SSL6679 SECOS | Alldatasheet
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- Lower On-Resistance * Simple Drive Requirement * Fast Switching Characteristics A 4.40 4.80 c2 1.25 1.45 b 0.76 1.00 b2 1.17 1.47 L4 0.00 0.30 D 8.6 9.0 c 0.36 0.5 e 2.54 REF. L3 1.50 REF. L 14.6 15.8 L1 2.29 2.79 0 8 E 9.80 10.4 L2 1.27 REF. q o o The SSL6679 provide the designer with the best combination The TO-263 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. such as DC/DC converters and high efficiency switching circuit. RoHS Compliant Product
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 Notes: 1. 2.Pulse width 300us, dutycycle 2%.≦≦ Parameter Symbol Max.Typ. Test ConditionMin. 740 f=1.0MHz
34 S VDS=-10V, ID=-24A
Reverse Transfer Capacitance Forward Transconductance 2870 960 nC nS pF VGS=0V VDS=-25V VDD=-15V ID=-16A VGS=-10V RG=3.3 RD=0.94 Ω Ω ID=-16A VDS=-24V VGS=-4.5V mΩ VGS=-10V, ID=- 30A 4590 67Qg Qgs Qgd Td(ON) Td(Off) Tr Ciss Coss Tf RDS(ON) 0.03 .0 -3.0 100 -25 V V/ Reference to 25C , ID=-1mA oo C V nA uA uA VGS=0V, ID=-250uA VGS= 25V± VDS=-30V,VGS=0 VDS=-24V,VGS=0 VDS=VGS, ID=-250uA Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance BVDSS BVDS/ Tj IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 ) Static Drain-Source On-Resistance Drain-Source Leakage Current(Tj=150 ) VGS(th) IGSS o C o C Parameter Symbol Max.Typ. Test ConditionMin. Unit _ 15 VGS=-4.5 V, ID=- 24A_ Electrical Characteristics( Tj=25 C Unless otherwise specified) o Unit Forward On Voltage Reverse Recovery Time Trr _ 47 6=-1S A, VGS=0V.I nC nS _ dl/dt=100A/us 24-S= A,VGS=0V. Reverse Recovery Change _Qrr IVSD __ V-1.22 Source-Drain Diode Pulse width limited by safe operating area. Elektronische Bauelemente SSL6679 -75A, -30V,RDS(ON) 9m P-Channel Enhancement Mode Power Mos.FET Ω
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 Characteristics Curve Elektronische Bauelemente SSL6679 -75A, -30V,RDS(ON) 9m P-Channel Enhancement Mode Power Mos.FET Ω Fig 6. Gate Threshold Voltage v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature
12 /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4 Elektronische Bauelemente SSL6679 -75A, -30V,RDS(ON) 9m P-Channel Enhancement Mode Power Mos.FET Ω Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform