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Technical content

7.1 A, 80 V , RDS(ON) 41 m

N-Ch Enhancement Mode Power MOSFET 17-Dec-2010 Rev. C Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A H B M D C J K F L E N G RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

FEATURES

 Low RDS(on) trench technology.  Low thermal impedance.  Fast switching speed.

APPLICATIONS

 White LED boost converters  Automotive Systems  Industrial DC/DC Conversion Circuits

PACKAGE INFORMATION

SOP-8 2.5K 13’ inch MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage V DS 80 V Gate-Source Voltage V GS ±20 V ID @ TA = 25°C 7.1 A Continuous Drain Current 1 ID @ TA = 70°C 6 A Pulsed Drain Current 2 I DM 50 A Continuous Source Current (Diode Conduction) 1 I S 3.8 A PD @ TA = 25°C 3.1 W Total Power Dissipation 1 PD @ TA = 70°C 2.2 W Operating Junction & Storage Temperature Range T J, TSTG -55 ~ 150 °C Thermal Resistance Ratings t≦10 sec 40 °C / W Thermal Resistance Junction-ambient (Max.) 1 Steady State RθJA 80 °C / W Notes 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. SOP-8 A 5.80 6.20 H 0.35 0.49 B 4.80 5.00 J 0.375 REF. C 3.80 4.00 K 45 ° D0 ° 8 ° L 1.35 1.75 E 0.40 0.90 M 0.10 0.25 F 0.19 0.25 N 0.25 REF. G 1.27 TYP. G S S S D D D D

N-Ch Enhancement Mode Power MOSFET 17-Dec-2010 Rev. C Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Gate Threshold Voltage V GS(th) 1 - - V V DS= VGS, ID=-250μA Gate-Body Leakage Current I GSS - - ±10 μA V DS= 0V, VGS= ±20V - - 1 V DS=64V, VGS=0V Zero Gate Voltage Drain Current I DSS - - 10 μA VDS=64V, VGS=0V, TJ=55°C On-State Drain Current1 I D(on) 20 - - A V DS=5V, VGS=10V - - 41 V GS=10V, ID=5.4A Drain-Source On-Resistance1 R DS(ON) - - 57 mΩ VGS=4.5V, ID=4.6A Forward Transconductance1 g fs - 20 - S V DS=15V, ID=5.4A Diode Forward Voltage V SD - 0.76 - V I S=2A, VGS=0V Dynamic 2 Total Gate Charge Q g - 19.5 - Gate-Source Charge Q gs - 4.5 - Gate-Drain Charge Q gd - 10 - nC ID=5.4A VDS=40V VGS=4.5V Turn-On Delay Time T d(on) - 12.8 - Rise Time T r - 24 - Turn-Off Delay Time T d(off) - 52.3 - Fall Time T f - 46 - nS VDD=40V ID=5.4A VGEN=10V RL=7.5Ω RGEN=6Ω Input Capacitance C ISS - 1522 - Output Capacitance C OSS - 129 - Reverse Transfer Capacitance C RSS - 87 - pF VDS=15V VGS=0V f=1Mhz Notes 1. Pulse test ：PW ≦ 300 μs duty cycle ≦ 2%. 2. Guaranteed by design, not s ubject to production testing.

N-Ch Enhancement Mode Power MOSFET 17-Dec-2010 Rev. C Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TYPICAL ELECTRICAL CHARACTERISTICS CURVE

N-Ch Enhancement Mode Power MOSFET 17-Dec-2010 Rev. C Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TYPICAL ELECTRICAL CHARACTERISTICS CURVE