SSK3018K SECOS | Alldatasheet
Document overview
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Technical content
100mA, 30V N-Channel MOSFET 10-Jan-2010 Rev. A Page 1 of 3 Top View A L C B D G H JF K E 1 2
2 SOURCE
3 DRAIN
*Gate Protection Diode RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free
DESCRIPTION
/circle6 Low on-resistance /circle6 Fast switching speed /circle6 Low voltage drive (2.5V) makes this device ideal for portable equipment /circle6 Easily designed drive circuits /circle6 Easy to parallel
FEATURES
/circle6 Simple drive requirement /circle6 Small package outline DEVICE MARKING: KN MAXIMUM RATINGS (T A = 25° C unless otherwise specified) PARAMETER SYMBOL RATING UNIT Drain – Source Voltage VDS 30 V Gate – Source Voltage VGS ±20 V Continuous Drain Current ID 100 mA Pulsed Drain Current (tp ≦10 µS) I DM 400 mA Power Dissipation * PD 200 mW Operating Junction & Storage Temperature Range T J, T STG 150, -55~150 ° C Note: With each pin mounted on the recommended lands.
ELECTRICAL CHARACTERISTICS
(T A = 25° C unless otherwise specified) PARAMETER SYMBOL MIN TYP MAX UNIT TEST CONDITION STATIC CARACTERISTICS Drain-Source Breakdown Voltage V (BR)DSS 30 - - V V GS =0V, I D =10 µA Gate-Threshold Voltage V GS(TH) 0.8 - 1.5 V V DS = 3V, ID =100µA Gate-Source Leakage Current I GSS - - ±1.0 µA V GS =±20V Drain-Source Leakage Current I DSS - - 1.0 µA V DS =30V, V GS =0V - 5.0 8.0 V GS =4V, I D =10mA Static Drain-Source On-Resistance R DS(ON) - 7.0 13 Ω VGS =2.5V, I D =1mA Forward Transconductance g FS 20 - - ms V DS =3V, I D =10mA DYNAMIC CHARACTERISTICS Input Capacitance C ISS - 13 - Output Capacitance C OSS - 9 - Reverse Transfer Capacitance C RSS - 4 - pF VDS =5V VGS =0V f=1MHz SWITCHING CHARACTERISTICS Turn-on Delay Time T d(ON) - 15 - Rise Time T R - 35 - Turn-off Delay Time T d(OFF) - 80 - Fall Time T R - 80 - nS VGS =5V I D =10mA R L=500Ω R G =10 Ω SOT-323 A 1.80 2.20 G 0.100 REF. B 1.80 2.45 H 0.525 REF. C 1.15 1.35 J 0.08 0.25 D 0.80 1.10 K - - E 1.20 1.40 L 0.650 TYP. F 0.20 0.40
100mA, 30V N-Channel MOSFET 10-Jan-2010 Rev. A Page 2 of 3 CHARACTERISTIC CURVES
100mA, 30V N-Channel MOSFET 10-Jan-2010 Rev. A Page 3 of 3 CHARACTERISTIC CURVES