SSG4530C

SSG4530C_15 SECOS | Alldatasheet

Document overview

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Technical content

N-Ch: 5.3A, 30V , RDS(ON) 82 mΩΩ ΩΩ P-Ch: -5.2A, -30V , RDS(ON) 80 mΩΩ ΩΩ N & P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 30-Jul-2012 Rev. A Page 1 of 6 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A H B M D C J K F L E N G RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low R DS(on) and to ensure minimal power loss and heat dissipation.

FEATURES

/circle6 Low R DS(on) provides higher efficiency and extends battery life. /circle6 Low thermal impedance copper leadframe SOP-8 saves board space /circle6 Fast switching speed /circle6 High performance trench technology APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers,. printers, PCMCIA cards, cellular and cordless telephones

PACKAGE INFORMATION

SOP-8 2.5K 13 inch ABSOLUTE MAXIMUM RATINGS (TA=25 °C unless otherwise specified) Parameter Symbol Rating Unit N-CH P-CH Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VGS ±20 ±20 V Continuous Drain Current 1 TA = 25° C ID 5.3 -5.2 A TA = 70° C 4.2 -4.1 A Pulsed Drain Current 2 IDM 20 -20 A Continuous Source Current (Diode Conduction) 1 I S 1.3 -1.3 A Total Power Dissipation 1 TA = 25° C PD 2.1 W TA = 70° C 1.3 W Operating Junction & Storage Temperature Range T J, T STG -55 ~ 150 ° C Thermal Resistance Ratings Maximum Junction-to-Ambient 1 t≦10 sec R θJA 62.5 ° C / W Steady State 110 ° C / W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 5.8 6. 20 H 0.35 0.51 B 4.80 5. 00 J 0. 375 REF. C 3.80 4.00 K 45 ° D 0° 8° L 1.35 1. 75 E 0. 50 0.93 M 0.10 0.25 F 0. 19 0. 25 N 0.25 REF. G 1.27 TYP. SOP-8 Top View

N-Ch: 5.3A, 30V , RDS(ON) 82 mΩΩ ΩΩ P-Ch: -5.2A, -30V , RDS(ON) 80 mΩΩ ΩΩ N & P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 30-Jul-2012 Rev. A Page 2 of 6 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS

(T A=25 °C unless otherwise specified) Parameter Symbol Ch Min. Typ. Max. Unit Teat Conditions Static Gate Threshold Voltage V GS(th) N 1.2 1.7 2.5 V VDS =V GS , I D =250 µA P -1.2 -1.8 -2.5 V DS =V GS , I D = -250 µA Gate-Body Leakage I GSS N - ±80 ±100 nA VDS =0, VGS =20V P - ±80 ±100 V DS =0, VGS = -20V Zero Gate Voltage Drain Current IDSS N - 0.8 1 µA VDS =24V, V GS =0 P - -0.8 -1 V DS = -24V, V GS =0 On-State Drain Current 1 I D(on) N 20 24 - A VDS =5V, V GS =10V P -20 -24 - V DS = -5V, V GS = -10V Drain-Source On-Resistance 1 R DS(ON) N - 43 50 m Ω VGS =10V, I D =5.3A - 70 82 V GS =4.5V, I D =4.2A P - 45 52 V GS = -10V, I D = -5.2A - 72 80 V GS = -4.5V, I D = -4.2A Diode Forward Voltage V SD N - 0.75 - V VGS =0, I S=1.3A Dynamic 2 Total Gate Charge Q g N - 2.2 - nC N-Channel I D =5.3A, VDS =15V, VGS =10V P-Channel I D = -5.2A, VDS = -10V, VGS = -15V P - 10 - Gate-Source Charge Q gs N - 0.5 - P - 2.2 - Gate-Drain Charge Q gd N - 0.8 - P - 1.7 - Turn-On Delay Time T d(on) N - 8 - nS N-Channel V DD =15V, V GEN =10V ID =1A, RGEN =6Ω P-Channel V DD = -15V, V GEN = -10V ID = -1A, R GEN =6Ω P - 10 - Rise Time T r N - 5 - P - 2.8 - Turn-Off Delay Time T d(off) N - 23 - P - 53.6 - Fall Time T f N - 3 - P - 46 - Notes: 1. Pulse test ：PW 300 µs duty cycle≦ ≦ 2%. 2. Guaranteed by design, not subject to production testing.

N-Ch: 5.3A, 30V , RDS(ON) 82 mΩΩ ΩΩ P-Ch: -5.2A, -30V , RDS(ON) 80 mΩΩ ΩΩ N & P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 30-Jul-2012 Rev. A Page 3 of 6 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES (N-Channel)

N-Ch: 5.3A, 30V , RDS(ON) 82 mΩΩ ΩΩ P-Ch: -5.2A, -30V , RDS(ON) 80 mΩΩ ΩΩ N & P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 30-Jul-2012 Rev. A Page 4 of 6 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES

N-Ch: 5.3A, 30V , RDS(ON) 82 mΩΩ ΩΩ P-Ch: -5.2A, -30V , RDS(ON) 80 mΩΩ ΩΩ N & P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 30-Jul-2012 Rev. A Page 5 of 6 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES (P-Channel)

N-Ch: 5.3A, 30V , RDS(ON) 82 mΩΩ ΩΩ P-Ch: -5.2A, -30V , RDS(ON) 80 mΩΩ ΩΩ N & P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 30-Jul-2012 Rev. A Page 6 of 6 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES