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Technical content
100mA, 30V N-Channel MOSFET http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 25-Apr-2013 Rev. B Page 1 of 2 Top View A L C B D G H JF K E 1 2
2 SOURCE
3 DRAIN
*Gate Protection Diode RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free
DESCRIPTION
Low on-resistance Fast switching speed Easily designed drive circuits Easy to parallel
FEATURES
Simple drive requirement Small package outline MARKING MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain – Source Voltage V DS 30 V Gate – Source Voltage V GS ±20 V Continuous Drain Current I D 100 mA Power Dissipation 1 P D 200 mW Maximum Junction to Ambient R θJA 625 °C / W Operating Junction & Storage Temperature Range T J, TSTG 150, -55~150 °C
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Off Characteristics Drain-Source Breakdown Voltage V (BR)DSS 30 - - V V GS=0, ID =10μA Gate-Threshold Voltage V GS(TH) 0.8 - 1.5 V V DS=3V, ID =100μA Gate-Source Leakage Current I GSS - - ±500 nA V GS=±20V, VDS=0 Drain-Source Leakage Current I DSS - - 0.2 μA V DS=30V, VGS=0 - - 8 V GS=4V, ID=10mA Static Drain-Source On-Resistance R DS(ON) - - 13 Ω VGS=2.5V, ID=1mA Forward Transconductance g FS 20 - - ms V DS=3V, ID=10mA Dynamic Characteristics1 Input Capacitance C ISS - 13 - Output Capacitance C OSS - 9 - Reverse Transfer Capacitance C RSS - 4 - pF VDS=5V VGS=0 f=1MHz Switching Characteristics1 Turn-on Delay Time T d(ON) - 15 - Rise Time T R - 35 - Turn-off Delay Time T d(OFF) - 80 - Fall Time T R - 80 - nS VGS=5V, VDD=5V ID=10mA RL=500Ω RG=10Ω Note: 1. These parameters have no way to verify. SOT-323 A 1.80 2.20 G 0.100 REF. B 1.80 2.45 H 0.525 REF. C 1.15 1.35 J 0.08 0.25 D 0.80 1.10 K - - E 1.20 1.40 L 0.650 TYP. F 0.20 0.40 KN
100mA, 30V N-Channel MOSFET http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 25-Apr-2013 Rev. B Page 2 of 2 CHARACTERISTIC CURVES