SSI3439J

SSI3439J SECOS | Alldatasheet

Document overview

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Technical content

/glyph1197-Ch: 0.75A, 20V , R DS(O/glyph1197) 380 m/uni2126 P-Ch: -0.66A, -20V , R DS(O/glyph1197) 520 m/uni2126 /glyph1197 & P-Ch Enhancement Mode Power MOSFET 06-Apr-2017 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free

DESCRIPTION

SSI3439J is N and P Channel enhancement MOS Field Effect Transistor. It uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for the use in DC-DC conversion, load switch and level shift.

FEATURES

/circle6 Surface mount package /circle6 Low R DS(ON) /circle6 ESD-protecting gate

APPLICATIONS

/circle6 Load/power switching /circle6 Interfacing switching /circle6 Battery management for Ultra small portable electronics MARKING

PACKAGE INFORMATION

(T A=25°C unless otherwise specified) Part Number Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage V DS 20 -20 V Typical Gate-Source Voltage V GS ±12 V Continuous Drain Current 1 I D 0.75 -0.66 A Pulsed Drain Current@ tp=10µs I DM 1.8 -1.2 A Thermal Resistance from Junction to Ambient 1 R θJA 833 °C/ W Lead Temperature for Soldering Purposes @1/8’’ from case for 10s T L 260 °C Junction and Storage Temperature Range TJ, T STG 150, -55~150 °C SOT-563 49K EF J B C D G A H A 1.50 1.70 F 0.09 0.16 B 1.50 1.70 G 0.45 0.55 C 0.525 0.60 H 0.17 0.27 D 1.10 1.30 J 0.10 0.30 E - 0.05

/glyph1197-Ch: 0.75A, 20V , R DS(O/glyph1197) 380 m/uni2126 P-Ch: -0.66A, -20V , R DS(O/glyph1197) 520 m/uni2126 /glyph1197 & P-Ch Enhancement Mode Power MOSFET 06-Apr-2017 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS

(T A=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Static Characteristics N-Ch 20 - - V GS =0, I D =250µA Drain-Source Breakdown Voltage P-Ch V(BR)DSS -20 - - V VGS =0, I D = -250µA N-Ch - - 1 V DS =20V, V GS =0 Zero Gate Voltage Drain Current P-Ch IDSS - - -1 uA VDS = -20V, V GS =0 N-Ch - - ±20 Gate-Source Leakage Current P-Ch IGSS - - ±20 µA V DS =0V, V GS =±10V N-Ch 0.35 - 1.1 V DS =VGS, ID =250µA Gate-Threshold Voltage 2 P-Ch VGS(TH) -0.35 - -1.1 V VDS =VGS, ID = -250µA N-Ch - - 380 V GS =4.5V, I D =0.65A P-Ch - - 520 V GS = -4.5V, I D = -1A N-Ch - - 450 V GS =2.5V, I D =0.55A P-Ch - - 700 V GS = -2.5V, I D = -0.8A N-Ch - - 800 V GS =1.8V, I D =0.45A Drain-Source On Resistance 2 P-Ch RDS(ON) - 950 - mΩ VGS = -1.8V, ID = -0.5A N-Ch - 1.6 - V DS =10V, ID =0.8A Forward Transfer conductance 2 P-Ch gFS - 1.2 - S VDS = -10V, ID = -0.54A N-Ch - - 1.2 I S=0.15A, VGS =0 Diode Forward Voltage P-Ch VSD - - -1.2 V IS= -0.5A, VGS =0 Dynamic Characteristics N-Ch - 79 - Input Capacitance P-Ch CISS - 113 - N-Ch - 13 - Output Capacitance P-Ch COSS - 15 - N-Ch - 9 - Reverse Transfer Capacitance P-Ch CRSS - 9 - pF N-Ch: VDS =16V, VGS =0, f=1MHz P-Ch: V DS = -16V, VGS =0, f=1MHz Switching Characteristics 3 N-Ch - 6.7 - Turn-on Delay Time P-Ch Td(ON) - 9 - N-Ch - 4.8 - Rise Time P-Ch Tr - 5.8 - N-Ch - 17.3 - Turn-off Delay Time P-Ch Td(OFF) - 32.7 - N-Ch - 7.4 - Fall Time P-Ch Tf - 20.3 - nS N-Ch: V DS =10V, V GS =4.5V ID =0.5A, RGEN =10Ω P-Ch: V DS = -10V, V GS = -4.5V ID = -0.2A, RGEN =10Ω Notes: 1. The surface of the device is mounted on a FR4 board using recommended minimum pad size. 2. Pulse Test: Pulse width=300µs, duty cycle ≦2%. 3. Switching characteristics are independent from the operating junction temperature.

/glyph1197-Ch: 0.75A, 20V , R DS(O/glyph1197) 380 m/uni2126 P-Ch: -0.66A, -20V , R DS(O/glyph1197) 520 m/uni2126 /glyph1197 & P-Ch Enhancement Mode Power MOSFET 06-Apr-2017 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES (N-Channel)

/glyph1197-Ch: 0.75A, 20V , R DS(O/glyph1197) 380 m/uni2126 P-Ch: -0.66A, -20V , R DS(O/glyph1197) 520 m/uni2126 /glyph1197 & P-Ch Enhancement Mode Power MOSFET 06-Apr-2017 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES (P-Channel)