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8.3A , 40V , RDS(ON) 23 m Dual-N Enhancement Mode Power MOSFET 20-Feb-2012 Rev. B Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A H B M D C J K F L E N G RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low R DS(ON) and to ensure minimal power loss and heat dissipation.

FEATURES

 Low R DS(on) provides higher efficiency and extends battery life.  Low thermal impedance copper leadframe SOP-8 saves board space.  Fast switching speed.  High performance trench technology. APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones

PACKAGE INFORMATION

SOP-8 2.5K 13 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage V DS 40 V Gate-Source Voltage V GS ±20 V TA=25°C 8.3 Continuous Drain Current 1 TA=70°C ID 6.8 A Pulsed Drain Current 2 I DM 50 A Continuous Source Current (Diode Conduction) 1 I S 3.1 A TA=25°C 2.1 Power Dissipation 1 TA=70°C PD 1.3 W Operating Junction & Storage Temperature Range T J, TSTG -55~150 °C Thermal Resistance Rating t ≦ 10 sec 62.5 °C / W Maximum Junction to Ambient 1 Steady State RθJA 110 °C / W Notes: 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. SOP-8 A 5.80 6.20 H 0.35 0.49 B 4.80 5.00 J 0.375 REF. C 3.80 4.00 K 45 ° D0 ° 8 ° L 1.35 1.75 E 0.40 0.90 M 0.10 0.25 F 0.19 0.25 N 0.25 REF. G 1.27 TYP. G S G S D D D D

8.3A , 40V , RDS(ON) 23 m Dual-N Enhancement Mode Power MOSFET 20-Feb-2012 Rev. B Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test conditions Static Gate-Threshold Voltage V GS(th) 1 - - V V DS=VGS, ID=250μA Gate-Body Leakage I GSS - - ±100 nA V DS=0, VGS=±20V - - 1 μA V DS=32V, VGS=0 Zero Gate Voltage Drain Current I DSS - - 25 μA V DS=32V, VGS=0, TJ=55°C On-State Drain Current 1 I D(on) 15 - - A V DS=5V, VGS=10V - - 23 V GS=10V, ID=6.6A Drain-Source On-Resistance 1 R DS(ON) - - 30 mΩ VGS=4.5V, ID=5.6A Forward Transconductance 1 g fs - 15 - S V DS=15V, ID=6.6A Diode Forward Voltage V SD - 0.74 - V I S=1.6A, VGS=0 Gate Resistance R g 1.4 Ω f=1.0MHz Dynamic 2 Input Capacitance C iss 1389 Output Capacitance C oss 169 Reverse Transfer Capacitance C rss 134 pF VDS=15V, VGS=0, f=1MHz Total Gate Charge Q g - 13 - Gate-Source Charge Q gs - 3.4 - Gate-Drain Charge Q gd - 7 - nC ID=6.6A VDS=20V VGS=4.5V Turn-On Delay Time T d(on) - 8 - Rise Time T r - 10 - Turn-Off Delay Time T d(off) - 37 - Fall Time T f - 16 - nS VDs=20V ID=6.6A VGEN=10V RL=3.1Ω RGEN=6Ω Notes: 1 Pulse test ：PW≦300μs duty cycle≦2%. 2 Guaranteed by design, not s ubject to production testing.

8.3A , 40V , RDS(ON) 23 m Dual-N Enhancement Mode Power MOSFET 20-Feb-2012 Rev. B Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES

8.3A , 40V , RDS(ON) 23 m Dual-N Enhancement Mode Power MOSFET 20-Feb-2012 Rev. B Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES