DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 6
Technical content
N-Ch: 6.6A, 20V , RDS(ON) 47 m P-Ch: -5.2A, -20V , RDS(ON) 79 m N & P-Ch Enhancement Mode Power MOSFET 10-Jan-2012 Rev. D Page 1 of 6 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A H B M D C J K F L E N G RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low R DS(on) and to ensure minimal power loss and heat dissipation.
FEATURES
Low R DS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space Fast switching speed High performance trench technology APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers,. printers, PCMCIA cards, cellular and cordless telephones
PACKAGE INFORMATION
SOP-8 2.5K 13 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Rating Parameter Symbol N-CH P-CH Unit Drain-Source Voltage V DS 20 -20 V Gate-Source Voltage V GS ±8 ±8 V TA = 25°C 6.6 -5.2 A Continuous Drain Current 1 TA = 70°C ID 5 -3.8 A Pulsed Drain Current 2 I DM 20 -20 A Continuous Source Current (Diode Conduction) 1 I S 2.2 -2.2 A TA = 25°C 2.1 W Total Power Dissipation 1 TA = 70°C PD 1.3 W Operating Junction & Storage Temperature Range T J, TSTG -55 ~ 150 °C Thermal Resistance Ratings t≦10 sec 62.5 °C / W Maximum Junction-to-Ambient 1 Steady State RθJA 110 °C / W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. A 5.8 6.20 H 0.35 0.51 B 4.80 5.00 J 0.375 REF. C 3.80 4.00 K 45 ° D0 ° 8 ° L 1.35 1.75 E 0.50 0.93 M 0.10 0.25 F 0.19 0.25 N 0.25 REF. G 1.27 TYP. SOP-8 Top View
N-Ch: 6.6A, 20V , RDS(ON) 47 m P-Ch: -5.2A, -20V , RDS(ON) 79 m N & P-Ch Enhancement Mode Power MOSFET 10-Jan-2012 Rev. D Page 2 of 6 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Ch Min. Typ. Max. Unit Teat Conditions Static N 1 - - V DS=VGS, ID=250μA Gate Threshold Voltage V GS(th) P -1 - - V VDS=VGS, ID= -250μA N - - ±100 V DS=0, VGS=8V Gate-Body Leakage I GSS P - - ±100 nA VDS=0, VGS= -8V N - - 1 V DS=8V, VGS=0 Zero Gate Voltage Drain Current I DSS P - - -1 μA VDS= -8V, VGS=0 N 10 - - V DS=5V, VGS=4.5V On-State Drain Current 1 I D(on) P -10 - - A VDS= -5V, VGS= -4.5V - - 47 V GS=4.5V, ID=5.3A N - - 55 V GS=2.5V, ID=5A Drain-Source On-Resistance 1 R DS(ON) P - - 110 mΩ VGS= -2.5V, ID= -3.8A N 0.7 V GS=0, IS=1.1A Diode Forward Voltage V SD P -0.73 V VGS=0, IS= -1.1A N - 10 - V DS=10V, ID=5.3A Forward Transconductance 1 g fs P - 10 - S VDS= -10V, ID= -4.2A Dynamic 2 N 439 Input Capacitance Ciss P 683 N 78 Output Capacitance Coss P 90 N 68 Reverse Transfer Capacitance Crss P 75 pF N-Channel VDS=15V, VGS=0, f=1MHz P-Channel V DS= -15V, VGS=0, f=1MHz N - 6 - Total Gate Charge Q g P - 11 - N - 0.9 - Gate-Source Charge Q gs P - 2.8 - N - 2.1 - Gate-Drain Charge Q gd P - 2.7 - nC N-Channel ID=5.3A, VDS=10V, VGS=4.5V P-Channel I D= -4.2A, VDS= -10V, VGS= -4.5V N - 7 - Turn-On Delay Time T d(on) P - 10 - N - 24 - Rise Time T r P - 20 - N - 35 - Turn-Off Delay Time T d(off) P - 49 - N - 19 - Fall Time T f P - 21 - nS N-Channel VDD=10V, VGEN=4.5V ID=5.3A, RGEN=6Ω, RL=1.8Ω P-Channel V DD= -10V, VGEN= -4.5V ID= -4.2A, RGEN=6Ω, RL=2.3Ω Notes: 1. Pulse test ：PW 300 μs duty cycle≦≦ 2%. 2. Guaranteed by design, not s ubject to production testing.
N-Ch: 6.6A, 20V , RDS(ON) 47 m P-Ch: -5.2A, -20V , RDS(ON) 79 m N & P-Ch Enhancement Mode Power MOSFET 10-Jan-2012 Rev. D Page 3 of 6 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES (N-Channel)
N-Ch: 6.6A, 20V , RDS(ON) 47 m P-Ch: -5.2A, -20V , RDS(ON) 79 m N & P-Ch Enhancement Mode Power MOSFET 10-Jan-2012 Rev. D Page 4 of 6 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES
N-Ch: 6.6A, 20V , RDS(ON) 47 m P-Ch: -5.2A, -20V , RDS(ON) 79 m N & P-Ch Enhancement Mode Power MOSFET 10-Jan-2012 Rev. D Page 5 of 6 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES (P-Channel)
N-Ch: 6.6A, 20V , RDS(ON) 47 m P-Ch: -5.2A, -20V , RDS(ON) 79 m N & P-Ch Enhancement Mode Power MOSFET 10-Jan-2012 Rev. D Page 6 of 6 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES