SSG4842N_15 SECOS | Alldatasheet

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Technical content

23A , 40V , R DS(ON) 9 mΩΩ ΩΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 13-Dec-2011 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low R DS(on) and to ensure minimal power loss and heat dissipation.

FEATURES

/circle6 Low R DS(on) Provides Higher Efficiency And Extends Battery Life. /circle6 Low Thermal Impedance Copper Leadframe SOIC-8 Saves Board Space /circle6 Fast Switching Speed /circle6 High Performance Trench Technology APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

PACKAGE INFORMATION

SOP-8 2.5K 13 inch MAXIMUM RATINGS (TA=25 °C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS 20 V Continuous Drain Current 1 TA = 25° C ID 23 A TA = 70° C 19 A Pulsed Drain Current 2 IDM 60 A Continuous Source Current (Diode Conduction) 1 I S 2.9 A Total Power Dissipation 1 TA = 25° C PD 3.1 W TA = 70° C 2.2 W Operating Junction & Storage Temperature Range T J, T STG -55~150 ° C Thermal Resistance Rating Thermal Resistance Junction-Ambient (Max.) 1 t ≦ 10 sec R θJA 40 ° C / W Steady State 80 ° C / W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. SOP-8 REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 5.80 6. 20 H 0.35 0.4 9 B 4.80 5.0 0 J 0. 375 REF. C 3.80 4.00 K 45 ° D 0° 8° L 1.35 1. 75 E 0.40 0.90 M 0.10 0.25 F 0. 19 0. 25 N 0.25 REF. G 1.27 TYP. A H B M D C J K F L E N G G S S S D D D D

23A , 40V , R DS(ON) 9 mΩΩ ΩΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 13-Dec-2011 Rev. A Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS

(T A=25 °C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Gate Threshold Voltage V GS(th) 1 - - V V DS =V GS , I D =250 µA Gate-Body Leakage I GSS - - 100 nA V DS =0, VGS =20V Zero Gate Voltage Drain Current I DSS - - 1 µA VDS =24V, V GS =0 - - 5 V DS =24V, V GS =0, T J=55° C On-State Drain Current 1 I D(on) 30 - - A V DS =5V, V GS =10V Drain-Source On-Resistance 1 R DS(ON) - - 9 m Ω VGS =10V, I D =23A - - 12 V GS =4.5V, I D =20A Forward Transconductance 1 g fs - 90 - S V DS =15V, I D =23A Diode Forward Voltage V SD - 0.7 - V I S=2.3A, V GS =0 Dynamic 2 Total Gate Charge Q g - 25 - nC ID =23A VDS =15V VGS =4.5V Gate-Source Charge Q gs - 6 - Gate-Drain Charge Q gd - 9 - Turn-On Delay Time T d(on) - 20 - nS VDD =15V ID =1A VGEN =10V R L=6Ω Rise Time T r - 13 - Turn-Off Delay Time T d(off) - 82 - Fall Time T f - 43 - Notes: 1. Pulse test ：PW ≦300 µs duty cycle ≦2%. 2. Guaranteed by design, not subject to production testing.