SSM14N956L TOSHIBA | Alldatasheet

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MOSFETs Silicon N-Channel MOS SSM14N956L Start of commercial production 2022-06 1. Applications

  • Battery protection circuits 2. Features (1) Low source-source on-resistance : RSS(ON) = 1.1 mΩ (typ.) (@VGS = 3.8 V) : RSS(ON) = 1.0 mΩ (typ.) (@VGS = 4.5 V) (2) RoHS Compatible (Note 1) (3) Halogen-free Note 1: The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 3. Packaging and Pin Assignment TCSPED-302701 2023-03-23 Rev.3.0 ©2022-2023 Toshiba Electronic Devices & Storage Corporation
  1. Absolute Maximum Ratings (Note) (Unless otherwise specified, T a = 25 ) Characteristics Source-source voltage Gate-source voltage Source current (DC) Source current (pulsed) Power dissipation Power dissipation Channel temperature Storage temperature (t ≤ 10 µs) (t ≤ 10 s) (Note 1) (Note 2) (Note 2) Symbol VSSS VGSS IS ISP PD Tch Tstg Rating 20.0 200 1.33 2.44 150 -55 to 150 Unit V V A W Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width ≤ 10 µs, Duty ≤ 1 % Note 2: Device mounted on an 25 mm × 27.5 mm, t = 1.6 mm, Cu Pad: 35 µm, 407 mm2, FR4 glass epoxy board Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables, operators, soldering irons and other objects should be protected against anti-static discharge. Note: The channel-to-ambient thermal resistance, R th(ch-a), and the drain power dissipation, P D, vary according to the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account. 5. Safety Precautions This section lists important precautions which users of semiconductor devices (and anyone else) should observe in order to avoid injury to human body and damage to property, and to ensure safe and correct use of our products. [Handling Precaution for MOSFET in use of Protection Circuit for Battery Pack] Use a unit, for example PTC Thermistor, which can shut off the power supply if a short-circuit occurs. If the power supply is not shut off on the occurring short-circuit, a large short-circuit current will flow continuously, which may cause the device to catch fire ore smoke. The product listed in this document is intended for usage in Lithium Ion Battery charge and discharge control application. So it is responsible for customer when using the product in the different application. 2023-03-23 Rev.3.0 ©2022-2023 Toshiba Electronic Devices & Storage Corporation
  1. Electrical Characteristics 6.1. Static Characteristics (Unless otherwise specified, T a = 25 ) Characteristics Gate-source leakage current Source-source current (zero-gate voltage) Source-source breakdown voltage Gate threshold voltage Source–source on-resistance Body diode forward voltage (Note 1) (Note 2) (Note 2) Symbol IGSS ISSS V(BR)SSS Vth RSS(ON) VF(S-S) Test Condition VSS = 0 V, VGS = ±8 V VSS = 12 V, VGS = 0 V IS = 1 mA, VGS = 0 V VSS = 6 V, IS = 1.57 mA IS = 10 A, VGS = 4.5 V IS = 10 A, VGS = 3.8 V IS = 10 A, VGS = 3.1 V IS = 10 A, VGS = 2.5 V IF = 10 A, VGS = 0 V Min 0.35 0.70 0.75 0.80 0.90 Typ. 0.9 1.00 1.10 1.25 1.60 0.7 Max 1.4 1.35 1.50 2.15 3.20 1.2 Unit µA V mΩ V Note 1: Let Vth be the voltage applied between gate and source that causes the source current (IS) to below (1.57 mA for this device). Then, for normal switching operation, VGS(ON) must be higher than Vth, and VGS(OFF) must be lower than Vth. This relationship can be expressed as: VGS(OFF) < Vth < VGS(ON). Take this into consideration when using the device. Note 2: Pulse measurement. 2023-03-23 Rev.3.0 ©2022-2023 Toshiba Electronic Devices & Storage Corporation

6.2. Dynamic Characteristics (Unless otherwise specified, T a = 25 ) Characteristics Switching time (turn-on delay time) Switching time (rise time) Switching time (turn-off delay time) Switching time (fall time) Symbol td(on) tr td(off) tf Test Condition VDD = 6 V, IS = 10.0 A, VGS = 0 to 4.0 V, RG = 50 Ω, RL = 0.6 Ω Duty ≤ 1 %, VIN: tr, tf < 5 ns Common source, See Chapter 6.3 VDD = 6 V, IS = 10.0 A, VGS = 0 to 4.0 V, RG = 50 Ω, RL = 0.6 Ω Duty ≤ 1 %, VIN: tr, tf < 5 ns Common source, See Chapter 6.3 VDD = 6 V, IS = 10.0 A, VGS = 0 to 4.0 V, RG = 50 Ω, RL = 0.6 Ω Duty ≤ 1 %, VIN: tr, tf < 5 ns Common source, See Chapter 6.3 VDD = 6 V, IS = 10.0 A, VGS = 0 to 4.0 V, RG = 50 Ω, RL = 0.6 Ω Duty ≤ 1 %, VIN: tr, tf < 5 ns Common source, See Chapter 6.3 Min Typ. 1.0 1.3 3.8 2.1 Max Unit µs µs µs µs 6.3. Switching Time Test Circuit Fig. 6.3.1 Switching Time Test Circuit Fig. 6.3.2 Input Waveform/Output Waveform 6.4. Gate Charge Characteristics (Unless otherwise specified, T a = 25 ) Characteristics Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain charge Symbol Qg Qgs1 Qgd Test Condition VDD = 6 V, IS = 20.0 A, VGS = 4.0 V Min Typ. Max Unit nC 2023-03-23 Rev.3.0 ©2022-2023 Toshiba Electronic Devices & Storage Corporation

  1. Marking Fig. 7.1 Marking 8. Equivalent Circuit 2023-03-23 Rev.3.0 ©2022-2023 Toshiba Electronic Devices & Storage Corporation
  1. Characteristics Curves (Note) Fig. 9.1 IS - V SS Fig. 9.2 RSS(ON) - I S Fig. 9.3 IS - V GS Fig. 9.4 RSS(ON) - V GS Fig. 9.5 IF - V F Fig. 9.6 IGSS - V GS 2023-03-23 Rev.3.0 ©2022-2023 Toshiba Electronic Devices & Storage Corporation

Fig. 9.7 ISSS - V SS Fig. 9.8 Dynamic Input Characteristics Fig. 9.9 rth - t w Fig. 9.10 Safe Operating Area Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 2023-03-23 Rev.3.0 ©2022-2023 Toshiba Electronic Devices & Storage Corporation

Unit: mm Weight: 4.05 mg (typ.) Package Name(s) Nickname: TCSPED-302701 2023-03-23 Rev.3.0 ©2022-2023 Toshiba Electronic Devices & Storage Corporation

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