SSG55N60 SSDI | Alldatasheet

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NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TG0005A DOC Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404 -1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET TO-254 and TO-254Z TO-258 and TO-259 SSG55N60 series

55 AMP /600 Volts

1.65 V saturation

Features:

  • Lowest ON-resistance in the industry
  • Hermetically Sealed, Isolated Package
  • Low Total Gate Charge
  • Fast Switching
  • TX, TXV, S-Level screening available Maximum Ratings Symbol Value Units Collector – Emitter Breakdown Voltage VCES 600 V Gate – Emitter Voltage VGE ±20 V Max. Continuous Collector Current @ TC = 25ºC @ TC = 100ºC ID1 ID2 27 A Max. Instantaneous Drain Current (Tj limited) @ TC = 25ºC ID3 200 A Clamped Inductive Load current L= 10 uH ILM 200 A Repetitive Reverse Voltage Avalanche Energy Limited by Tj max EARV 20 mJ Total Power Dissipation @ TC = 25ºC PD 195 W Operating & Storage Temperature TOP & TSTG -55 to +150 ºC Maximum Thermal Resistance (Junction to Case) R0JC 0.64 (typ 0.35) ºC/W TO-254 (M) PIN 3 PIN 2 PIN 1 TO-254Z (Z) PIN 1 PIN 3 PIN 2 TO-258 (N) PIN 1 PIN 2 PIN 3 TO-259 (P) PIN 1 PIN 2 PIN 3

NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TG0005A DOC Solid State Devices, Inc. Phone: (562) 404-7855 * Fax: (562) 404 -1773 ssdi@ssdi-power.com * www.ssdi-power.com SSG50N60 series Electrical Characteristics 4/ Symbol Min Typ Max Units Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA BVCES 600 –– –– V Emitter to Collector Breakdown Voltage VGE = 0V, IC = 1 A BVECS 18 –– –– V Collector to Emitter Saturation Voltage VGE = 15V, IC = 27A, Tj= 25oC VGE = 15V, IC = 55A, Tj= 25oC VGE = 15V, IC = 27A, Tj= 150oC VCE(on) 1.65 2.0 1.6 2.0 V Gate Threshold Voltage VCE = VGE, IC = 0.25 mA VGS(th) 3.0 –– 6.0 V Gate to Emitter Leakage VGE = ±20V IGES –– –– ±100 nA Zero Gate Voltage Collector Current VCE = 600V, VGE = 0V, Tj = 25oC VCE = 10V, VGE = 0V, Tj = 25oC VCE = 600V, VGE = 0V, Tj = 150oC ICES 0.5 250 5000 µA µA µA Forward Transconductance VCE = 15V, IC = 27A, Tj = 25oC gfs 15 25 –– Mho Total Turn-on Gate Charge Gate to Emitter Turn-on Charge Gate to Collector Turn-on Charge VGE = 15V VCC = 400V IC = 27A Qg Qge Qgc 180 275 nC Turn on Delay Time Rise Time Turn off Delay Time Fall Time VGE = 15V, VCC = 480V, IC = 27A, RG = 5.0O, Tj = 25oC td(on) tr td(off) tf 175 260 130 nsec Turn-On Switching Losses Turn-Off Switching Losses Total Switching Losses VGE = 15V, VCC = 480V, IC = 27A, RG = 5.0O, Tj = 25oC Eon Eoff Ets 0.12 0.55 0.66 0.9 mJ Turn on Delay Time Rise Time Turn off Delay Time Fall Time Total Switching Losses VGE = 15V, VCC = 480V, IC = 27A, RG = 5.0O, Tj = 150oC td(on) tr td(off) tf Ets 230 120 1.6 260 130 ns ns ns ns mJ Input Capacitance Output Capacitance Reverse Transfer Capacitance VGE = 0V VCC = 30V f = 1 MHz Cies Coes Cres 4000 250 pF NOTES: * Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%. 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening per MIL-PRF-19500. 3/ For Package Outlines Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @25oC. Available Part Numbers: SSG55N60M SSG55N60Z SSG55N60N SSG55N60P PIN ASSIGNMENT (Standard) Package Drain Source Gate TO-254 (M) Pin 1 Pin 2 Pin 3 TO-254Z (Z) Pin 1 Pin 2 Pin 3 TO-258 (N) Pin 1 Pin 2 Pin 3 TO-259 (P) Pin 1 Pin 2 Pin 3