SSM20P02H

SSM20P02H SSC | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 6

Technical content

www.SiliconStandard.com 1 of 6 SSM 20P02H,J P-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple drive requirement BVDSS -20V 2.5V gate drive capability RDS(ON) 52m Ω Fast switching ID -18A

Description

ID@TA=25℃ A ID@TA=100℃ A IDM A PD@TA=25℃ W W/ ℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-c Thermal Resistance Junction-case Max. 4.0 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃/W -55 to 150 Linear Derating Factor Thermal Data Parameter Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range Continuous Drain Current, VGS @ 10V -14 Pulsed Drain Current1 -50 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V -18 0.25 31.25 -55 to 150 Rating - 20 ± 12 G D S G D S TO-252(H) G D S TO-251(J) Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for all commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (SSM20P02J) is available for low-profile applications. Rev.2.01 6/26/2003

www.SiliconStandard.com 2 of 6 SSM 20P02H,J Electrical Characteristics @ Tj=25oC (unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -20 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.03 -V / ℃ RDS(ON) Static Drain-Source On-Resistance V GS=-4.5V, ID=-8A - - 52 mΩ VGS=-2.5V, ID=-5A - - 85 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -0.5 - - V gfs Forward Transconductance V DS=-10V, ID=-8A - 15 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-20V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=150oC) VDS=-16V, VGS=0V - - -25 uA IGSS Gate-Source Leakage V GS= ± 12 - - nA Qg Total Gate Charge2 ID=-8A - 13.5 - nC Qgs Gate-Source Charge V DS=-16V - 2.1 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 1.6 - nC td(on) Turn-on Delay Time2 VDS=-10V - 12 - ns tr Rise Time I D=-8A - 20 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=-4.5V - 45 - ns tf Fall Time R D=1.25Ω -2 7- ns Ciss Input Capacitance V GS=0V - 1050 - pF Coss Output Capacitance V DS=-16V - 410 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 110 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=-1.2V - - -10 A ISM Pulsed Source Current ( Body Diode )1 - - -50 A VSD Forward On Voltage2 Tj=25℃, IS=-10A, VGS=0V - - -1.2 V Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. ±100 Rev.2.01 6/26/2003

www.SiliconStandard.com 3 of 6 SSM 20P02H,J Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 0246 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T C =25 o C -4.5V -4.0V -3.5V -3.0V -2.5V V GS= -2.0V 0 2.5 5 7.5 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T C =150 o C -4.5V -4.0V -3.5V -3.0V -2.5V VGS= -2.0V 120 160 0369 1 2 -V GS (V) RDS(ON) (m ΩΩΩΩ) I D = -8A T c =25 ℃℃℃℃ 0.2 0.8 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D = -8A V GS = -4.5V Rev.2.01 6/26/2003

www.SiliconStandard.com 4 of 6 SSM 20P02H,J Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance 25 50 75 100 125 150 T c , Case Temperature ( o C) -ID , Drain Current (A) 0 30 60 90 120 150 T c , Case Temperature ( o C) PD (W) 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (R thjc) PDM Duty Factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty Factor = 0.5 Single Pulse 100 0.1 1 10 100 -V DS (V) -ID (A) T C =25 °C Single Pulse 100us 1ms 10ms 100ms DC Rev.2.01 6/26/2003

www.SiliconStandard.com 5 of 6 SSM 20P02H,J Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0 5 10 15 20 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D = -8A V DS = -16V 100 1000 10000 1 7 13 19 -V DS (V) C (pF) f=1.0MHz Ciss Coss Crss 100 -V SD (V) -IS(A) T j =25 o C Tj =150 o C 0.3 0.6 0.9 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) -VGS(th) (V) Rev.2.01 6/26/2003

www.SiliconStandard.com 6 of 6 Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expre ss or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. SSM 20P02H,J Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform td(on) tr td(off) tf VDS VGS 10% 90% Q VG QGS QGD QG Charge -4.5V 0.8 x RATED VDS TO THE OSCILLOSCOPED G S VDS VGS IDI G -1~-3mA 0.5 x RATED VDS TO THE OSCILLOSCOPE -4.5 V D G S VDS VGS RG RD Rev.2.01 6/26/2003