SSI3139J SECOS | Alldatasheet
Document overview
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Technical content
-0.66A, -20V , R DS(ON) 520 m /uni2126 Dual P-Ch Enhancement Mode Power MOSFET 15-Apr-2016 Rev. A Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SSI3139J is a Dual P Channel MOS which has been designed to be used as a Power Trench process to optimize R DS(ON) .
FEATURES
/circle6 High side switching /circle6 Low on-resistance /circle6 Low threshold /circle6 Fast switching speed
APPLICATIONS
/circle6 Load/power switching /circle6 Power supply converter circuits /circle6 Battery-operated system MARKING
PACKAGE INFORMATION
(T A=25° C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage V DS -20 V Typical Gate-Source Voltage V GS ±12 V Continuous Drain Current I D -0.66 A Pulsed Drain Current 1 I DM -2.64 A Power Dissipation 2 PD 150 mW Thermal Resistance from Junction to Ambient R θJA 833 ° C/ W Junction and Storage Temperature Range T J, T STG 150, -55~150 ° C SOT-563 39K EF J B C D G A H A 1.50 1.70 F 0.09 0.16 B 1.50 1.70 G 0.45 0.55 C 0.525 0.60 H 0.17 0.27 D 1.10 1.30 J 0.10 0.30 E - 0.05
-0.66A, -20V , R DS(ON) 520 m /uni2126 Dual P-Ch Enhancement Mode Power MOSFET 15-Apr-2016 Rev. A Page 2 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS
(T A=25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition On/Off States Drain-Source Breakdown Voltage V(BR)DSS -20 - - V V GS =0, I D = -250 µA Zero Gate Voltage Drain Current IDSS - - -1 µA V DS = -20V, V GS =0 Gate-Source Leakage Current I GSS - - ±20 µA V DS =0V, V GS = ±10V Gate-Threshold Voltage 3 V GS(th) -0.35 - -1.1 V V DS =V GS, ID = -250 µA - - 700 V GS = -2.5V, I D = -0.8A Drain-Source On Resistance 3 R DS(ON) - 950 - m Ω VGS = -1.8V, I D = -0.5A Forward Transconductance g FS - 0.8 - S V DS = -10V, ID = -0.54A Dynamic Characteristics Input Capacitance C iss - 170 - Output Capacitance C oss - 25 - Reverse Transfer Capacitance C rss - 15 - pF VDS = -16V VGS =0 f=1MHz Switching Characteristics Turn-on Delay Time T d(on) - 9 - Rise Time T r - 5.8 - Turn-off Delay Time T d(off) - 32.7 - Fall Time T f - 20.3 - nS VDS = -10V VGS = -4.5V R G =10 Ω ID = -0.2A Drain-Source Diode Characteristics Diode Forward Voltage V SD - - -1.2 V I S= -0.5A, VGS =0 Notes: 1. Repetitive Rating: The pulse width is limited by the maximum junction temperature. 2. This test is performed without heat sink at TA=25° C. 3. Pulse Test: Pulse width ≦300 µs, duty cycle ≦0.5%.
-0.66A, -20V , R DS(ON) 520 m /uni2126 Dual P-Ch Enhancement Mode Power MOSFET 15-Apr-2016 Rev. A Page 3 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES