SSM1333GU

SSM1333GU SSC | Alldatasheet

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www.SiliconStandard.com 1 of 5 P-channel Enhancement-mode Power MOSFET BVDSS -20V RDS(ON) 600mΩ ID -550mA The SSM1333GU acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as drivers, ABSOLUTE MAXIMUM RATINGS VDS VGS ID IDM PD W/°C TSTG TJ Symbol Parameter Value Units RΘJA Maximum thermal resistance, junction-ambient 360 °C/W Symbol Parameter Value Units Drain-source voltage -20 V Gate-source voltage Continuous drain current 3, TA = 25°C -550 mA TA = 70°C -440 mA Pulsed drain current 1,2 -2.5 A Operating junction temperature range -55 to 150 °C Linear derating factor 0.003 Storage temperature range Total power dissipation 3, TA = 25°C 0.35 W -55 to 150 °C THERMAL CHARACTERISTICS ± 12 V Pb-free; RoHS-compliant SOT-323/SC-70 D G S SOT-323/SC-70 PRODUCT SUMMARY DESCRIPTION SSM1333GU 11/26/2005 Rev.3 .01 Notes: 1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C. 2.Pulse width <300us, duty cycle <2%. 3.Mounted on FR4 board, t < 10 sec. high-side line and general load-switching circuits. The SSM1333GU is supplied in an RoHS-compliant SOT-323/SC-70 package, which is widely used for low power commercial and industrial surface mount applications.

www.SiliconStandard.com 2 of 5 SSM1333GU 11/26/2005 Rev.3.01 ELECTRICAL CHARACTERISTICS (at Tj = 25°C, unless otherwise specified) Source-Drain Diode Notes: 1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C. 2.Pulse width <300us, duty cycle <2%. Symbol Parameter Test Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -20 - - V Δ BVDSS/ ΔTj Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=-1mA - 0.01 -V/°C RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-550mA - - 600 mΩ VGS=-4.5V, ID=-500mA - - 800 mΩ VGS=-2.5V, ID=-300mA - - 1000 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -0.5 - -1.2 V gfs Forward Transconductance VDS=-5V, ID=-500mA - 1 -S IDSS Drain-Source Leakage Current VDS=-20V, VGS=0V - - -1 uA VDS=-16V ,VGS=0V, Tj=70°C - - -10 uA IGSS Gate-Source Leakage VGS=±12V - - ±100 nA Qg Total Gate Charge2 ID=-500mA - 1.7 2.7 nC Qgs Gate-Source Charge VDS=-16V - 0.3 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 0.4 - nC td(on) Turn-on Delay Time2 VDS=-10V - 5 - ns tr Rise Time ID=-500mA - 8 - ns td(off) Turn-off Delay Time RG=3.3Ω , VGS=-5V - 10- ns tf Fall Time RD=20Ω -2- ns Ciss Input Capacitance VGS=0V - 66 105.6 pF Coss Output Capacitance VDS=-10V - 25 - pF Crss Reverse Transfer Capacitance f= 1.0MHz - 20 - pF Symbol Parameter Test Conditions Min. Typ. Max. Unit VSD Forward On Voltage2 IS=-300mA, VGS=0V - - -1.2 V

www.SiliconStandard.com 3 of 5 SSM1333GU 11/26/2005 Rev.3.01 Fig 1. Typical output characteristics Fig 2. Typical output characteristics Fig 3. On-resistance vs. gate voltage Fig 4. Normalized on-resistance vs. junction temperature Fig 5. Forward characteristics of Fig 6. Gate threshold voltage vs. the reverse diode junction temperature 0.0 0.5 1.0 1.5 2.0 2.5 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =25 o C - 5.0V - 4.5V - 3.5V - 2.5V V G = - 2.0V 0.0 0.5 1.0 1.5 2.0 2.5 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) -5.0V -4.5V -3.5V -2.5V V G = - 2.0V T A = 150o C 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =-0 .5A V G = - 4.5V 0.0 0.2 0.4 0.6 0.8 1.0 -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C 0.0 0.5 1.0 1.5 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized -VGS(th) (V) 200 400 600 800 1000 1200 1400 147 1 0 -V GS , Gate-to-Source Voltage (V) RDS(ON) (mΩ ) I D =-0 .3A T A =25 o C

www.SiliconStandard.com 4 of 5 SSM1333GU 11/26/2005 Rev.3.01 Fig 7. Gate charge characteristics Fig 8. Typical capacitance characteristics Fig 9. Maximum safe operating area Fig 10. Effective transient thermal impedance Fig 11. Switching time waveform Fig 12. Gate charge waveform td(on) tr td(off)tf VDS VGS 10% 90% Q VG -4.5V QGS QGD QG Charge 01234 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D =-0.5A V DS =-16V 100 13579 1 1 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.01 0.1 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC

Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expre ss or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. www.SiliconStandard.com 5 of 5 SSM1333GU 11/26/2005 Rev.3.01 PHYSICAL DIMENSIONS PART MARKING SOT -23-3 MILLIMETERS SYMBOL MIN. MAX. A 0.89 1.45 A1 0 0.15 A2 0.70 1.30 b 0.30 0.50 c 0.08 0.25 D 2.65 3.10 E 2.10 3.00 E1 1.19 2.30 e 0.95BSC e1 1.90BSC L 0.30 0.60 L1 0.60REF Θ 0° 8° SOT-23-3 NDXX PART NUMBER CODE: ND = SSM2310GN XX = DATE/LOT CODE PACKING: Moisture sensitivity level MSL3 3000 pcs in antistatic tape on a reel packed in a moisture barrier bag (MBB). *Dimensions do not include mold protrusions. For a detailed explanation of these codes, please contact SSC directly.