SSL4407 SECOS | Alldatasheet

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  • Lower On-Resistance * Simple Drive Requirement * Fast Switching Characteristics A 4.40 4.80 c2 1.25 1.45 b 0.76 1.00 b2 1.17 1.47 L4 0.00 0.30 D 8.6 9.0 c 0.36 0.5 e 2.54 REF. L3 1.50 REF. L 14.6 15.8 L1 2.29 2.79 0 8 E 9.80 10.4 L2 1.27 REF. q o o The SSL4407 provide the designer with the best combination The TO-263 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. such as DC/DC converters and high efficiency switching circuit. RoHS Compliant Product

http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 Notes: 1. 2.Pulse width 300us, dutycycle 2%.≦≦ Parameter Symbol Max.Typ. Test ConditionMin. 550 f=1.0MHz

36 S VDS=-10V, ID=-24A

Reverse Transfer Capacitance Forward Transconductance 100 2120 630 nC nS pF VGS=0V VDS=-25V VDD=-15 V ID=-24A VGS=-10V RG=3.3 RD=0.63 Ω Ω ID=-24A VDS=-24V VGS=-4.5V mΩ VGS=-10V, ID=- 24A 3390 60Qg Qgs Qgd Td(ON) Td(Off) Tr Ciss Coss Tf RDS(ON) 0.01 .0 -3.0 100 -25 V V/ Reference to 25C , ID=-1mA oo C V nA uA uA VGS=0V, ID=-250uA VGS= 25V± VDS=-30V,VGS=0 VDS=-24V,VGS=0 VDS=VGS, ID=-250uA Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance BVDSS BVDS/ Tj IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 ) Static Drain-Source On-Resistance Drain-Source Leakage Current(Tj=150 ) VGS(th) IGSS o C o C Parameter Symbol Max.Typ. Test ConditionMin. Unit _ 23 VGS=-4.5 V, ID=- 16A_ Electrical Characteristics( Tj=25 C Unless otherwise specified) o Unit Forward On Voltage Reverse Recovery Time Trr _ 39 =-S A, VGS=0V. = A,VGS=0V. I Reverse Recovery Change _Qrr nC nS I VSD __ V-1.22 _ dl/dt=100A/us Source-Drain Diode Pulse width limited by safe operating area. Elektronische Bauelemente SSL4407 -50A, -30V,RDS(ON) 14m P-Channel Enhancement Mode Power Mos.FET Ω

http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 Characteristics Curve Fig 6. Gate Threshold Voltage v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Elektronische Bauelemente SSL4407 -50A, -30V,RDS(ON) 14m P-Channel Enhancement Mode Power Mos.FET Ω

12 šššš/W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4 Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Elektronische Bauelemente SSL4407 -50A, -30V,RDS(ON) 14m P-Channel Enhancement Mode Power Mos.FET Ω