SSG5509A

SSG5509A SECOS | Alldatasheet

Document overview

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Technical content

N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.1 A, 30 V , R DS(ON) 30 mΩΩ ΩΩ P-Ch: -4.8 A, -30 V , R DS(ON) 55 mΩΩ ΩΩ Elektronische Bauelemente 27-Jun-2011 Rev. A Page 1 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SOP-8 A H B M D C J K F L E N G /boxopen/boxopen /boxopen/boxopen = Date Code 5509A SS /boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

The SSG5509A uses advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

FEATURES

/circle6 Lower Gate Charge /circle6 RoHS Compliant MARKING CODE

PACKAGE INFORMATION

(T A = 25 °C unless otherwise specified) Parameter Symbol Ratings Unit N-Ch P-Ch Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VGS ±12 ±12 V Continuous Drain Current 3 TA=25 ℃℃ ℃℃ ID 6.1 -4.8 A Pulsed Drain Current 1 IDM 30 -30 A Total Power Dissipation P D 2 W Operating Junction and Storage Temperature Range TJ, T STG -55~150 °C Linear Derating Factor 0.016 W / °C Thermal Resistance Ratings Maximum Thermal Resistance Junction-ambient 3 R θJA 62.5 °C / W REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 5.80 6.20 H 0.35 0.49 B 4.80 5.00 J 0.375 REF. C 3.80 4.00 K 45 ° D 0 ° 8 ° L 1.35 1.75 E 0.40 0.90 M 0.10 0.25 F 0.19 0.25 N 0.25 REF. G 1.27 TYP.

N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.1 A, 30 V , R DS(ON) 30 mΩΩ ΩΩ P-Ch: -4.8 A, -30 V , R DS(ON) 55 mΩΩ ΩΩ Elektronische Bauelemente 27-Jun-2011 Rev. A Page 2 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. N-CHANNEL ELECTRICAL CHARACTERISTICS (T J = 25 °C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BV DSS 30 - - V V GS =0, I D =250 µA Gate Threshold Voltage V GS(th) 0.5 - 1.2 V V DS =V GS , ID =250 µA Forward Transconductance g fs - 15 - S V DS =5V, I D =5A Gate-Source Leakage Current I GSS - - ±100 nA V GS = ±12V Drain-Source Leakage Current(TJ =25 ℃℃ ℃℃) IDSS - - 1 µA V DS =24V, V GS =0 Drain-Source Leakage Current(TJ =70 ℃℃ ℃℃) - - 25 µA V DS =24V, V GS =0 Static Drain-Source On-Resistance R DS(ON) - - 30 m Ω VGS =10V, I D =5.8A - - 35 V GS =4.5V, I D =5A 55 V GS =2.5V, I D =4A Total Gate Charge 2 Q g - 9.7 nC ID =5.8A VDS =15V VGS =4.5V Gate-Source Charge Q gs - 1.6 - Gate-Drain (“Miller”) Change Q gd - 3.1 - Turn-on Delay Time 2 T d(on) - 3.3 - nS VDS =15V VGS =10V R G =3Ω R L=2.7 Ω Rise Time Tr - 4.8 - Turn-off Delay Time T d(off) - 26.3 - Fall Time Tf - 4.1 - Input Capacitance C iss - 823 - pF VGS =0 VDS =15V f=1.0 MHz Output Capacitance C oss - 99 - Reverse Transfer Capacitance C rss - 77 - Source -Drain Diode Forward On Voltage 2 V SD - - 1.0 V I S=1A, V GS =0 Reverse Recovery Time 2 T rr - 16 - nS IS=5A, V GS =0, dl/dt =100A/ µs Reverse Recovery Charge Q rr - 8.9 - nC Continuous Source Current (Body Diode) IS - - 2.5 A V D =V G =0, V S=1.0V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width ≦300us, duty cycle ≦2%. 3. Surface mounted on 1 in 2 copper pad of FR4 board; 135 °C/W when mounted on Min. copper pad.

N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.1 A, 30 V , R DS(ON) 30 mΩΩ ΩΩ P-Ch: -4.8 A, -30 V , R DS(ON) 55 mΩΩ ΩΩ Elektronische Bauelemente 27-Jun-2011 Rev. A Page 3 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. P-CHANNEL ELECTRICAL CHARACTERISTICS (TJ=25 °C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BV DSS -30 - - V V GS =0, I D = -250 µA Gate Threshold Voltage V GS(th) -0.5 - -1.2 V V DS =V GS , I D = -250 µA Forward Transconductance g fs - 11 - S V DS = -5V, I D = -5A Gate-Source Leakage Current I GSS - - ±100 nA V GS = ±12V Drain-Source Leakage Current(TJ =25 ℃℃ ℃℃) IDSS - - -1 µA V DS = -24V, V GS =0 Drain-Source Leakage Current(TJ =70 ℃℃ ℃℃) - - -25 µA V DS = -24V, V GS =0 Static Drain-Source On-Resistance R DS(ON) - - 55 m Ω VGS = -10V, I D = -4.2A Total Gate Charge 2 Q g - 9.4 - nC ID = -4 A VDS = -15V VGS = -4.5V Gate-Source Charge Q gs - 2 - Gate-Drain (“Miller”) Change Q gd - 3 - Turn-on Delay Time 2 T d(on) - 6.3 - nS VDS = -15V VGS = -10V R G =6Ω R L=3.6 Ω Rise Time Tr - 3.2 - Turn-off Delay Time T d(off) - 38.2 - Fall Time Tf - 12 - Input Capacitance C iss - 954 - pF VGS =0 VDS = -15V f=1.0 MHz Output Capacitance C oss - 115 - Reverse Transfer Capacitance C rss - 77 - Source -Drain Diode Forward On Voltage 2 V SD - - -1.0 V I S= -1A, V GS =0 Reverse Recovery Time 2 T rr - 20.2 - nS IS= -4A, V GS =0, dl/dt=100A/ µs Reverse Recovery Charge Q rr - 11.2 - nC Continuous Source Current (Body Diode) IS - - -2.2 A V D =V G =0, V S= -1V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width ≦300us, duty cycle ≦2%. 3. Surface mounted on 1 in 2 copper pad of FR4 board; 135 °C/W when mounted on Min. copper pad.

N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.1 A, 30 V , R DS(ON) 30 mΩΩ ΩΩ P-Ch: -4.8 A, -30 V , R DS(ON) 55 mΩΩ ΩΩ Elektronische Bauelemente 27-Jun-2011 Rev. A Page 4 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE (N-Ch)

N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.1 A, 30 V , R DS(ON) 30 mΩΩ ΩΩ P-Ch: -4.8 A, -30 V , R DS(ON) 55 mΩΩ ΩΩ Elektronische Bauelemente 27-Jun-2011 Rev. A Page 5 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE (N-Ch)

N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.1 A, 30 V , R DS(ON) 30 mΩΩ ΩΩ P-Ch: -4.8 A, -30 V , R DS(ON) 55 mΩΩ ΩΩ Elektronische Bauelemente 27-Jun-2011 Rev. A Page 6 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE (P-Ch)

N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.1 A, 30 V , R DS(ON) 30 mΩΩ ΩΩ P-Ch: -4.8 A, -30 V , R DS(ON) 55 mΩΩ ΩΩ Elektronische Bauelemente 27-Jun-2011 Rev. A Page 7 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE (P-Ch)