SSH6N70A

SSH6N70A FAIRCHILD | Alldatasheet

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Advanced Power MOSFET SSH6N70A FEATURES BVoes = 700V HM Avalanche Rugged Technology R - 180 HM Rugged Gate Oxide Technology DS(on) “ee HM Lower Input Capacitance Ip = 6A @ improved Gate Charge WM Extended Safe Operating Area M@ Lower Leakage Current : 25 pA (Max) @ Vy. = 700V TO-3P -_ MH Low Rosier 2 1.552 2 (Typ.) => " eS 1.Gate 2. Drain 3. Source Absolute Maximum Ratings | Symbol | Characteristic | Sale Units ee [Continuous Drain Current (Te=100'c) | 38 | tw | Drain CurrentPulsed = OT [Vos _[Gateto-Source Voltage «| SSSCiOSCSC~*«di;#=C ~CS [Ess [Single Pulsed Avalanche Energy @ | _s82_———=«dY_smd a | Exe _—| Repetitive Avalanche Energy ss @ | tm [dist [Peak Diode Recovery dvist _@| 25 —~*«d| Vins | Total Power Dissipation (T.=25 °C) W pre oem |e |e Operating Junction and Maximum Lead Temp. for Soldering e | |ses tom ese tr aseenes | Thermal Resistance | Symbol | __—Characteristic | Typ. | Max. Units | | Rec | unctionto-Case | | 8D oe ££ Res FAIRCHILD ee. O1089 Partéd Gerd coececte: Corporatoe

Electrical Characteristics (T,=25'c unless otherwise specified) [ Symbol | Characteristic [Min.|Typ.[Max [Units] Test Condition | |_8Vess [Drain-Source Breakdown Vottage |700| — | — | v | Vos=0V.lp=260.4 | | 8V/aT, [Breakdown Voltage Temp. Coeft.| ~ [o7e| — [we |i=250,A See Fig7 | | Voss [Gate Threshold Voitage [20 ~ [4.0] v | Vosr5V.l5=250KA | lowe [Gate-Source Leakage. Forward | - | - [roo] |, [GGate-source Leakage. Reverse | —~ | — |-100| Stas ee Static Drain-Source Vee=10V.n=3A fea On-State Resistance vediihhhtad |_o [Forward Transconductance | = [4.12] ~ | [Voe=50V.5=3A OI [Cu [input Capactance | — | 620 [1200 — [Gum [Output Capacitance | = | 100 [115] pr | Yow Vowr2ovs=tMis [Cam [Reverse Transfer Capactance | — | 45 | 56 | i [toy [TumOn Dey Tme | - | 18 | 45 | Voo=350V,,=6A, | & [RseTme = oa fe] ° | taen [TemOF Delay Tne | — | 70 | 100] Se 13 a (ce sFa8 @@ | OQ. [GateSource Chae | = [8.3 | ~ | nc | 18a [Ou [Gate Drainc iter) Chae | - [201] -] | SeeFig6 4 Fig 120 Source-Drain Diode Ratings and Characteristics [Symbot | __ Characters |Win] yp. [ax [Unis] Test Condiion | [ts _[Contnoous Source Curent | - | — | 6 | , | integralreverse pniode [tw | Pulses-Source Curent @ |= | -[26| “ |intemosret |_ Yeo [Diode Forward Voltage @ | ~ | ~ [1.4 | V [1225 °C.ly-8AVos=0V | [te [Reverse Recovery Tme | — [40] ~ [os | 725 40a [ a, [Reverse Recovery Crave [= [#05] = [ot ]aptrsonays Notes ; @ Repetitve Rating : Pulse Wicth Limited by Maximum Junction Temperature @ L=30MH, 1,,"6A, Vep=SOV, R272, Starting T,=25 °C O lypS 6A, Dt S140A/ us, Ven <BVoge. Staring T,-25 °C @ Pulse Test : Pulse Width = 250 us, Duty Cycle <2% © Essentially Independent of Operating Temperature EE FAIRCHILD bp rere aroo

