SSL40N03 SECOS | Alldatasheet
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- Fast Switching * Simple Drive Requirement The TO-263 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. such as DC/DC converters and high efficiency switching circuit. S D G Elektronische Bauelemente SSL40N03 40A, 30V,RDS(ON)17 m N-Channel Enhancement Mode Power Mos.FET Ω Absolute Maximum Ratings A 4.40 4.80 c2 1.25 1.45 b 0.76 1.00 b2 1.17 1.47 L4 0.00 0.30 D 8.6 9.0 c 0.36 0.5 e 2.54 REF. L3 1.50 REF. L 14.6 15.8 L1 2.29 2.79 0 8 E 9.80 10.4 L2 1.27 REF. q o o * Dynamic dv/dt Rating * Repetitive Avalanche Rated RoHS Compliant Product
Electrical Characteristics( Tj=25 C Unless otherwise specified) o Notes: Pulse width limited by safe operating area. 1. 2.Pulse width 300us, dutycycle 2%.≦≦ 7.2 22.5 800 380 133 nC nS pF VGS=0V VDS=25V f=1.0MHz VDD=15V ID=20A VGS=10V RG=3.3 RD=0.75 Ω Ω ID=20A VDS=24V VGS= 4.5V _ _ m Ω VGS=10V, ID=20A VGS=4.5V, ID=16A _ S VDS=10V, ID=20A__ 0.037 1.0 3.0 100 250 V V/ Reference to 25C , ID=1mA oo C V nA uA uA VGS=0V, ID=250uA VGS= 20V± VDS=30V,VGS=0 VDS=24V,VGS=0 VDS=VGS, ID=250uA Total Gate Charge Crss Qg Qgs Qgd Td(ON) Td(Off) Tr Ciss Coss Tf Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Static Drain-Source On-Resistance Forward Transconductance Gfs RDS(ON) BVDSS BVDS/ Tj IDSS Parameter Symbol Max.Typ. Test ConditionMin. Unit Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 ) Drain-Source Leakage Current(Tj=150 ) VGS(th) IGSS o C o C ttp://www.SeCoSGmbH.com/ A ny changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 5 h Elektronische Bauelemente SSL40N03 40A, 30V,RDS(ON)17 m N-Channel Enhancement Mode Power Mos.FET Ω Source-Drain Diode Parameter Symbol Max.Typ. Test ConditionMin. Unit Forward On Voltage Continuous Source Current(Body Diode) IS _ 169 Pulsed Source Current(Body Diode) _ISM A A VD=VG=0V,VS=1. V VSD __ IS= A, VGS=0V.Tj=25CV1.
ttp://www.SeCoSGmbH.com/ A ny changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 5 h Elektronische Bauelemente SSL40N03 40A, 30V,RDS(ON)17 m N-Channel Enhancement Mode Power Mos.FET Ω Characteristics Curve Fig 5. Maximum Drain Current v.s. Case Temperature Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Type Power Dissipation
40A, 30V,RDS(ON)17 m N-Channel Enhancement Mode Power Mos.FET Ω ttp://www.SeCoSGmbH.com/ A ny changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 5 h Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristics of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature
40A, 30V,RDS(ON)17 m N-Channel Enhancement Mode Power Mos.FET Ω ttp://www.SeCoSGmbH.com/ A ny changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 5 of 5 h Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform