SSM3055

SSM3055 SECOS | Alldatasheet

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Technical content

Features

• Dynamic dv/dt Rating * Simple Drive Requirement * Repetitive Avalanche Rated * Fast Switching Thermal Data Thermal Resistance Junction-ambient A V V A A ID @T A=75 /W eC feefee W /eC eC W VDS VGS ID @T A=25 IDM PD @T A=25 Tj, Tstg Rthj-a ±20 3.2 2.7 0.02 -55~+150 к к к 01-Jun-2002 Rev. A Page 1 of 4 D RoHS Compliant Product

4A, 30V,RDS(ON) 80m N-Channel Enhancement Mode Power Mos.FET E l e c t r i c a l C h a r a c t e r i s t i c s ( T j = 2 5 C U n l e s s o t h e r w i s e s p e c i f i e d ) T o t a l G a t e C h a r g e RD S ( O N ) http://www. SeCoS GmbH. com / Any ch anging of sp eci fication wi l l n ot be informe d in divid u a l P a r a m e t e r S y m b ol M a x .T y p . T e s t C o n d i t i o nM i n . U n i t D r a i n - S o u r c e B r e a k d o w n V o l t a g e B r e a k d o w n V o l t a g e T e m p . C o e f f i c i e n t G a t e T h r e s h o l d V o l t a g e G a t e - S o u r c e L e a k a g e C u r r e n t D r a i n - S o u r c e L e a k a g e C u r r e n t ( T j = 2 5 ) S t a t i c D r a i n - S o u r c e O n - R e s i s t a n c e D r a i n - S o u r c e L e a k a g e C u r r e n t ( T j = 7 0 ) G a t e - S o u r c e C h a r g e G a t e - D r a i n ( " M i l l e r " ) C h a r g e T u r n - o n D e l a y T i m e R i s e T i m e T u r n - o f f D e l a y T i m e F a l l T i m e I n p u t C a p a c i t a n c e O u t p u t C a p a c i t a n c e R e v e r s e T r a n s f e r C a p a c i t a n c e B VD S S B VD S/ T j VG S ( t h ) IG S S ID S S C r s s Q g Q g s Q g d T d( O N ) T d( O f f ) T r C i s s C o s s Tf 3 0 0 . 0 3 7 1 . 0 3. 0 1 0 0 2 5 2 5 0 8 0 1 0 0 5 . 4 1 . 3 3 . 6 3 . 6 1 9 . 8 1 3 3 . 2 2 6 0 1 4 4 1 3 V V n A u A u A m n C n S p F Ω VG S= 0 V VD S= 2 5 V f = 1 . 0 M H z VD D= 1 5 V ID= 1 A VG S= 1 0 V RG= 3 . 3 RD= 1 . 9 Ω Ω ID= 4 A VD S= 2 4 V VG S= 5 V VG S= 1 0 V , ID= 4 A VG S= 4 . 5 V , ID= 3 A VG S= 0 V , ID= 2 5 0 u A VG S= 2 0V± VD S= 3 0 V , VG S= 0 VD S= 2 4 V , VG S= 0 VD S= VG S , ID= 2 5 0 u A R e f e r e n c e t o 2 5 , ID=1 m A S o u r c e - D r a i n D i o d e P a r a m e t e r S y m b ol M a x .T y p . T e s t C o n d i t i o nM i n . U n i t F o r w a r d O n V o l t a g e C o n t i n u o u s S o u r c e C u r r e n t ( B o d y D i o d e ) P u l s e d S o u r c e C u r r e n t ( B o d y D i o d e ) VD S IS IS M VS= 2 A, VG S= 0 V . T j = 2 5 VD= VG= 0 V , V s = 1 . 3 V V A A 1 . 3 2 0 N o t e s : 1 . P u l s e w i d t h L i m i t e d b y s a f e o p e r a t i n g a r e a . 2 . P u l s e w i d t h 3 0 0 u s , d u t y c y c l e 2 % . 0 1- J u n - 2 0 0 2 R e v . A P a g e 2 o f 4 o C o C o C o C o Ω

4A, 30V,RDS(ON) 80m N-Channel Enhancement Mode Power Mos.FET Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode Ω 01-Jun-2002 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Characteristics Curve

4A, 30V,RDS(ON) 80m N-Channel Enhancement Mode Power Mos.FET Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Circuit Fig 12. Gate Charge Waveform Ω 01-Jun-2002 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual