SSM01N60SL SECOS | Alldatasheet

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Technical content

1A , 600V , R DS(ON) 8.1 Ω N-Ch Enhancement Mode Power MOSFET 01-Apr-2014 Rev. A Page 1 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SOT -223 RoHS Compliant Product A suffix of “-C” specifies halogen free

DESCRIPTION

The SSM01N60SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent R DS(on) and gate charge for most of the synchronous buck converter applications .

FEATURES

/circle6 Advanced high cell density Trench technology /circle6 Super Low Gate Charge /circle6 Excellent CdV/dt effect decline /circle6 100% EAS Guaranteed /circle6 Green Device Available ABSOLUTE MAXIMUM RATINGS (T A=25° C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V TC =25° C 1 A Continuous Drain Current TC =100° C ID 0.6 A Pulsed Drain Current IDM 4 A TC =25° C 22 W Total Power Dissipation Derate above 25° C PD

0.18 W/° C

Single Pulse Avalanche Energy 1 E AS 52 mJ Operating Junction and Storage Temperature Range TJ, T STG -55~150 ° C Thermal Resistance Rating Maximum Thermal Resistance Junction-Ambient R θJA 60 ° C / W Maximum Thermal Resistance Junction-Case R θJC 5.68 ° C / W Notes: 1. L=30mH,I AS =1.74A, V DD =110V, R G =25 Ω, Starting T J =25° C Gate Source Drain A 5.90 6.70 G - 0.18 B 6.70 7.30 H 2.00 REF. C 3.30 3.80 J 0.20 0.40 D 1.42 1.90 K 1.10 REF. E 4.45 4.75 L 2.30 REF. F 0.60 0.85 M 2.80 3.20 Top View A M B D LK F G H J E C

1A , 600V , R DS(ON) 8.1 Ω N-Ch Enhancement Mode Power MOSFET 01-Apr-2014 Rev. A Page 2 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T J = 25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage BV DSS 600 - - V V GS =0, I D = 250 µA Gate-Threshold Voltage V GS(th) 2 - 4 V V DS =V GS , I D =250 µA Gate-Source Leakage Current I GSS - - ±100 nA V GS = ±30V, V DS =0 Drain-Source Leakage Current I DSS - - 1 µA V DS =600V, V GS =0 Static Drain-Source On-Resistance R DS(ON) - 6.8 8.1 Ω V GS =10V, I D =0.5A Total Gate Charge 1.2 Q g - 3.37 - Gate-Source Charge 1.2 Q gs - 1.16 - Gate-Drain Change 1.2 Q gd - 1.04 - nC ID =1A VDS =480V VGS =10V Turn-on Delay Time 1.2 T d(on) - 6.1 - Rise Time 1.2 Tr - 11.9 - Turn-off Delay Time 1.2 T d(off) - 8.3 - Fall Time 1.2 Tf - 15.3 - nS VDD =300V ID =1A R G =25 Ω Input Capacitance C iss - 139 - Output Capacitance C oss - 23.4 - Reverse Transfer Capacitance C rss - 0.6 - pF VGS =0 VDS =25V f =1.0MHz Source-Drain Diode Diode Forward Voltage V SD - - 1.5 V I S=1A, V GS =0 Continuous Source Current I S - - 1 A Pulsed Source Current I SM - - 4 A Integral Reverse P-N Junction Diode in the MOSFET Reverse Recovery Time T rr - 190 - ns Reverse Recovery Charge Q rr - 0.53 - µC IS=1A,V GS =0, dl F/dt=100A/ µS Notes: 1. Pulse Test: Pulse width ≦300 µS, Duty cycle ≦2% 2. Essentially independent of operating temperature.

1A , 600V , R DS(ON) 8.1 Ω N-Ch Enhancement Mode Power MOSFET 01-Apr-2014 Rev. A Page 3 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES

1A , 600V , R DS(ON) 8.1 Ω N-Ch Enhancement Mode Power MOSFET 01-Apr-2014 Rev. A Page 4 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES

1A , 600V , R DS(ON) 8.1 Ω N-Ch Enhancement Mode Power MOSFET 01-Apr-2014 Rev. A Page 5 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TYPICAL TEST CURVES