SSM20G45EGH

SSM20G45EGH SSC | Alldatasheet

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www.SiliconStandard.com 1 of 7 N-channel Insulated-Gate Bipolar Transistor V CES 450V VCE(sat) 5V typ. ICP 130A The SSM20G45E acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for use in short-duration, high-current strobe Pb-free; RoHS-compliant TO-251 (IPAK) PRODUCT SUMMARY DESCRIPTION Notes: 1.Pulse width must be limited to avoid exceeding the safe operating area. 2.Pulse width <300us, duty cycle <2%. applications, such as still-camera flash. The SSM20G45EGH is in a TO-252 package, which is widely used for commercial and industrial surface-mount applications. The through-hole version, the SSM20G45EGJ in TO-251, is available for vertical mounting, where a small footprint and TO-252 (DPAK) G D S TO-252 (suffix H) G D S TO-251 (suffix J) is required on the board, and/or an external heatsink is to be attached. These devices are manufactured with an advanced process, providing improved on-resistance and switching performance. The gate has internal ESD protection. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Units VCES VGE V VGEP ICP A PD TSTG TJ Symbol Parameter Value Units RΘ JC Maximum thermal resistance, junction-case 6 °C/W Collector-emitter voltage 450 V Gate-emitter voltage ±6 Pulsed gate-emitter voltage ±8 V Pulsed collector current1 130 Total power dissipation, TC = 25°C 20 W -55 to 150 °C Operating junction temperature range -55 to 150 °C THERMAL CHARACTERISTICS Storage temperature range SSM20G45EGH/J 5/16/2006 Rev.3.01

5/16/2006 Rev.3.01 ELECTRICAL CHARACTERISTICS Tj = 25°C (unless otherwise specified) Symbol Min. Typ. Max. Units IGES - - 10 uA ICES - - 10 uA VCE(sate -58V VGE(th) - - 1.2 V Qg -5 1- nC Qge -2- nC Qgc - 5.4 - nC td(on) - 5.5 - ns tr -7 2- ns td(off) - 640 - ns tf - 2.6 - us Cies - 2095 - pF Coes - 145 - pF Cres -3 5- pF VCC=200V Gate-emitter charge Parameter Reverse transfer capacitance VCE=450V, VGE=0V VGE=4.5V, ICP=130A (Pulsed) VCE=VGE, IC=250uA IC=40A VCE=300V VGE=5V VCE=25V Test Conditions Collector-emitter saturation voltage Gate threshold voltage Total gate charge Gate-emitter leakage current Collector-emitter leakage current VGE=6V, VCE=0V Turn-off delay time VGE=0V IC=40A RG=25Ω Rise time Gate-collector charge Turn-on delay time VGE=5V Fall fime Input capacitance Output capacitance f=1.0MHz www.SiliconStandard.com 2 of 7

www.SiliconStandard.com 3 of 7 SSM20G45EGH/J 5/16/2006 Rev.3.01 Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Collector Current vs. Fig 4. Collector- Emitter Saturation Voltage Gate-Emitter Voltage vs. Case Temperature 120 160 024681 01 2 V CE , Collector Emitter Voltage (V) IC , Collector Current (A) T C =25 o C V G =5.0V V G =4.5V V G =4.0V V G =3.0V V G =2.0V V G =1.0V 120 024681 01 2 V CE , Collector-Emitter Voltage (V) IC , Collector Current (A) T C =150 o C V G =5.0V V G =4.5V V G =4.0V V G =3.0V V G =2.0V V G =1.0V 120 160 0123456 V GE , Gate- Emitter Voltage (V) IC , Collector Current (A) T C =25 o C T C =70 o C T C =100 o C T C =150 o C V CE =8V 0 20 40 60 80 100 120 140 160 T C , Case Temperature ( o C ) VCE(sat) , Saturation Voltage (V) I C = 130A I C = 100A I C = 70A I C = 35A V GE = 4.5 V

www.SiliconStandard.com 4 of 7 SSM20G45EGH/J 5/16/2006 Rev.3.01 Fig 5. Gate-Emitter Cut-Off Voltage Fig 6. Safe Operating Area vs. Case Temperature Fig 7. Collector vs. Collector-Emitter Voltage Fig 8. Gate Charge Waveform 0.5 1.5 -50 0 50 100 150 T C , Case Temperature ( o C ) VGE(th) Gate Threshold Voltage (V) 0 153 04 56 07 5 Q G , Gate Charge (nC) VGE , Gate-Emitter Voltage (V) I CP =40A V CE =300V 120 160 02468 V GE , Gate-Emitter Voltage (V) ICP , Peak Collector Current (A) V G =4.5V T C = 25 o C 100 1000 10000 1 8 15 22 29 V CE , Collector-Emitter Voltage (V) Capacitance (pF) f=1.0MHz Cies Coes Cres

www.SiliconStandard.com 5 of 7 SSM20G45EGH/J 5/16/2006 Rev.3.01 Fig 9. Switching Time Test Circuit Fig 10. Switching Time Waveform Fig 11. Gate Charge Test Circuit Fig 12. Application Test Circuit td(on) tr td(off) tf VCE VGE 10% 90% V =200V TO THE OSCILLOSCOPE C G E V CE VGE R R C G CC 300V TO THE OSCILLOSCOPE C G VCE VGE I CIG 1~3 mA E VCM VCM = 300V CM = 160uF ICP = 130A VG = 5V CM RG Vtrig IGBT VG Flasher

www.SiliconStandard.com 6 of 7 PHYSICAL DIMENSIONS: TO-251 (I-PAK) SSM20G45EGH/J 5/16/2006 Rev.3.01 Millimeters MIN NOM MAX A 2.20 2.30 2.40 A1 0.90 1.20 1.50 B1 0.50 0.60 0.70 B2 0.60 0.72 0.90 c 0.45 0.50 0.60 c1 0.45 0.50 0.55 D 6.40 6.60 6.80 D1 5.20 5.35 5.50 E 6.80 7.00 7.20 E1 5.40 5.60 5.80 E2 1.40 1.50 1.60 e -- 2.30 -- F 7.20 7.50 7.80 F1 1.50 1.60 1.80 1.All dimensions are in m illimeters. 2.Dimensions do not include mold protrusions. SYMBOLSA c e D E F e PHYSICAL DIMENSIONS: TO-252 (D-PAK) MILLIMETERS TO-252-3L MAX. 2.80A S Y M B O L MIN. 1.80 0.13 5.90 0.65 0.89 6.30 7.00 1.00 0.00 4.80 0.35 0.40 5.10 6.00 7.80 1.00 0.50 0.50 0.40 SEE VIEW B A H AA e E D L3L4 c BASE METAL WITH PLATING b SECTION A-A SEATING PLANE VIEW B L GAUGE PLANE θ 0° 8°θ 11.05 2.55 2.03 1.20

2.30 BSC

b E D c H L L1 2.20 3.05 L2 0.35 0.65 e

Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expre ss or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. www.SiliconStandard.com 7 of 7 PART MARKING PACKING: Moisture sensitivity level MSL3 TO-251: 1000pcs in tubes packed inside a moisture barrier bag (MBB). PART NUMBER: 20G45EGH or 20G45EGJ XXXXXX YWWSSS SSM20G45EGH/J 5/16/2006 Rev.3.01 DATE/LOT CODE: (YWWSSS) Y = last digit of the year WW = week SSS = lot code sequence TO-252: 3000 pcs in antistatic tape on a reel packed inside a moisture barrier bag (MBB).