SSL9971 SECOS | Alldatasheet
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- Low On-Resistance * Simple Drive Requirement The TO-263 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. such as DC/DC converters and high efficiency switching circuit. S D G Elektronische Bauelemente SSL9971 25A, 60V,RDS(ON)36m N-Channel Enhancement Mode Power Mos.FET Ω Absolute Maximum Ratings A 4.40 4.80 c2 1.25 1.45 b 0.76 1.00 b2 1.17 1.47 L4 0.00 0.30 D 8.6 9.0 c 0.36 0.5 e 2.54 REF. L3 1.50 REF. L 14.6 15.8 L1 2.29 2.79 0 8 E 9.80 10.4 L2 1.27 REF. q o o RoHS Compliant Product
Electrical Characteristics( Tj=25 C Unless otherwise specified) o Notes: Pulse width limited by safe operating area. 1. 2.Pulse width 300us, dutycycle 2%.≦≦ 1700 160 110 nC nS pF VGS=0V VDS=25V f=1.0MHz VDD=30V ID=18A VGS=10V RG=3.3 RD=1.67 Ω Ω ID=18A VDS=48V VGS= 4.5V _ _ m Ω VGS=10V, ID=18A VGS=4.5V, ID=12A _ S VDS=10V, ID=18A__ 0.05 1.0 3.0 100 V V/ Reference to 25C , ID=1mA oo C V nA uA uA VGS=0V, ID=250uA VGS= 20V± VDS=60V,VGS=0 VDS=48V,VGS=0 VDS=VGS, ID=250uA 2700 Total Gate Charge Crss Qg Qgs Qgd Td(ON) Td(Off) Tr Ciss Coss Tf Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Static Drain-Source On-Resistance Forward Transconductance Gfs RDS(ON) BVDSS BVDS/ Tj IDSS Parameter Symbol Max.Typ. Test ConditionMin. Unit Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 ) Drain-Source Leakage Current(Tj=150 ) VGS(th) IGSS o C o C Parameter Symbol Max.Typ. Test ConditionMin. Unit Forward On Voltage Reverse Recovery Time Trr _ Reverse Recovery Charge _Qrr nC nS Is=18A,VGS=0V, dl/dt=100A/us VSD __ IS=2 A, VGS=0VV1.2 Source-Drain Diode ttp://www.SeCoSGmbH.com/ A ny changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 h Elektronische Bauelemente SSL9971 25A, 60V,RDS(ON)36m N-Channel Enhancement Mode Power Mos.FET Ω
ttp://www.SeCoSGmbH.com/ A ny changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 h Elektronische Bauelemente SSL9971 25A, 60V,RDS(ON)36m N-Channel Enhancement Mode Power Mos.FET Ω Characteristics Curve Fig 6. Gate Threshold Voltage v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature
ttp://www.SeCoSGmbH.com/ A ny changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4 h Elektronische Bauelemente SSL9971 25A, 60V,RDS(ON)36m N-Channel Enhancement Mode Power Mos.FET Ω Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform