SSG60P05J SECOS | Alldatasheet
Document overview
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Technical content
-5 A, -60 V , R DS(ON) 80 m ΩΩ ΩΩ P-Ch Enhancement Mode Power MOSFET 10-Feb-2017 Rev. B Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A H B M D C J K F L E N G RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SSG60P05J uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
FEATURES
/circle6 High density cell design for ultra low R DS(ON) /circle6 Fully characterized avalanche voltage and current /circle6 Excellent package for good heat dissipation
APPLICATIONS
/circle6 Power switching application /circle6 Hard switched and high frequency circuits /circle6 DC-DC converter MARKING
PACKAGE INFORMATION
(TA=25° C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID -5 A Pulsed Drain Current 1 IDM -25 A Thermal Resistance from Junction to Ambient 2 R θJA 100 ° C / W Lead Temperature for Soldering Purposes@1/8’’ from case for 10s TL 260 ° C Operating Junction and Storage Temperature Range T J, T STG 150, -55~150 ° C Q60P05 /box4/box4 /box4/box4 /box4/box4 /box4/box4 /boxopen/boxopen /boxopen/boxopen = Date Code S S S G D D D D A 5.80 6.20 H 0.33 0.51 B 4.700 5.10 J 0.375 REF. C 3.80 4.00 K 45 °REF. D 0° 8° L 1.35 1.75 E 0.40 1.27 M 0.10 0.25 F 0.17 0.25 N 0.25 REF. G 1.27 TYP. SOP-8
-5 A, -60 V , R DS(ON) 80 m ΩΩ ΩΩ P-Ch Enhancement Mode Power MOSFET 10-Feb-2017 Rev. B Page 2 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T A=25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test condition Off Characteristics Drain-Source Breakdown Voltage BV DSS -60 - - V V GS =0, I D = -250 µA Drain-Source Leakage Current I DSS - - -1 µA V DS = -60V,V GS =0 Gate-Body Leakage Current I GSS - - ±100 nA V DS =0V, VGS =±20V On Characteristics 3 Gate-Threshold Voltage V GS(th) -1.5 - -3.5 V V DS =V GS , I D = -250 µA Drain-Source On-Resistance R DS(ON) - - 80 m Ω V GS = -10V, I D = -5A Forward Transfer Conductance G fs 5 - - S V DS = -15V, I D = -5A Dynamic Characteristics Input Capacitance C iss - 1450 - Output Capacitance C oss - 145 - Reverse Transfer Capacitance C rss - 110 - pF VGS =0 VDS = -20V f=1MHz Switching Characteristics Turn-On Delay Time T d(on) - 8 - Rise Time T r - 9 - Turn-Off Delay Time T d(off) - 65 - Fall Time T f - 30 - nS VGS = -10V VDD = -30V R GEN = 6Ω R L= 30 Ω Total Gate Charge Q g - 26 - Gate-Source Charge Q gs - 4.5 - Gate-Drain (“Miller”) Charge Q gd - 7 - nC VGS = -10V VDS = -30V ID = -5A Source-Drain Diode Characteristics Forward On Voltage 3 V DS - - -1.2 V I S= -3A, V GS =0 Continuous Source Current 2 I S - - -5 A Notes: 1. Repetitive Rating : Pulse width is limited by the maximum junction temperature. 2. Surface mounted on FR4 board, t ≦10sec. 3. Pulse Test : Pulse width ≦300 µs, duty cycle ≦2%.
-5 A, -60 V , R DS(ON) 80 m ΩΩ ΩΩ P-Ch Enhancement Mode Power MOSFET 10-Feb-2017 Rev. B Page 3 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES