SSH50N10_15 SECOS | Alldatasheet

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Technical content

54 A, 100 V , R DS(ON) 22 m ΩΩ ΩΩ

N-Channel Enhancement Mode Power MOSFET 19-Jun-2014 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen free

DESCRIPTION

The SSH50N10 uses advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device. The through-hole version is available for low-profile applications and suited for low voltage applications such as DC/DC converters.

FEATURES

/circle6 High Density Cell Design for Ultra Low On-Resistance /circle6 High power and Current handling capability /circle6 Excellent CdV/dt effect decline /circle6 100% EAS and 100% Rg Guaranteed /circle6 Green Device Available PACKAGE CODE ABSOLUTE MAXIMUM RATINGS Parameter Symbol Ratings Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V TC =25° C 54 A Continuous Drain Current, V GS @10V 1 TC =100° C ID 38 A Pulsed Drain Current 2 IDM 120 A TC =25° C 104 W Total Power Dissipation 4 TA=25° C PD 3.13 W Single Pulse Avalanche Energy 3 EAS 98 mJ Single Pulse Avalanche Current IAS 41 A Operating Junction and Storage Temperature Range TJ, T STG -55 ~ +150 ° C Thermal Resistance Ratings Thermal Resistance Junction-case 1 Max. R θJC 1.2 ° C/W Thermal Resistance Junction-ambient(PCB mount) 1 Max. R θJA 40 ° C/W G S D N-Channel S 50N10 /boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen /box4/box4 /box4/box4 = Marking G D D TO-220 AM P J K LL G F B N D E O CH A 14.22 16.51 J 0.7 1.78 B 9.65 10.67 K 0.38 1.02 C 12.50 14.75 L 2.39 2.69 D 3.56 4.90 M 2.50 3.43 E 0.51 1.45 N 3.10 4.09 F 2.03 2.92 O 8.38 9.65 G 0.31 0.76 P 0.89 1.47 H 3.5 4.5

N-Channel Enhancement Mode Power MOSFET 19-Jun-2014 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T J= 25 °C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test condition Drain-Source Breakdown Voltage BV DSS 100 - - V V GS =0, I D =250uA Gate Threshold Voltage V GS(th) 2.5 - 4.5 V V DS =V GS , I D =250uA Forward Transconductance g fs - 27 - S V DS =5V, I D =30A Gate-Source Leakage Current I GSS - - ±100 nA V GS = ±20V TJ=25℃ - - 1 µA Drain-Source Leakage Curre nt TJ=55℃ IDSS - - 5 µA VDS =80V, V GS =0 - 18 22 V GS =10V, I D =30A Static Drain-Source On-Resistance 2 R DS(ON) - 36 40 m Ω VGS =7V, I D =15A Gate Resistance R g - 1.9 3.8 Ω V DS =0V, V GS =0, f=1MHz Total Gate Charge Q g - 27.6 - Gate-Source Charge Q gs - 11.4 - Gate-Drain (“Miller”) Change Q gd - 7.9 - nC ID =30A VDS =80V VGS =10V Turn-on Delay Time T d(on) - 15.6 - Rise Time Tr - 17.2 - Turn-off Delay Time T d(off) - 16.8 - Fall Time Tf - 9.2 - ns VDS =50V ID =30A VGS =10V R G =3.3 Ω Input Capacitance C iss - 1890 - Output Capacitance C oss - 268 - Reverse Transfer Capacitance C rss - 67 - pF VGS =0V VDS =15V f=1.0MHz Guaranteed Avalanche Characteristics Single Pulse Avalanche Energy 5 EAS 53 - - mJ V DD = 25V, L=0.1mH, I AS =30A Source-Drain Diode Forward On Voltage 2 V SD - - 1.2 V I S=1A, V GS =0V Continuous Source Current 1,6 I S - - 40 A V D = V G =0V, Force Current Diode Forward Voltage 2 V SD - - 1.2 V V GS =0V, I S=1A, TJ=25° C Reverse Recovery Time T rr - 34 - Ns Reverse Recovery Charge Q rr - 47 - nC IF=30A, Tj=25° C dI/dt=100A/ µs Notes: 1. The data tested by surface mounted on a inch 2 FR-4 board with 2OZ copper. 2. The data tested by pulse width 300≦ us, duty cycle 2%.≦ 4. The power dissipation is limited by 150° C junction temperature. 5. The Min. value is 100% EAS tested guarantee. 6. The data is theoretically the same as ID and IDM, In real applications, should by limited by total power dissipation.

N-Channel Enhancement Mode Power MOSFET 19-Jun-2014 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTICS CURVE

N-Channel Enhancement Mode Power MOSFET 19-Jun-2014 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE