SSG4503A

SSG4503A SECOS | Alldatasheet

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• Simple Drive Requirement * Lower On-Resistance P Channel -7.1A, -30V,RDS(ON) 28m Ω Ω http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 0.25 Dimensions in millimeters 6.20 5.80 1.27Typ.0.35 0.49 4.80 5.00 0.10~0.25 1.35 1.75 0.40 0.90 0.19 0.25 3.80 4.00

0.375 REF

o o o S1 G1 S2 G2 D1 D1 D2 D2 4503ASS Date Code 578 2 3 4 SOP-8 * Fast Switching Performance 01-Jun-2002 Rev. A Page 1 of 7 The SOP-8 package is universally preferred for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters. T otal Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Drain-Source Voltage Gate-Source Voltage 8.3 6.7 -5.7 30 -30 -7.1 -30 20± ± Thermal Resistance Junction-ambient A V V A A ID@TA=70 /W C W / C C W VDS VGS ID@TA=25 IDM PD@TA=25 Tj, Tstg Rthj-a 2.0 0.016 -55~+150 62.5 o o o C o C o Max. Absolute Maximum Ratings C o Continuous Drain Current Continuous Drain Current Pulsed Drain Current Parameter Symbol Ratings Unit Thermal Data Parameter Symbol Ratings Unit RoHS Compliant Product

Electrical Characteristics N Channel( Tj=25 C Unless otherwise specified) Total Gate Charge RDS(ON) Parameter Symbol Max.Typ. Test ConditionMin. Unit Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 ) Static Drain-Source On-Resistance Drain-Source Leakage Current (Tj=70 ) Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance BVDSS BVDS/ Tj VGS(th) IGSS IDSS Crss Qg Qgs Qgd Td(ON) Td(Off) Tr Ciss Coss Tf 0.02 1.0 100 1450 320 230 V V nA uA uA m nC nS pF Ω VGS=0V VDS=25V f=1.0MHz VDD=15V ID=1 A VGS=10 V RG=3.3 RD=15 Ω Ω ID=8 A VDS=24V VGS=4.5V VGS=10V, ID=8A VGS=4.5V, ID=5A VGS=0V, ID=250uA VGS= 20V± VDS=30V,VGS=0 VDS=24V,VGS=0 VDS=VGS, ID=250uA Reference to 25 , ID=1mA Forward Transconductance Gfs S13 VDS=10V, ID=8A_ o Co Co C o C o 2230 3.0 Parameter Symbol Max.Typ. Test ConditionMin. Unit Forward On Voltage Reverse Recovery Time VSD Trr _ _ IS=1.7A, VGS=0V IS=8A,V GS=0V dl/dt=100A/us V nS 1.2 Reverse Recovery Charge Qrr _ _ nC18 Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width 300us, dutycycle 2%.≦≦ 3.Surface mounted on 1 inch2 copper pad of FR4 board;135 when mounted on min. copper pad.°C/W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 7 Elektronische Bauelemente SSG4503A N Channel 8.3A, 30V,RDS(ON) 20m Enhancement Mode Power Mos.FET P Channel -7.1A, -30V,RDS(ON) 28m Ω Ω Source-Drain Diode

Electrical Characteristics P-Channel( Tj=25 C Unless otherwise specified) Total Gate Charge RDS(ON) Parameter Symbol Max.Typ. Test ConditionMin. Unit Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 ) Static Drain-Source On-Resistance Drain-Source Leakage Current (Tj=70 ) Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance BVDSS BVDS/ Tj VGS(th) IGSS IDSS Crss Qg Qgs Qgd Td(ON) Td(Off) Tr Ciss Coss Tf -30 -0.01 -1.0 100 -25 1170 430 340 V V nA uA uA m nC nS pF Ω VGS=0V VDS=-25V f=1.0MHz VDS=-15V ID=-1A VGS=-10V RG=3.3 RD=15 Ω Ω ID=-7A VDS=-24V VGS=-4.5V VGS=-10V, ID=-7A VGS=-4.5V, ID=-4A VGS=0V, ID=-250uA VGS= 20V± VDS=-30V,VGS=0 VDS=-24V,VGS=0 VDS=VGS, ID=-250uA Reference to 25 , ID=-1mA Forward Transconductance Gfs S11 VDS=-10V, ID=-7A_ Co Co C o Co 1870 -3.0 o http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 7 Source-Drain Diode Parameter Symbol Max.Typ. Test ConditionMin. Unit Forward On Voltage Reverse Recovery Time VSD Trr _ _ IS=-1.7A, VGS=0V IS=-7A,VGS=0V dl/dt=100A/us V nS -1.2 Reverse Recovery Charge Qrr _ _ nC33 Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width 300us, dutycycle 2%.≦≦ 3.Surface mounted on 1 inch2 copper pad of FR4 board;135 when mounted on min. copper pad.°C/W Elektronische Bauelemente SSG4503A N Channel 8.3A, 30V,RDS(ON) 20m Enhancement Mode Power Mos.FET P Channel -7.1A, -30V,RDS(ON) 28m Ω Ω

01-Jun-2002 Rev. A Page 4 of 7 Characteristics Curve N-Channel http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode Elektronische Bauelemente SSG4503A N Channel 8.3A, 30V,RDS(ON) 20m Enhancement Mode Power Mos.FET P Channel -7.1A, -30V,RDS(ON) 28m Ω Ω

01-Jun-2002 Rev. A Page 5 of 7 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual N-Channel Fig 10. Effective Transient Thermal ImpedanceFig 9. Maximum Safe Operating Area Fig 8. Typical Capacitance CharacteristicsFig 7. Gate Charge Characteristics Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Elektronische Bauelemente SSG4503A N Channel 8.3A, 30V,RDS(ON) 20m Enhancement Mode Power Mos.FET P Channel -7.1A, -30V,RDS(ON) 28m Ω Ω

http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 6 of 7 tage does not sag below the minimum dropout voltage during the load V higher than Vout in order for the device to

Description

Typically a large storage capacitor is connected from this pin to ground to insure that the input 1.3V or open= output enable. NC P-Channel Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature Elektronische Bauelemente SSG4503A N Channel 8.3A, 30V,RDS(ON) 20m Enhancement Mode Power Mos.FET P Channel -7.1A, -30V,RDS(ON) 28m Ω Ω

01-Jun-2002 Rev. A Page 7 of 7 h tp://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual P-Channel Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Elektronische Bauelemente SSG4503A N Channel 8.3A, 30V,RDS(ON) 20m Enhancement Mode Power Mos.FET P Channel -7.1A, -30V,RDS(ON) 28m Ω Ω