SSM1K2N20 SECOS | Alldatasheet
Document overview
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Technical content
1A, 200V , R DS(O/glyph1197) 1.2ΩΩ ΩΩ /glyph1197-Channel Enhancement Mode Power MOSFET 22-Dec-2016 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSM1K2N20 is the highest performance trench dual N-ch MOSFETs with extreme high cell density, which provide excellent R DS(ON) and gate charge for most of the synchronous buck converter applications . The SSM1K2N20 meet the RoHS and Green Product requirement with full function reliability approved.
FEATURES
/circle6 Advanced High Cell Density Trench Technology /circle6 Super Low Gate Charge /circle6 Green Device Available
PACKAGE INFORMATION
SOT-223 2.5K 13 inch ABSOLUTE MAXIMUM RATINGS (T A=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 200 V Gate-Source Voltage VGS ±20 V TA=25°C 1 A Continuous Drain Current @VGS =10V 1 TA=70°C ID 0.8 A Pulsed Drain Current 2 IDM 4 A Total Power Dissipation 1 T A=25°C P D 2.5 W Operating Junction and Storage Temperature Range TJ, T STG -55~150 °C Thermal Resistance Rating t≦≦ ≦≦10sec 50 Maximum Thermal Resistance from Junction to Ambient 1 Steady State 83 Maximum Thermal Resistance from Junction to Ambient RθJA 125 °C / W G S D SOT-223 Top View A M B D LK F G H J E C A 6.20 6.40 G 0.00 0.10 B 6.83 7.07 H 2.00 REF. C 3.30 3.70 J 0.25 0.35 D 1.50 1.70 K - E 4.50 4.70 L 2.30 REF. F 0.66 0.82 M 2.90 3.10
1A, 200V , R DS(O/glyph1197) 1.2ΩΩ ΩΩ /glyph1197-Channel Enhancement Mode Power MOSFET 22-Dec-2016 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS
(T J=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Drain-Source Breakdown Voltage BV DSS 200 - - V V GS =0, I D =250uA Gate Threshold Voltage V GS(th) 1 - 3 V V DS =VGS , I D =250uA Forward Transfer conductance gfs - 2.8 - S V DS =10V, I D =1A Gate-Source Leakage Current IGSS - - ±100 nA V GS =±20V Drain-Source Leakage Current IDSS - - 1 uA V DS =160V, V GS =0 - - 1.2 Ω V GS =10V, I D =1A Static Drain-Source On-Resistance 3 RDS(ON) - - 1.7 Ω V GS =4.5V, I D =0.5A Total Gate Charge Q g - 8.5 - Gate-Source Charge Q gs - 1.1 - Gate-Drain (“Miller”) Charge Qgd - 2.1 - nC ID =1A VDS =160V VGS =10V Turn-On Delay Time T d(on) - 4 - Rise Time T r - 6 - Turn-Off Delay Time T d(off) - 16 - Fall Time T f - 6.5 - Ns VDD =100V ID =1A VGS =10V RG =3.3Ω Input Capacitance C iss - 225 - Output Capacitance C oss - 50 - Reverse Transfer Capacitance Crss - 15 - pF VGS =0 VDS =25V f=1MHz Source-Drain Diode Continuous Source Current 1 I S - - 1 Pulsed Source Current 2 I SM - - 4 A Forward On Voltage 3 V SD - - 1.2 V IS=1A, V GS =0V Reverse Recovery Time trr - 90 - nS Reverse Recovery Charge Qrr - 280 - nC IF=1A , dI/dt=100A/µs , TJ=25°C Notes: 1. Surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2. The power dissipation is limited by 150°C junction temperature. 3. Pulse test : Pulse width ≦ 300us, Duty cycle ≦ 2%.
1A, 200V , R DS(O/glyph1197) 1.2ΩΩ ΩΩ /glyph1197-Channel Enhancement Mode Power MOSFET 22-Dec-2016 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TYPICAL CHARACTERISTIC CURVES
1A, 200V , R DS(O/glyph1197) 1.2ΩΩ ΩΩ /glyph1197-Channel Enhancement Mode Power MOSFET 22-Dec-2016 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TYPICAL CHARACTERISTIC CURVES