Fig 1. Output Characteristice Fig 2. Transfer Characteristics ~ Si ee ~* = 7m Hit — 4 ott eed a at e/a at 2 = Ht ee ail aia H 7 fa a a St oars es ESSE an as See oe —— Vig » DendrrSouros Voltage [¥) Vig + Gibrdaune Voltage 1] Fig 3. On-Resistance vs. Drain Current z Fig 4. Source-Drain Diode Forward Voltage 5 i i i fis SSS PSS SES OE eS ESSE: | a eh / Ae « posmopooop pos pASo poo g;° T T g fooOCPoociz yor =e | | { a SSI SIREN 4 Ginn & REE Simin gy i i i By i i i i #s i ; ; A SSS Se SS 5" a rn“... 2 meni sfmaaper era g T | | a ee oy hae et a he . ! ! emergent ee eee: Se oe eee *s 5 5 = » we us rr) Pry Fey Ty» Cewin Camere Vp + SucarDrain Voltage (V] Fig 5. Capacitance vs. Drain-Source Voltage Fig 6. Gate Charge vs. Gate-Source Voltage TTT) rorae T] oe rot TT 4 - Loi iin rr § 1 SPP YYZ | it i iiiii iii i i i i i | ; Perot off meee bMenev a oe es eo ee ee as ee ot ae H H H H H , ——| 2 | Ont: 608 ¥ ¥ ° rE Vig + Drnlr couse Voltage (V] Q- Real Gite Qa tn EE FAIRCHILD Es SEMICONDUCTOR™

& Fig 7. Breakdown Voltage ve. Temperature Fig 8. On-Resistance ve. Temperature BE tetas SS Be a ee BS TSE Bo appepoppope eta - ni ed rT or Ty. dection Sapecatuee [ Ty, duction Tepsemtize [ TC § sid et Ht 4 in T T ron Fil silo eee ahead a ae oo ce = : ees SSIS: SIF IG i i i i =— 7 &$°mt SSS i H H H te shes sass | | | | uw 5 7} rr) S ~ = co) 3 cS) Vip + CrmderSouece Vettage (V7) 7, Cue Depa | T Fig 11. Thermal Response ene 1 shale

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oz EHR} HHH EES BE 3... ul imta SRS Se $600: Ra eR aaa EEA EBT we uw uw w uw Pt 10 t, , Square Wave Pulse Duration [sec] FAIRCHILD SEMICONDUCTOR™

Fig 12. Gate Charge Test Circutt & Waveform * Cument Regulator * -—] v (| Same Type * xe. as DUT Q “TTT ta " Vos ° i DUT om TL — T R, R, Cusrent Sampling (Iq) Current Sampling (Ip) Charge Rewstor Resistor Fig 13. Resistive Switching Test Circuit & Waveforms Vv. ' ‘ea Vee Va Voo (05 108 Voy) Ry DUT Va 10V Fed ES te tar Fig 14. Unciamped Inductive Switching Test Circuit & Waveforms BV, 1 pes Vn u ay he Save Vary t, t obtain 6°, BV pgs raquired peak 1, \\- ly (EA) 4: ts. DUT Yoo Vos(t) wOry Es FAIRCHILD es SEMICONDUCTOR™

Fig 15. Peak Diode Recovery dvidt Test Circuit & Waveforms DuT | (Mf) v. Is L Vos Dover_| Same T) ; (4) “sear es Ls Vas + dwide controlled by Ry +I, controlled by Duty Factor D y, Gate Pulse Width ne >= “Gate Pulse Poriod lv (Driver ) Ty Body Diods Forward Current (DUT) dil@e Tana Body Diods Reverse Current Vos (DUT) Body Dieds Recovery duidt vy Vop Body Diode Forward Voltege Drop Es FAIRCHILD Ee SEMICONDUCTOR™

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