SSG8N10_15 SECOS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

8A , 100V , R DS(ON) 48mΩ N-Ch Enhancement Mode Power MOSFET 25-Apr-2013 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SOP -8 8N10SC /box4/box4/box4/box4 /box4/box4/box4/box4 /box4/box4/box4/box4 /box4/box4/box4/box4 A H B M D C J K F L E N G RoHS Compliant Product A suffix of “-C” specifies halogen free

DESCRIPTION

The SSG8N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent R DS(on) and gate charge for most of the synchronous buck converter applications .

FEATURES

/circle6 Advanced high cell density Trench technology /circle6 Super Low Gate Charge /circle6 Excellent CdV/dt effect decline /circle6 100% EAS Guaranteed /circle6 Green Device Available MARKING

PACKAGE INFORMATION

(T A=25° C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V TA=25° C 8 A Continuous Drain Current 1 TA=70° C ID 6.5 A Pulsed Drain Current 2 IDM 25 A Total Power Dissipation @ T A=25° C 4 P D 1.5 W Single Pulse Avalanche Energy 3 E AS 26.6 mJ Single Pulse Avalanche Current I AS 20 A Operating Junction and Storage Temperature Range TJ, T STG -55~150 ° C Thermal Resistance Rating Maximum Thermal Resistance Junction-Ambient 1 R θJA 85 ° C / W Date Code A 5.80 6.20 H 0.35 0.49 B 4.80 5.00 J 0.375 REF. C 3.80 4.00 K 45 ° D 0 ° 8 ° L 1.35 1.75 E 0.40 0.90 M 0.10 0.25 F 0.19 0.25 N 0.25 REF. G 1.27 TYP. G S S S D D D D

8A , 100V , R DS(ON) 48mΩ N-Ch Enhancement Mode Power MOSFET 25-Apr-2013 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T J=25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage BV DSS 100 - - V V GS =0, I D = 250 µA Gate-Threshold Voltage V GS(th) 1 - 2.5 V V DS =V GS , I D =250 µA Gate-Source Leakage Current I GSS - - ±100 nA V GS = ±20V TJ=25° C - - 1 V DS =80V, V GS =0 Drain-Source Leakage Current TJ=55° C IDSS - - 10 µA VDS =80V, V GS =0 - - 48 V GS =10V, I D =8A Static Drain-Source On-Resistance 2 R DS(ON) - - 50 m Ω VGS =4.5V, I D =4A Total Gate Charge 2 Q g - 60 - Gate-Source Charge Q gs - 9.2 - Gate-Drain (“Miller”) Change Q gd - 9.9 - nC ID =3A VDS =80V VGS =10V Turn-on Delay Time 2 T d(on) - 10.8 - Rise Time Tr - 27 - Turn-off Delay Time T d(off) - 56 - Fall Time Tf - 24 - nS VDS =50V ID =3A VGS =10V R L=3.3 Ω Input Capacitance C iss - 3848 - Output Capacitance C oss - 137 - Reverse Transfer Capacitance C rss - 82 - pF VGS =0 VDS =15V f =1.0MHz Guaranteed Avalanche Characteristics Single Pulse Avalanche Energy 5 EAS 6 - - mJ V DD =25V, L=0.1mH, I AS =10A Source-Drain Diode Diode Forward Voltage 2 V SD - - 1.2 V I S=1A, V GS =0, T J=25° C Continuous Source Current 1,6 I S - - 8 A Pulsed Source Current 2,6 I SM - - 25 A VD =V G =0, Force Current Reverse Recovery Time T rr - 25 - nS Reverse Recovery Charge Q rr - 29 - nC IF=7A, dI/dt=100A/µs , TJ=25° C Notes: 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2 OZ copper. 125 ℃/W when mounted on Min. copper pad. 2. The data tested by pulsed , pulse width ≦ 300 µs , duty cycle ≦ 2% 3. The EAS data shows Max. rating . The test condition is V DD =25V,V GS =10V,L=0.1mH,I AS =20A 4. The power dissipation is limited by 150° C, junction temperature 5. The Min. value is 100% EAS tested guarantee. 6. The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.

8A , 100V , R DS(ON) 48mΩ N-Ch Enhancement Mode Power MOSFET 25-Apr-2013 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES

8A , 100V , R DS(ON) 48mΩ N-Ch Enhancement Mode Power MOSFET 25-Apr-2013 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES