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-5.2 A, -30 V , RDS(ON) 52 m Dual P-Ch Enhancement Mode Power MOSFET 15-Jan-2011 Rev. B Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system.

FEATURES

 Low RDS(on) provides higher efficiency and extends battery life.  Miniature SOP-8 surface mount package saves board space.  High power and current handling capability..  Extended VGS range (±25) for battery pack applications.

PACKAGE INFORMATION

SOP-8 2.5K 13’ inch MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage V DS -30 V Gate-Source Voltage V GS ±25 V TA = 25°C -5.2 A Continuous Drain Current 1 TA = 70°C ID @ -4.2 A Pulsed Drain Current 2 I DM -30 A Continuous Source Current (Diode Conduction) 1 I S -1.6 A TA = 25°C 2.1 W Power Dissipation 1 TA = 70°C PD @ 1.3 W Operating Junction & Storage Temperature Range T J, TSTG -55 ~ 150 °C Thermal Resistance Ratings Junction to Case (Max.) 1 t≦5 sec RθJC 40 °C / W Junction to Ambient (Max.) 1 t≦10 sec RθJA 60 °C / W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. SOP-8 A 5.80 6.20 H 0.35 0.49 B 4.80 5.00 J 0.375 REF. C 3.80 4.00 K 45 ° D0 ° 8 ° L 1.35 1.75 E 0.40 0.90 M 0.10 0.25 F 0.19 0.25 N 0.25 REF. G 1.27 TYP. A H B M D C J K F L E N G S G G S D D D D

-5.2 A, -30 V , RDS(ON) 52 m Dual P-Ch Enhancement Mode Power MOSFET 15-Jan-2011 Rev. B Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Gate Threshold Voltage V GS(th) -1 - - V V DS= VGS, ID= -250μA Gate-Body Leakage Current I GSS - - ±100 nA V DS= 0V, VGS= ±25V - - -1 μA V DS= -24V, VGS= 0V Zero Gate Voltage Drain Current I DSS - - -5 μA V DS= -24V, VGS= 0V, TJ=55°C On-State Drain Current 1 I D(on) -30 - - A V DS= -5V, VGS= -10V - - 52 V GS= -10V, ID= -5.2A Drain-Source On-Resistance 1 R DS(ON) - - 89 mΩ VGS= -4.5V, ID= -4.0A Forward Transconductance 1 g fs - 19 - S V DS= -15V, ID= -5.2A Diode Forward Voltage V SD - -0.7 - V I S= -2.1A, VGS= 0V Dynamic 2 Total Gate Charge Q g - 15 - Gate-Source Charge Q gs - 2.2 - Gate-Drain Charge Q gd - 1.7 - nC ID= -5.2A VDS= -15V VGS= -10V Turn-On Delay Time T d(on) - 10 - Rise Time T r - 2.8 - Turn-Off Delay Time T d(off) - 53.6 - Fall Time T f - 46 - nS VDD= -15V ID= -1A VGEN= -10V RL= 15Ω, RG= 6Ω Notes: 1. Pulse test ：PW ≦ 300 μs duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing.

-5.2 A, -30 V , RDS(ON) 52 m Dual P-Ch Enhancement Mode Power MOSFET 15-Jan-2011 Rev. B Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES

-5.2 A, -30 V , RDS(ON) 52 m Dual P-Ch Enhancement Mode Power MOSFET 15-Jan-2011 Rev. B Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES