Single nonrepetitive Pulse Ta /G3d 25°C Curves must be derated linearly with increase in temperature. VDSS max Switching time t (ns) Drain power dissipation P D (W) Drain current I D (A) Drain current I D (A) Ambient temperature Ta (°C) Safe operating area Pulse width tw (s) Transient thermal impedance r th (°C /W) rth – tw 0.001 Single pulse Mounted on FR4 board (25.4 mm /Gb4 25.4 mm /Gb4 1.6 t, Cu Pad: 645 mm2) 1000 0.01 0.1 1 10 100 100 1000 Drain-Source voltage V DS (V)

/Gb7/G20TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. /Gb7/G20The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. /Gb7/G20The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. /Gb7/G20The information contained herein is subject to change without notice. 000707EAARESTRICTIONS ON PRODUCT USE