SSG7328J SECOS | Alldatasheet
Document overview
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Technical content
-8 A, -30 V , R DS(ON) 21 m ΩΩ ΩΩ Dual-P Enhancement Mode Power MOSFET 10-Feb-2017 Rev. B Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A H B M D C J K F L E N G RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSG7328J uses advanced trench technology to provide excellent on-resistance, low gate charge and operation with gate voltages as low as 2.5V. The device is suitable for use as a load switch or in PWM applications. It may be used in a common drain arrangement to a bidirectional blocking switch.
FEATURES
/circle6 Simple Drive Requirement /circle6 Lower On-resistance /circle6 Low Gate Charge
PACKAGE INFORMATION
(TA = 25 °C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID -8 A Pulsed Drain Current 1 IDM -32 A Power Dissipation 2 PD 1.4 W Operating Junction & Storage Temperature Range T J, TSTG 150, -55 ~ 150 ° C Thermal Resistance Ratings Thermal Resistance Junction-ambient 2 R θJA 89 ° C / W Package MPQ Leader Size SOP-8 4K 13’’ SOP-8 A 5.80 6. 20 H 0.35 0.4 9 B 4.80 5.0 0 J 0. 375 REF. C 3.80 4.00 K 45 ° D 0° 8° L 1.35 1. 75 E 0.40 0.90 M 0.10 0.25 F 0. 19 0. 25 N 0.25 REF. G 1.27 TYP.
-8 A, -30 V , R DS(ON) 21 m ΩΩ ΩΩ Dual-P Enhancement Mode Power MOSFET 10-Feb-2017 Rev. B Page 2 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS
(T J = 25 °C unless otherwise specified) Parameter Symbol Min Typ Max Unit Test condition Drain-Source Breakdown Voltage BV DSS -30 - - V V GS =0V, I D = -250 µA Gate Threshold Voltage V GS(th) -1 - -2.5 V V DS =V GS , ID = -250 µA Forward Transconductance g fs 12 - - S V DS = -10V, I D = -8A Gate-Source Leakage Current I GSS - - ±100 nA V DS = 0V,VGS = ±20V Zero Gate Voltage Drain Current I DSS - - -15 µA V DS = -24V, V GS =0V - - 21 V GS = -10V, I D = -8A Static Drain-Source On-Resistance 3 R DS(ON) - - 32 m Ω VGS = -4.5V, I D = -6.8A Dynamic Characteristics 4 Total Gate Charge Q g - 78 - Gate-Source Chagre Q gs - 9.8 - Gate-Drain (“Miller”) Change Q gd - 8.3 - nC VDS = -15V, ID = -8A, VGS = -10V Turn-on Delay Time T d(ON) - 20 - Rise Time T r - 23 - Turn-off Delay Time T d(OFF) - 297 - Fall Time T f - 147 - nS VDD = -15V, VGS = -10V R D =15 Ω, ID = -1A, R G =6 Ω Input Capacitance C ISS - 2675 - Output Capacitance C OSS - 409 - Reverse Transfer Capacitance C RSS - 262 - pF VDS = -25V VGS =0V f=1.0MHz Source-Drain Diode Diode Forward Voltage 3 V SD - - -1.2 V I S= -2A, V GS =0V Notes ： 1. Repetitive rating: Pulse width limited by junction temperature. 2. Surface mounted on 1’’×1’’ FR4 board, t 10s≦ 3. Pulse Test: Pulse width 300 µs, ≦ Duty cycle 2≦ % 4. Guaranteed by design, not subject to production testing.
-8 A, -30 V , R DS(ON) 21 m ΩΩ ΩΩ Dual-P Enhancement Mode Power MOSFET 10-Feb-2017 Rev. B Page 3 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES