SSG4501-C

SSG4501-C SECOS | Alldatasheet

Document overview

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Technical content

N & P-Ch Enhancement Mode Power MOSFET N-Ch: 7A, 30 V , R DS(ON) 28mΩ P-Ch: -5.3A, -30 V , R DS(ON) 50mΩ Elektronische Bauelemente 06-Dec-2018 Rev. B Page 1 of 9 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 4501SS /boxopen/boxopen/boxopen/boxopen /UIrecord /boxopen = Lot Code RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

The SSG4501-C provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters.

FEATURES

/circle6 Simple Drive Requirement /circle6 Lower On-resistance /circle6 Fast Switching Performance MARKING

PACKAGE INFORMATION

Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VGS ±20 ±20 V Continuous Drain Current 3 TA=25° C ID 7 -5.3 A TA=100° C 5.8 -4.7 A Pulsed Drain Current 1 IDM 20 -20 A Total Power Dissipation T A=25° C P D 2 W Operating Junction and Storage Temperature Range TJ, T STG -55~150 ° C Thermal Data Thermal Resistance Junction-ambient 3 (Max.) R θJA 62.5 ° C / W Package MPQ Leader Size SOP-8 2.5K 13 inch Part Number Type SSG4501-C Lead (Pb)-free and Halogen-free SOP-8 A H B M D C J K F L E N G G 2 G 1 D 2 D 2 D 1 REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 5. 79 6. 20 H 0.33 0.51 B 4.70 5. 11 J 0. 375 REF. C 3.80 4.00 K 45 °REF. D 0° 8° L 1.3 1. 75 2 E 0.40 1.27 M 0 0.25 F 0. 10 0. 25 N 0.25 REF. G 1.27 TYP.

N & P-Ch Enhancement Mode Power MOSFET N-Ch: 7A, 30 V , R DS(ON) 28mΩ P-Ch: -5.3A, -30 V , R DS(ON) 50mΩ Elektronische Bauelemente 06-Dec-2018 Rev. B Page 2 of 9 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. N-CHANNEL ELECTRICAL CHARACTERISTICS (T J=25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BV DSS 30 - - V V GS =0, I D =250uA Breakdown Voltage Temp. Coefficient △BV DS /△TJ - 0.02 - V/° C Reference to 25° C , I D =1mA Gate Threshold Voltage V GS(th) 1.0 - 3 V V DS =V GS , I D =250uA Forward Transfer conductance g fs - 13 - S V DS =10V, I D =7A Gate-Source Leakage Current I GSS - - ±100 nA V GS = ±20V Drain-Source Leakage Current TJ=25° C IDSS - - 1 uA VDS =30V, V GS =0 TJ=75° C - - 25 V DS =24V, V GS =0 Static Drain-Source On-Resistance 2 R DS(ON) - - 28 m Ω VGS =10V, I D =7A - - 42 V GS =4.5V, I D =5A Total Gate Charge Q g - 8.4 - nC ID =7A VDS =24V VGS =4.5V Gate-Source Charge Q gs - 2.1 - Gate-Drain (“Miller”) Change Q gd - 4.7 - Turn-on Delay Time 2 T d(on) - 6 - nS VDD =15V VGS =10V ID =1A R G =3.3 Ω R D =15 Ω Rise Time Tr - 5.2 - Turn-off Delay Time T d(off) - 18.8 - Fall Time Tf - 4.4 - Input Capacitance C iss - 645 - pF VGS =0 VDS =25V f=1.0MHz Output Capacitance C oss - 150 - Reverse Transfer Capacitance C rss - 95 - Source-Drain Diode Forward On Voltage 2 V SD - - 1.2 V I S=7A, V GS =0, T J=25° C Continuous Source Current (Body Diode) IS - - 1.67 A V D =V G =0V,V S=1.2V Notes: 1. Pulse width limited by Max. Junction temperature. 2. Pulse width /uni2266 300us , duty cycle /uni2266 2% 3. Surface mounted on 1 inch 2 copper pad of FR4 board; 135 ° C/W when mounted on min. copper pad.

N & P-Ch Enhancement Mode Power MOSFET N-Ch: 7A, 30 V , R DS(ON) 28mΩ P-Ch: -5.3A, -30 V , R DS(ON) 50mΩ Elektronische Bauelemente 06-Dec-2018 Rev. B Page 3 of 9 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. P-CHANNEL ELECTRICAL CHARACTERISTICS (T J=25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BV DSS -30 - - V V GS =0, I D = -250uA Breakdown Voltage Temp. Coefficient △BV DS /△TJ - -0.028 - V/° C Reference to 25° C , I D = -1mA Gate Threshold Voltage V GS(th) -1 - -3 V V DS =V GS , I D = -250uA Forward Transfer conductance g fs - 8.5 - S V DS = -10V, I D = -5.3A Gate-Source Leakage Current I GSS - - ±100 nA V GS =±20V Drain-Source Leakage Current TJ=25° C IDSS - - -1 uA VDS = -30V, V GS =0 TJ=75° C - - -25 V DS = -24V, V GS =0 Static Drain-Source On-Resistance 2 R DS(ON) - - 50 m Ω VGS = -10V, I D = -5.3A Total Gate Charge Q g - 20 - nC ID = -5.3A VDS = -15V VGS = -10V Gate-Source Charge Q gs - 3.5 - Gate-Drain (“Miller”) Change Q gd - 2 - Turn-on Delay Time T d(on) - 12 - nS VDS = -15V VGS = -10V ID = -1A R G =6Ω R D =15 Ω Rise Time Tr - 20 - Turn-off Delay Time T d(off) - 45 - Fall Time Tf - 27 - Input Capacitance C iss - 790 - pF VGS =0 VDS = -15V f=1.0MHz Output Capacitance C oss - 440 - Reverse Transfer Capacitance C rss - 120 - Source-Drain Diode Forward On Voltage 2 V SD - - -1.2 V I S= -2.6A, V GS =0V, T J=25° C Continuous Source Current (Body Diode) IS - - -1.67 A V D =V G =0V,V S= -1.2V Notes: 1. Pulse width limited by Max. Junction temperature. 2. Pulse width /uni2266 300us , duty cycle /uni2266 2% 3. Surface mounted on 1 inch 2 copper pad of FR4 board; 135 ° C/W when mounted on min. copper pad.

N & P-Ch Enhancement Mode Power MOSFET N-Ch: 7A, 30 V , R DS(ON) 28mΩ P-Ch: -5.3A, -30 V , R DS(ON) 50mΩ Elektronische Bauelemente 06-Dec-2018 Rev. B Page 4 of 9 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE (N-Ch)

N & P-Ch Enhancement Mode Power MOSFET N-Ch: 7A, 30 V , R DS(ON) 28mΩ P-Ch: -5.3A, -30 V , R DS(ON) 50mΩ Elektronische Bauelemente 06-Dec-2018 Rev. B Page 5 of 9 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE (N-Ch)

N & P-Ch Enhancement Mode Power MOSFET N-Ch: 7A, 30 V , R DS(ON) 28mΩ P-Ch: -5.3A, -30 V , R DS(ON) 50mΩ Elektronische Bauelemente 06-Dec-2018 Rev. B Page 6 of 9 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE (N-Ch)

N & P-Ch Enhancement Mode Power MOSFET N-Ch: 7A, 30 V , R DS(ON) 28mΩ P-Ch: -5.3A, -30 V , R DS(ON) 50mΩ Elektronische Bauelemente 06-Dec-2018 Rev. B Page 7 of 9 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE (P-Ch)

N & P-Ch Enhancement Mode Power MOSFET N-Ch: 7A, 30 V , R DS(ON) 28mΩ P-Ch: -5.3A, -30 V , R DS(ON) 50mΩ Elektronische Bauelemente 06-Dec-2018 Rev. B Page 8 of 9 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE (P-Ch)

N & P-Ch Enhancement Mode Power MOSFET N-Ch: 7A, 30 V , R DS(ON) 28mΩ P-Ch: -5.3A, -30 V , R DS(ON) 50mΩ Elektronische Bauelemente 06-Dec-2018 Rev. B Page 9 of 9 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE (P-Ch)