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Technical content
-11.5 A, 30 V , RDS(ON) 13 m P-Channel Mode Power MOSFET 31-Dec-2010 Rev. B Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A H B M D C J K F L E N G RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
FEATURES
Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology.
PACKAGE INFORMATION
SOP-8 2.5K 13’ inch MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage V DS -30 V Gate-Source Voltage V GS ±25 V ID @ TA = 25°C -11.5 A Continuous Drain Current 1 ID @ TA = 70°C -9.3 A Pulsed Drain Current 2 I DM ±50 A Continuous Source Current (Diode Conduction) 1 I S -2.1 A PD @ TA = 25°C 3.1 W Total Power Dissipation 1 PD @ TA = 70°C 2.3 W Operating Junction & Storage Temperature Range T J, TSTG -55 ~ 150 °C Thermal Resistance Ratings Thermal Resistance Junction-Case (Max.) 1 t ≦ 5 sec R θJC 25 °C / W Thermal Resistance Junction-Ambient (Max.) 1 t ≦ 5 sec R θJA 50 °C / W Notes: 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. SOP-8 A 5.80 6.20 H 0.35 0.49 B 4.80 5.00 J 0.375 REF. C 3.80 4.00 K 45 ° D0 ° 8° L 1.35 1.75 E 0.40 0.90 M 0.10 0.25 F 0.19 0.25 N 0.25 REF. G 1.27 TYP. D D S S G S D D ESD Protection Diode 3KV
-11.5 A, 30 V , RDS(ON) 13 m P-Channel Mode Power MOSFET 31-Dec-2010 Rev. B Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage V (BR)DSS -30 - - V V GS= 0V, ID= -250μA Gate Threshold Voltage V GS(th) -1 - - V V DS= VGS, ID= -250μA Gate-Body Leakage Current I GSS - - ±1 μA VDS= 0V, VGS= ±25V - - -1 μA V DS= -24V, VGS= 0V Zero Gate Voltage Drain Current I DSS - - -5 μA V DS= -24V, VGS= 0V, TJ= 55°C On-State Drain Current 1 I D(on) -50 - - A V DS= -5V, VGS= -10V Drain-Source On-Resistance 1 R DS(ON) - - 19 mΩ VGS= -4.5V, ID= -9.3A Forward Transconductance 1 g fs - 29 - S V DS= -15V, ID= -11.5A Diode Forward Voltage V SD - -0.8 - V I S= 2.5A, VGS= 0V Dynamic 2 Total Gate Charge Q g - 25 - Gate-Source Charge Q gs - 11 - Gate-Drain Charge Q gd - 17 - nC ID= -11.5A VDS= -15V VGS= -5V Input Capacitance C iss - 2300 - Output Capacitance C oss - 600 - Reverse Transfer Capacitance C rss - 300 - pF VDS= -15V VGS= 0V f= 1MHz Turn-On Delay Time T d(on) - 15 - Rise Time T r - 13 - Turn-Off Delay Time T d(off) - 100 - Fall Time T f - 54 - nS VDD= -15V ID= -1A VGEN= -10V RL= 6Ω Notes: 1 Pulse test ：PW ≦ 300 μs duty cycle ≦ 2%. 2 Guaranteed by design, not s ubject to production testing.