SSG4504

SSG4504_15 SECOS | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 7

Technical content

N & P-Ch Enhancement Mode Power MOSFET N-Ch: 7.2 A, 40 V , R DS(ON) 26 mΩΩ ΩΩ P-Ch: -6.5A, -40 V , R DS(ON) 40 m ΩΩ ΩΩ 10-Jun-2014 Rev. A Page 1 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 4504SS /boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen /UIrecord/UIrecord /UIrecord/UIrecord /boxopen/boxopen /boxopen/boxopen = Date Code RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

The SSG4504 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

FEATURES

/circle6 Simple Drive Requirement /circle6 Lower On-resistance /circle6 Fast Switching Performance MARKING

PACKAGE INFORMATION

Drain-Source Voltage VDS 40 -40 V Gate-Source Voltage VGS ±20 ±20 V Continuous Drain Current 1, V GS @10V TA=70 °C ID 5.6 -5.1 A Pulsed Drain Current 2 IDM 14.5 -13 A Single Pulse Avalanche Energy 3 EAS 28 66 mJ Avalanche Current IAS 17.8 -27.2 A Total Power Dissipation 4 T C =25 °C PD 2.5 W Operating Junction and Storage Temperature Range TJ, T STG -55~150 °C Thermal Data Thermal Resistance Junction-ambient 1 Max. R θJA 85 °C / W Thermal Resistance Junction-case 1 Max. R θJC 50 °C / W Package MPQ Leader Size SOP-8 2.5K 13 inch SOP-8 A H B M D C J K F L E N G A 5.80 6. 20 H 0.35 0.4 9 B 4.80 5.0 0 J 0. 375 REF. C 3.80 4.00 K 45 ° D 0° 8° L 1.35 1. 75 E 0.40 0.90 M 0.10 0.25 F 0. 19 0. 25 N 0.25 REF. G 1.27 TYP. G 2 G 1 D 2 D 2 D 1

N & P-Ch Enhancement Mode Power MOSFET N-Ch: 7.2 A, 40 V , R DS(ON) 26 mΩΩ ΩΩ P-Ch: -6.5A, -40 V , R DS(ON) 40 m ΩΩ ΩΩ 10-Jun-2014 Rev. A Page 2 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. N-CHANNEL ELECTRICAL CHARACTERISTICS (T J=25 °C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BV DSS 40 - - V V GS =0, I D =250uA Breakdown Voltage Temperature Coefficient △BV DSS /△Tj - 0.034 - V / °C Reference to 25 °C , ID =1mA Gate Threshold Voltage V GS(th) 1.0 - 2.5 V V DS =V GS , I D =250uA Forward Transconductance g fs - 14 - S V DS =5V, I D =6A Gate-Source Leakage Current I GSS - - ±100 nA V GS = ±20V TJ=25 °C - - 1 Drain-Source Leakage Current TJ=55°C IDSS - - 5 uA V DS =32V, V GS =0 - - 26 V GS =10V, I D =6A Static Drain-Source On-Resistance 2 R DS(ON) - - 35 m Ω VGS =4.5V, I D =4A Total Gate Charge Q g - 5.5 - Gate-Source Charge Q gs - 1.25 - Gate-Drain (“Miller”) Change Q gd - 2.5 - nC ID =6A VDS =20V VGS =4.5V Turn-on Delay Time T d(on) - 8.9 - Rise Time Tr - 2.2 - Turn-off Delay Time T d(off) - 41 - Fall Time Tf - 2.7 - nS VDD =20V VGS =10V ID =1A R G =3.3 Ω R D =20 Ω Input Capacitance C iss - 593 - Output Capacitance C oss - 76 - Reverse Transfer Capacitance C rss - 56 - pF VGS =0 VDS =15V f=1.0MHz Guaranteed Avalanche Characteristics Single Pulse Avalanche Energy 5 EAS 9 - - mJ V DD =25V, L=0.1mH, IAS =10A Source-Drain Diode Forward On Voltage 2 V SD - - 1.2 V IS=1A, VGS =0, T j= 25 °C Continuous Source Current 1,6 I S - - 7.2 A Pulsed Source Curren 2,6 I SM - - 14.5 A VD = V G =0, Force Current Notes: 1. Surface mounted on a 1 inch 2 FR-4 board with 20Z copper. 135° C/ W when mounted on Min. copper pad. 2. The date tested by pulse width ≦300us, duty cycle ≦2%. 4. The power dissipation is limited by 150° C junction temperature. 5. The Min. value is 100% EAS tested guarantee. 6. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.

N & P-Ch Enhancement Mode Power MOSFET N-Ch: 7.2 A, 40 V , R DS(ON) 26 mΩΩ ΩΩ P-Ch: -6.5A, -40 V , R DS(ON) 40 m ΩΩ ΩΩ 10-Jun-2014 Rev. A Page 3 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. P-CHANNEL ELECTRICAL CHARACTERISTICS (T J=25 °C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BV DSS -40 - - V V GS =0, I D = -250uA Breakdown Voltage Temperature Coefficient △BV DSS /△Tj - -0.012 - V / °C Reference to 25 °C , ID = -1mA Gate Threshold Voltage V GS(th) -1 - -2.5 V V DS =V GS , I D = -250uA Forward Transconductance g fs - 12 - S V DS = -5V, I D = -6A Gate-Source Leakage Current I GSS - - ±100 nA V GS =±20V TJ=25 °C - - -1 Drain-Source Leakage Current TJ=55°C IDSS - - -5 uA V DS = -32V, V GS =0 - - 40 V GS = -10V, I D = -6A Static Drain-Source On-Resistance 2 R DS(ON) - - 65 m Ω VGS = -4.5V, I D = -4A Total Gate Charge Q g - 9 - Gate-Source Charge Q gs - 2.54 - Gate-Drain (“Miller”) Change Q gd - 3.1 - nC ID = -6A VDS = -20V VGS = -4.5V Turn-on Delay Time T d(on) - 19.2 - Rise Time Tr - 12.8 - Turn-off Delay Time T d(off) - 48.6 - Fall Time Tf - 4.6 - nS VDS = -15V VGS = -10V ID = -1A R G =3.3 Ω R D =20 Ω Input Capacitance C iss - 1004 - Output Capacitance C oss - 108 - Reverse Transfer Capacitance C rss - 80 - pF VGS =0 VDS = -15V f=1.0MHz Guaranteed Avalanche Characteristics Single Pulse Avalanche Energy 5 EAS 20 - - mJ V DD = -25V, L=0.1mH, IAS = -15A Source-Drain Diode Forward On Voltage 2 V SD - - -1 V IS= -1A, VGS =0V, T j= 25 °C Continuous Source Current 1,6 I S - - -6.5 A Pulsed Source Curren 2,6 I SM - - -13 A VD = V G =0, Force Current Notes: 1. Surface mounted on a 1 inch 2 FR-4 board with 20Z copper. 135° C/ W when mounted on Min. copper pad. 2. The date tested by pulse width ≦300us, duty cycle ≦2%. 4. The power dissipation is limited by 150° C junction temperature. 5. The Min. value is 100% EAS tested guarantee. 6. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.

N & P-Ch Enhancement Mode Power MOSFET N-Ch: 7.2 A, 40 V , R DS(ON) 26 mΩΩ ΩΩ P-Ch: -6.5A, -40 V , R DS(ON) 40 m ΩΩ ΩΩ 10-Jun-2014 Rev. A Page 4 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE (N-Ch)

N & P-Ch Enhancement Mode Power MOSFET N-Ch: 7.2 A, 40 V , R DS(ON) 26 mΩΩ ΩΩ P-Ch: -6.5A, -40 V , R DS(ON) 40 m ΩΩ ΩΩ 10-Jun-2014 Rev. A Page 5 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE (N-Ch)

N & P-Ch Enhancement Mode Power MOSFET N-Ch: 7.2 A, 40 V , R DS(ON) 26 mΩΩ ΩΩ P-Ch: -6.5A, -40 V , R DS(ON) 40 m ΩΩ ΩΩ 10-Jun-2014 Rev. A Page 6 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE (P-Ch)

N & P-Ch Enhancement Mode Power MOSFET N-Ch: 7.2 A, 40 V , R DS(ON) 26 mΩΩ ΩΩ P-Ch: -6.5A, -40 V , R DS(ON) 40 m ΩΩ ΩΩ 10-Jun-2014 Rev. A Page 7 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE (P-Ch)