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Technical content
3.5 A, 100V , RDS(ON) 220mΩ
N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente 11-May-2010 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSM0410 provide the designer with best combination of fast switching, ruggedized device design, low on resistance and cost-effectiveness. The SOT-223 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
FEATURES
Fast Switching Low On-resistance Logic Level Compatible MARKING MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATING UNIT Drain – Source Voltage V DS 100 V Gate – Source Voltage V GS ±20 V Continuous Drain Current , VGS@5V TA = 25°C ID 3.5 A TA = 70°C 2.2 A Pulsed Drain Current 1,2 I DM 14 A Total Power Dissipation P D 2.7 W Linear Derating Factor 0.02 W/°C Operating Junction & Storage Temperature Range T J, TSTG -65~150 °C THERMAL DATA Maximum Junction–Ambient R θJA 45 °C/W SOT-223 REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 6.20 6.70 G - 0.10 B 6.70 7.30 H - - C 3.30 3.70 J 0.25 0.35 D 1.42 1.90 K - - E 4.50 4.70 L 2.30 REF. F 0.60 0.82 M 2.90 3.10 Top View A M B D LK F G H J E C Gate Source Drain
N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente 11-May-2010 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) PARAMETER SYMBOL MIN TYP MAX UNIT TEST CONDITION Drain-Source Breakdown Voltage BV DSS 100 - - V V GS=0V, ID =1mA Gate Threshold Voltage V GS(TH) 1.0 - 2.5 V V DS= 10V, ID =1mA Forward Transconductance g FS - 4.0 - S V DS=10V, ID=2.5A Gate-Source Leakage Current I GSS - - ±100 nA V GS=±20V Drain-Source Leakage Current I DSS - - 10 μA V DS=100V, VGS=0V Drain-Source On Resistance R DS(ON) - - 0.22 Ω VGS=10V, ID=2.6A - - 0.28 V GS=5.0V, ID=1.7A Total Gate Charge Q g - 11.2 - nC V GS=5V VDS=80V I D=3.5A Gate-Source Charge Q gs - 4.4 - Gate-Drain (“Miller”) Charge Q gd - 3.0 - Turn-on Delay Time T d(ON) - 9 - nS VDD=30V V GS=10V I D=1A RG=6Ω, RL=30Ω Rise Time T r - 9.4 - Turn-off Delay Time T d(OFF) - 26.8 - Fall Time T f - 2.6 - Input Capacitance C ISS - 975 - pF VDS=25V VGS=0V f=1MHz Output Capacitance C OSS - 38 - Reverse Transfer Capacitance C RSS - 27 - SOURCE-DRAIN DIODE Forward On Voltage V SD - - 1.5 V V GS=0V, IS=3.5A Note: 1. Pulse width limited by Maximum junction temperature. 2. Pulse width ≦ 300 μs, Duty cycle ≦ 2% 3. Surface mounted on 1 in copper pad of FR4 board; 120°C/W when mounted on Min. copper pad.
N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente 11-May-2010 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES
N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente 11-May-2010 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES