SSG4510

SSG4510_15 SECOS | Alldatasheet

Document overview

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Technical content

N & P-Ch Enhancement Mode Power MOSFET N-Ch: 2.5 A, 100 V , R DS(ON) 112 mΩΩ ΩΩ P-Ch: -2.5A, -100 V , R DS(ON) 180 mΩΩ ΩΩ Elektronische Bauelemente 18-Jun-2012 Rev. A Page 1 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 4510SS /boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen /UIrecord/UIrecord /UIrecord/UIrecord /boxopen/boxopen /boxopen/boxopen = Date Code RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

The SSG4510 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

FEATURES

/circle6 Simple Drive Requirement /circle6 Lower On-resistance /circle6 Fast Switching Performance MARKING

PACKAGE INFORMATION

SOP-8 2.5K 13 inch ABSOLUTE MAXIMUM RATINGS Parameter Symbol Ratings Unit N-Ch P-Ch Drain-Source Voltage VDS 100 -100 V Gate-Source Voltage VGS ±20 ±20 V Continuous Drain Current 3 TA=25 °C ID 2.5 -2.5 A TA=70 °C 2 -2 A Pulsed Drain Current 1 IDM 10 -10 A Total Power Dissipation T A=25 °C PD 2 W Operating Junction and Storage Temperature Range TJ, T STG -55~150 °C Thermal Data Thermal Resistance Junction-ambient 3 R θJA 62.5 °C / W SOP-8 A H B M D C J K F L E N G REF. Millimeter REF. M illimeter Min. Max. Min. Max. A 5.80 6. 20 H 0.35 0.4 9 B 4.80 5.0 0 J 0. 375 REF. C 3.80 4.00 K 45 ° D 0° 8° L 1.35 1. 75 E 0.40 0.90 M 0.10 0.25 F 0. 19 0. 25 N 0.25 REF. G 1.27 TYP. G G S S D D D D

N & P-Ch Enhancement Mode Power MOSFET N-Ch: 2.5 A, 100 V , R DS(ON) 112 mΩΩ ΩΩ P-Ch: -2.5A, -100 V , R DS(ON) 180 mΩΩ ΩΩ Elektronische Bauelemente 18-Jun-2012 Rev. A Page 2 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. N-CHANNEL ELECTRICAL CHARACTERISTICS (T J=25 °C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BV DSS 100 - - V V GS =0, I D =250 µA Gate Threshold Voltage V GS(th) 1.0 - 2.5 V V DS =V GS , I D =250 µA Forward Transconductance g fs - 20 - S V DS =5V, I D =2A Gate-Source Leakage Current I GSS - - ±100 nA V GS = ±20V Drain-Source Leakage Current TJ=25 °C IDSS - - 1 µA V DS =80V, V GS =0 TJ=55°C - - 5 Static Drain-Source On-Resistance 2 R DS(ON) - - 112 m Ω VGS =10V, I D =2A - - 120 V GS =4.5V, I D =1A Total Gate Charge 2 Q g - 26.2 - nC ID =2A VDS =80V VGS =10V Gate-Source Charge Q gs - 3.8 - Gate-Drain (“Miller”) Change Q gd - 4.8 - Turn-on Delay Time 2 T d(on) - 4.2 - nS VDS =50V VGS =10V ID =2A R G =3.3 Ω R D =15 Ω Rise Time Tr - 7.6 - Turn-off Delay Time T d(off) - 41 - Fall Time Tf - 14 - Input Capacitance C iss - 1535 - pF VGS =0 VDS =15V f=1.0MHz Output Capacitance C oss - 60 - Reverse Transfer Capacitance C rss - 37 - Source-Drain Diode Forward On Voltage 2 V SD - - 1.2 V I S=1A, VGS =0 Continuous Source Current(Body Diode) I S - - 2.5 A VD = V G =0, V S=1.2V Pulsed Source Current( Body Diode )1 I SM - - 10 A Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width ≦300us, duty cycle ≦2%. 3.Surface mounted on 1 in2 copper pad of FR4 board; 135 ℃/W when mounted on Min. copper pad.

N & P-Ch Enhancement Mode Power MOSFET N-Ch: 2.5 A, 100 V , R DS(ON) 112 mΩΩ ΩΩ P-Ch: -2.5A, -100 V , R DS(ON) 180 mΩΩ ΩΩ Elektronische Bauelemente 18-Jun-2012 Rev. A Page 3 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. P-CHANNEL ELECTRICAL CHARACTERISTICS (T J=25 °C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BV DSS -100 - - V V GS =0, I D = -250 µA Gate Threshold Voltage V GS(th) -1 - -2.5 V V DS =V GS , I D = -250 µA Forward Transconductance g fs - 7 - S V DS = -5V, I D = -2A Gate-Source Leakage Current I GSS - - ±100 nA V GS =±20V Drain-Source Leakage Current TJ=25 °C IDSS - - -1 µA V DS = -80V, V GS =0 TJ=55°C - - -5 Static Drain-Source On-Resistance 2 R DS(ON) - - 180 m Ω VGS = -10V, I D = -2A Total Gate Charge 2 Q g - 31 - nC ID = -1.5A VDS = -80V VGS = -10V Gate-Source Charge Q gs - 6.3 - Gate-Drain (“Miller”) Change Q gd - 4.5 - Turn-on Delay Time 2 T d(on) - 12 - nS VDS = -50V VGS = -10V ID = -1A R G =3.3 Ω R D =15 Ω Rise Time Tr - 55 - Turn-off Delay Time T d(off) - 40 - Fall Time Tf - 40 - Input Capacitance C iss - 1066 - pF VGS =0 VDS = -20V f=1.0MHz Output Capacitance C oss - 365 - Reverse Transfer Capacitance C rss - 55 - Source-Drain Diode Forward On Voltage 2 V SD - - -1.2 V I S= -1A, VGS =0V Continuous Source Current(Body Diode) I S - - -2.5 A VD = V G =0V, V S= -1.2V Pulsed Source Current( Body Diode )1 I SM - - -10 A Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width ≦300us, duty cycle ≦2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 135 ℃/W when mounted on Min. copper pad.

N & P-Ch Enhancement Mode Power MOSFET N-Ch: 2.5 A, 100 V , R DS(ON) 112 mΩΩ ΩΩ P-Ch: -2.5A, -100 V , R DS(ON) 180 mΩΩ ΩΩ Elektronische Bauelemente 18-Jun-2012 Rev. A Page 4 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE (N-Ch)

N & P-Ch Enhancement Mode Power MOSFET N-Ch: 2.5 A, 100 V , R DS(ON) 112 mΩΩ ΩΩ P-Ch: -2.5A, -100 V , R DS(ON) 180 mΩΩ ΩΩ Elektronische Bauelemente 18-Jun-2012 Rev. A Page 5 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE (N-Ch)

N & P-Ch Enhancement Mode Power MOSFET N-Ch: 2.5 A, 100 V , R DS(ON) 112 mΩΩ ΩΩ P-Ch: -2.5A, -100 V , R DS(ON) 180 mΩΩ ΩΩ Elektronische Bauelemente 18-Jun-2012 Rev. A Page 6 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE (P-Ch)

N & P-Ch Enhancement Mode Power MOSFET N-Ch: 2.5 A, 100 V , R DS(ON) 112 mΩΩ ΩΩ P-Ch: -2.5A, -100 V , R DS(ON) 180 mΩΩ ΩΩ Elektronische Bauelemente 18-Jun-2012 Rev. A Page 7 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE (P-Ch)