SSG4407PE SECOS | Alldatasheet

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Technical content

-15 A, -30 V , R DS(ON) 9 mΩΩ ΩΩ P-Channel Mode Power MOSFET Elektronische Bauelemente 11-Oct-2012 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A H B M D C J K F L E N G RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low R DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

FEATURES

/circle6 Low R DS(on) provides higher efficiency and extends battery life. /circle6 Low thermal impedance copper leadframe SOP-8 saves board space. /circle6 Fast switching speed. /circle6 High performance trench technology.

PACKAGE INFORMATION

SOP-8 2.5K 13’ inch MAXIMUM RATINGS (TA=25 °C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current 1 TA = 25° C ID -15 A TA = 70° C -11 A Pulsed Drain Current 2 IDM ±50 A Continuous Source Current (Diode Conduction) 1 I S -2.1 A Total Power Dissipation 1 TA = 25° C PD 3.1 W TA = 70° C 2.3 W Operating Junction & Storage Temperature Range T J, T STG -55 ~ 150 ° C Thermal Resistance Ratings Thermal Resistance Junction-Case (Max.) 1 t ≦5 sec R θJC 25 ° C / W Thermal Resistance Junction-Ambient (Max.) 1 t ≦5 sec R θJA 50 ° C / W Notes: 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. SOP-8 REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 5.80 6. 20 H 0.35 0.4 9 B 4.80 5.0 0 J 0. 375 REF. C 3.80 4.00 K 45 ° D 0° 8° L 1.35 1. 75 E 0.40 0.90 M 0.10 0.25 F 0. 19 0. 25 N 0.25 REF. G 1.27 TYP. D D S S G S D D ESD Protection Diode

-15 A, -30 V , R DS(ON) 9 mΩΩ ΩΩ P-Channel Mode Power MOSFET Elektronische Bauelemente 11-Oct-2012 Rev. A Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS

(T A=25 °C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Gate Threshold Voltage V GS(th) -1 - - V V DS =V GS , I D = -250 µA Gate-Body Leakage Current I GSS - - ±10 µA VDS =0, VGS = ±20V Zero Gate Voltage Drain Current I DSS - - -1 µA VDS = -24V, V GS = 0 - - -5 V DS = -24V, V GS = 0V, T J= 55° C On-State Drain Current 1 I D(on) -50 - - A V DS = -5V, V GS = -10V Drain-Source On-Resistance 1 R DS(ON) - - 9 m Ω VGS = -10V, I D = -1A Forward Transconductance 1 g fs - 44 - S V DS = -5V, I D = -1A Diode Forward Voltage V SD - -0.7 - V I S=1A, V GS = 0V Dynamic 2 Total Gate Charge Q g - 50 - nC ID = -1A VDS = -15V VGS = -4.5V Gate-Source Charge Q gs - 10 - Gate-Drain Charge Q gd - 20 - Turn-On Delay Time T d(on) - 10 - nS VDD = -15V ID = -1A VGEN = -10V R L= 6Ω Rise Time T r - 30 - Turn-Off Delay Time T d(off) - 100 - Fall Time T f - 50 - Notes: 1 Pulse test ：PW ≦ 300 µs duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing.