SSG4512CE_15 SECOS | Alldatasheet

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N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.9 A, 30 V , R DS(ON) 31 mΩΩ ΩΩ P-Ch: -5.2 A, -30 V , R DS(ON) 52 mΩΩ ΩΩ Elektronische Bauelemente 26-Dec-2011 Rev. A Page 1 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.

FEATURES

/circle6 Low R DS(on) provides higher efficiency and extends battery life. /circle6 Low thermal impedance copper leadframe SOP-8 saves board space. /circle6 Fast Switch Speed. /circle6 High performance trench technology. APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

PACKAGE INFORMATION

SOP-8 2.5K 13 inch MAXIMUM RATINGS (T A=25 °C unless otherwise specified) Parameter Symbol Ratings Unit N-Ch P-Ch Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VGS ±20 ±20 V Continuous Drain Current 1 TA=25 °C ID 6.9 -5.2 A Pulsed Drain Current 2 IDM 20 -20 A Continuous Source Current (Diode Conduction) 1 I S 1.3 -1.3 A Total Power Dissipation 1 TA=25 °C PD 2.1 2.1 W TA=70 °C 1.3 1.3 W Operating Junction and Storage Temperature Range TJ, T STG -55~150 °C Thermal Resistance Ratings Maximum Junction-ambient 1 t<=5 sec R θJA 60 °C / W Maximum Junction-Case 1 t<=5 sec R θJC 40 °C / W Notes ： 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature SOP-8 A H B M D C J K F L E N G REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 5.80 6. 20 H 0.35 0.4 9 B 4.80 5.0 0 J 0. 375 REF. C 3.80 4.00 K 45 ° D 0° 8° L 1.35 1. 75 E 0.40 0.90 M 0.10 0.25 F 0. 19 0. 25 N 0.25 REF. G 1.27 TYP. D2 G2

N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.9 A, 30 V , R DS(ON) 31 mΩΩ ΩΩ P-Ch: -5.2 A, -30 V , R DS(ON) 52 mΩΩ ΩΩ Elektronische Bauelemente 26-Dec-2011 Rev. A Page 2 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. N-CHANNEL ELECTRICAL CHARACTERISTICS (T A=25 °C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Static Gate Threshold Voltage V GS(th) 1 - - V V DS =V GS , I D =250 µA Gate-Source Leakage Current I GSS - - ±100 nA V GS = 8V, V DS =0 Drain-Source Leakage Current I DSS - - 1 µA V DS =24V, V GS =0 On-State Drain Current 1 I D(ON) 20 - - A V DS =5V, V GS =10V Static Drain-Source On-Resistance 1 R DS(ON) - - 31 m Ω VGS =10V, I D =6.9A - - 40 V GS =4.5V, I D =6A Forward Transconductance 1 g fs - 25 - S V DS =15V, I D =6.9A Dynamic Total Gate Charge Q g - 4.0 nC ID =6.9A VDS =15V VGS =10V Gate-Source Charge Q gs - 1.1 - Gate-Drain (“Miller”) Change Q gd - 1.4 - Turn-on Delay Time T d(on) - 8 - nS VDD =15V VGS =10V ID =1A R GEN =6Ω Rise Time Tr - 5 - Turn-off Delay Time T d(off) - 23 - Fall Time Tf - 3 - Notes: 1. Pulse test: PW ≦ 300us duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing.

N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.9 A, 30 V , R DS(ON) 31 mΩΩ ΩΩ P-Ch: -5.2 A, -30 V , R DS(ON) 52 mΩΩ ΩΩ Elektronische Bauelemente 26-Dec-2011 Rev. A Page 3 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. P-CHANNEL ELECTRICAL CHARACTERISTICS (T A=25 °C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Static Gate Threshold Voltage V GS(th) -1 - - V V DS =V GS , I D = -250 µA Gate-Source Leakage Current I GSS - - ±100 nA V GS = -8V, V DS =0 Drain-Source Leakage Current I DSS - - -1 µA V DS = -24V, V GS =0 On-State Drain Current 1 I D(ON) -20 - - A V DS = -5V, V GS = -10V Static Drain-Source On-Resistance 1 R DS(ON) - - 52 m Ω VGS = -10V, I D = -5.2A Forward Transconductance 1 g fs - 10 - S V DS = -15V, I D = -5.2A Dynamic Total Gate Charge Q g - 10 nC ID = -5.2A VDS = -15V VGS = -10V Gate-Source Charge Q gs - 2.2 - Gate-Drain (“Miller”) Change Q gd - 1.7 - Turn-on Delay Time T d(on) - 10 - nS VDD = -15V VGS = -10V ID = -1A R GEN =6Ω Rise Time Tr - 2.8 - Turn-off Delay Time T d(off) - 53.6 - Fall Time Tf - 46 - Notes: 1. Pulse test: PW ≦ 300us duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing.

N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.9 A, 30 V , R DS(ON) 31 mΩΩ ΩΩ P-Ch: -5.2 A, -30 V , R DS(ON) 52 mΩΩ ΩΩ Elektronische Bauelemente 26-Dec-2011 Rev. A Page 4 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE (N-Ch)

N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.9 A, 30 V , R DS(ON) 31 mΩΩ ΩΩ P-Ch: -5.2 A, -30 V , R DS(ON) 52 mΩΩ ΩΩ Elektronische Bauelemente 26-Dec-2011 Rev. A Page 5 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE (N-Ch)

N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.9 A, 30 V , R DS(ON) 31 mΩΩ ΩΩ P-Ch: -5.2 A, -30 V , R DS(ON) 52 mΩΩ ΩΩ Elektronische Bauelemente 26-Dec-2011 Rev. A Page 6 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE (P-Ch)

N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.9 A, 30 V , R DS(ON) 31 mΩΩ ΩΩ P-Ch: -5.2 A, -30 V , R DS(ON) 52 mΩΩ ΩΩ Elektronische Bauelemente 26-Dec-2011 Rev. A Page 7 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE (P-Ch)