SSM2019BRWZ

DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 10

Technical content

a SSM2019 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective companies. Tel: 781/329-4700 www.analog.com Fax: © Analog Devices, Inc. All rights reserved. REV. Self-Contained Audio Preamplifier FUNCTIONAL BLOCK DIAGRAM RG1 RG2 5k/H9024 5k/H9024 /H115471 5k/H9024 5k/H9024 5k/H9024 OUT 5k/H9024 /H115471 REFERENCE V– +IN –IN GENERAL DESCRIPTION The SSM2019 is a latest generation audio preamplifier, combin- ing SSM preamplifier design expertise with advanced processing. The result is excellent audio performance from a monolithic device, requiring only one external gain set resistor or potentiom- eter. The SSM2019 is further enhanced by its unity gain stability. Key specifications include ultra-low noise (1.5 dB noise figure) and THD (<0.01% at G = 100), complemented by wide bandwidth and high slew rate. Applications for this low cost device include microphone pream- plifiers and bus summing amplifiers in professional and consumer audio equipment, sonar, and other applications requiring a low noise instrumentation amplifier with high gain capability.

FEATURES

Excellent Noise Performance: 1.0 nV/ ÷Hz or 1.5 dB Noise Figure Ultra-low THD: < 0.01% @ G = 100 Over the Full Audio Band Wide Bandwidth: 1 MHz @ G = 100 High Slew Rate: 16 V/ /H9262s @ G = 10

10 V rms Full-Scale Input,

G = 1, V S = /H1155018 V Unity Gain Stable True Differential Inputs Subaudio 1/f Noise Corner 8-Lead PDIP or 16-Lead SOIC Only One External Component Required Very Low Cost Extended Temperature Range: –40 /H11543C to +85/H11543C

APPLICATIONS

8-Lead PDIP (N Suffix) 8-Lead Narrow Body SOIC (RN Suffix) * TOP VIEW (Not to Scale) RG1 –IN +IN RG2 OUT REFERENCEV– SSM2019 16-Lead Wide Body SOIC (RW Suffix) TOP VIEW (Not to Scale) NC = NO CONNECT NC RG1 NC –IN +IN NC NC NC RG2 NC NC OUT REFERENCE NC SSM2019 *Consult factory for availability. A 2011 781/461-3113

REV. –2– SSM2019–SPECIFICATIONS (VS = /H1155015 V and –40 /H11543C £ TA £ +85/H11543C, unless otherwise noted. Typical specifications apply at TA = 25/H11543C.) Parameter Symbol Conditions Min Typ Max Unit DISTORTION PERFORMANCE VO = 7 V rms RL = 2 kW Total Harmonic Distortion Plus Noise THD + N f = 1 kHz, G = 1000 0.017 % f = 1 kHz, G = 100 0.0085 % f = 1 kHz, G = 10 0.0035 % f = 1 kHz, G = 1 0.005 % BW = 80 kHz NOISE PERFORMANCE Input Referred Voltage Noise Density e n f = 1 kHz, G = 1000 1.0 nV/÷Hz f = 1 kHz, G = 100 1.7 nV/÷Hz f = 1 kHz, G = 10 7 nV/÷Hz f = 1 kHz, G = 1 50 nV/÷Hz Input Current Noise Density in f = 1 kHz, G = 1000 2 pA/÷Hz DYNAMIC RESPONSE Slew Rate SR G = 10 16 V/ms RL = 2 kW CL = 100 pF Small Signal Bandwidth BW–3 dB G = 1000 200 kHz G = 100 1000 kHz G = 10 1600 kHz G = 1 2000 kHz INPUT Input Offset Voltage VIOS 0.05 0.25 mV Input Bias Current I B VCM = 0 V 3 10 mA Input Offset Current Ios VCM = 0 V ± 0.001 ± 1.0 mA Common-Mode Rejection CMR VCM = ± 12 V G = 1000 110 130 dB G = 100 90 113 dB G = 10 70 94 dB G = 1 50 74 dB Power Supply Rejection PSR VS = ± 5 V to ± 18 V G = 1000 110 124 dB G = 100 110 118 dB G = 10 90 101 dB G = 1 70 82 dB Input Voltage Range IVR ± 12 V Input Resistance RIN Differential, G = 1000 1 MW G = 1 30 MW Common Mode, G = 1000 5.3 MW G = 1 7.1 MW OUTPUT Output Voltage Swing VO RL = 2 kW, TA = 25∞C ± 13.5 ± 13.9 V Output Offset Voltage VOOS 43 0 m V Maximum Capacitive Load Drive 5000 pF Short Circuit Current Limit I SC Output-to-Ground Short ± 50 mA Output Short Circuit Duration Continuous sec GAIN Gain Accuracy RG = 10 kW TA = 25∞C G – 1 R G = 10 W , G = 1000 0.5 0.1 dB RG = 101 W, G = 100 0.5 0.2 dB RG = 1.1 kW, G = 10 0.5 0.2 dB RG = /H11557, G = 1 0.1 0.2 dB Maximum Gain G 70 dB REFERENCE INPUT Input Resistance 10 kW Voltage Range ± 12 V Gain to Output 1 V/V POWER SUPPLY Supply Voltage Range VS ± 5 ± 18 V Supply Current I SY VCM = 0 V, RL = /H11557 ± 4.6 ± 7.5 mA VCM = 0 V, VS = ± 18 V, RL = /H11557 ± 4.7 ± 8.5 mA Specifications subject to change without notice. A

REV. SSM2019 –3– ABSOLUTE MAXIMUM RATINGS 1 Thermal Resistance2 NOTES

1 Stresses above those listed under Absolute Maximum Ratings may cause perma-

nent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 qJA is specified for worst-case mounting conditions, i.e., qJA is specified for device in socket for PDIP; qJA is specified for device soldered to printed circuit board for SOIC package. FREQUENCY – Hz THD + N – % 0.0001 0.001 0.01 0.1 20 100 1k 10k 20k /H1155015V VS /H1155018V 7Vrms VO 10Vrms RL 600/H9024 BW = 80kHz G = 10 G = 1000 G = 100 G = 1 TPC 1. Typical THD + Noise vs. Gain FREQUENCY – Hz RTI, VOLTAGE NOISE DENSITY – nV/ Hz 0.1 11 0 100 1k 10k 100 TA = 25/H11543C VS = /H1155015V G = 1000 TPC 2. Voltage Noise Density vs. Frequency WARNING! ESD SENSITIVE DEVICE CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the SSM2019 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. Typical Performance Characteristics A

REV. SSM2019 –4– GAIN 10 100 100 RTI VOLTAGE NOISE DENSITY – nV/ Hz 0.1 TA = 25 C VS = /H1155015V f = 1kHz OR 10kHz TPC 3. RTI Voltage Noise Density vs. Gain LOAD RESISTANCE – /H9024 10 1k 10k OUTPUT VOLTAGE – V 100k G = 1 G 10 TA = 25 C VS = /H1155015V 100 TPC 6. Output Voltage vs. Load ResistanceCMRR – dB 10 100k 100 120 140 160 180 200 100 1k 10k G = 1000 G = 100 G = 10 G = 1 /H9004VCM = 100mV VS = /H1155015V TA = 25/H11543C FREQUENCY– Hz TPC 9. CMRR vs. Frequency FREQUENCY – Hz 100 IMPEDANCE – /H9024 100 1M1k 10k 100k TPC 4. Output Impedance vs. Frequency SUPPLY VOLTAGE (V+ – V–) – V 10 30 INPUT SWING (VIN+ – VIN–) – V TA = 25 C f = 100kHz 400 TPC 7. Input Voltage Range vs. Supply Voltage FREQUENCY – Hz 100 1k 10k +PSRR – dB /H9004VCM = 100mV TA = 25 C VS = /H1155015V 100k G = 1 150 G = 1000 G = 10 G = 100 125 100 TPC 10. Positive PSRR vs. Frequency FREQUENCY – Hz 100 PEAK-TO-PEAK VOLTAGE – V 1k 10k 100k TA = 25 C RL = 2k/H9024 VS = /H1155015V GAIN 10 GAIN = 1 TPC 5. Maximum Output Swing vs. Frequency SUPPLY VOLTAGE (V+ – V–) – V 10 30 OUTPUT SWING (VOUT+ – VOUT–) – V TA = 25 C 400 TPC 8. Output Voltage Range vs. Supply Voltage FREQUENCY – Hz 100 1k 10k –PSRR – dB /H9004VS = 100mV TA = 25 C VS = /H1155015V 100 100k G = 1 150 G = 1000 G = 10 G = 100 125 TPC 11. Negative PSRR vs. Frequency A

REV. –5– SSM2019 TEMPERATURE – /H11543C VIOS – mV –50 V+/V– = /H1155015V 0.005 0.010 0.015 0.020 0.025 0.030 0.035 0.040 –25 0 25 50 75 100 TPC 12. V IOS vs. Temperature SUPPLY VOLTAGE (VCC – VEE) – V VOOS – mV 0 51 0 2 03 0 3 54 0 –20 –30 –10 15 25 TA = 25/H11543C TPC 15. V OOS vs. Supply Voltage TEMPERATURE – /H11543C SUPPLY CURRENT – mA –50 –25 0 25 50 75 100 TPC 18. Supply Current vs. Temperature SUPPLY VOLTAGE (VCC – VEE) – V VIOS – mV –0.06 0 10 20 25 30 35 4051 5 –0.05 –0.04 –0.03 –0.02 –0.01 0.01 0.02 TA = 25/H11543C TPC 13. V IOS vs. Supply Voltage TEMPERATURE – /H11543C IB – /H9262A –50 –25 0 25 50 75 100 V+/V– = /H1155015V IB+ OR IB– TPC 16. I B vs. Temperature SUPPLY VOLTAGE (VCC – VEE) – V SUPPLY CURRENT – mA 05 1 0 20 30 35 40 15 25 TA = 25/H11543C TPC 19. Supply Current vs. Supply Voltage TEMPERATURE – /H11543C VOOS – mV –25–50 25 75 100 V+/V– = 15V 05 0 TPC 14. V OOS vs. Temperature SUPPLY VOLTAGE (VCC – VEE) – V IB – /H9262A 10 20 30 40 TA = 25/H11543C TPC 17. I B vs. Supply Voltage SUPPLY VOLTAGE – V SUPPLY CURRENT – mA /H1155050 /H1155010 /H1155015 /H1155020 TA = 25 C TPC 20. I SY vs. Supply Voltage A

are summed together to produce a high effective noise gain. the circuit of Figure 5 is recommended. and 3 may be directly grounded.

2 AND 3

Figure 5. Bus Summing Amplifier

–10– REV. A CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN. COMPLIANT TO JEDEC STANDARDS MS-012-AA 012407-A 0.25 (0.0098) 0.17 (0.0067) 1.27 (0.0500) 0.40 (0.0157) 0.50 (0.0196) 0.25 (0.0099) 45° 1.75 (0.0688) 1.35 (0.0532) SEATING PLANE 0.25 (0.0098) 0.10 (0.0040) 5.00 (0.1968) 4.80 (0.1890) 4.00 (0.1574) 3.80 (0.1497) 1.27 (0.0500) BSC 6.20 (0.2441) 5.80 (0.2284) 0.51 (0.0201) 0.31 (0.0122) COPLANARITY 0.10 Figure 8. 8-Lead Standard Small Outline Package [SOIC_N]

1 Z = RoHS Compliant Part

REVISION HISTORY

6/11—Rev. 0 to Rev. A 2/03—Revision 0: Initial Version ©2003–2011 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the prop erty of their respective owners. D02718-0-6/11(A)