SSG4407J-C SECOS | Alldatasheet
Document overview
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Technical content
-12A, -30V , R DS(ON) 13mΩ P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 30-Oct-2017 Rev. D Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A H B M D C J K F L E N G RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SSG4407J-C uses advanced trench technology to provide excellent on-resistance, low gate charge and operation with gate voltages as low as 2.5V. The device is suitable for use as a load switch or in PWM applications. It may be used in a common drain arrangement to from a bidirectional blocking switch.
FEATURES
/circle6 Simple Drive Requirement /circle6 Lower On-resistance /circle6 Low Gate Charge MARKING
PACKAGE INFORMATION
(TA=25° C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID -12 A Pulsed Drain Current IDM -48 A Single Pulse Avalanche Energy 1 EAS 115 mJ Total Power Dissipation PD 1.4 W Thermal Resistance Junction-Ambient R θJA 89 ° C/W Lead Temperature for Soldering Purposes @1/8’’ from case for 10s TL 260 ° C Operating Junction & Storage Temperature Range T J, T STG 150, -55~150 ° C Note: 1. E AS condition: VDD = -50V, L=0.5mH, R G =25 Ω, Starting T J=25° C. Part Number Type SSG4407J-C Lead (Pb)-free and Halogen-free S S S G D D D D Q4407 /box4/box4 /box4/box4 /box4/box4 /box4/box4 Date Code REF. Millimeter REF. Millimeter Min. Max. Min. Max . A 5. 79 6. 20 H 0.33 0.51 B 4.70 5. 11 J 0. 375 REF. C 3.80 4.00 K 45 °REF. D 0° 8° L 1.3 1. 75 2 E 0.40 1.27 M 0 0.25 F 0. 10 0. 25 N 0.25 REF. G 1.27 TYP. SOP-8
-12A, -30V , R DS(ON) 13mΩ P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 30-Oct-2017 Rev. D Page 2 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T A=25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test conditions Drain-Source Breakdown Voltage BV DSS -30 - - V V GS =0, I D = -250 µA Drain-Source Leakage Current I DSS - - -1 µA V DS = -30V, VGS =0 Gate-Body Leakage Current I GSS - - ±100 nA V DS =0, VGS = ±20V Gate-Threshold Voltage 1 V GS(th) -1 -1.5 -2.2 V V DS =V GS , I D = -250 µA Drain-Source On-Resistance 1 R DS(ON) - 7.8 13 m Ω VGS = -10V, I D = -12A - 9 17 V GS = -6V, I D = -10A Forward Transfer Conductance 1 g fs 25 - - S V DS = -5V, I D = -15A Total Gate Charge Q g - 48 - nC ID = -10A VDS = -15V VGS = -10V Gate-Source Charge Q gs - 12 - Gate-Drain (“Miller”) Charge Q gd - 14 - Turn-On Delay Time T d(on) - 15 - nS VDD = -15V VGS = -10V R G =3Ω R L=1.25 Ω Rise Time T r - 11 - Turn-Off Delay Time T d(off) - 44 - Fall Time T f - 21 - Input Capacitance C iss - 2900 - pF VGS =0 VDS = -15V f=1MHz Output Capacitance C oss - 410 - Reverse Transfer Capacitance C rss - 280 - Gate Resistance R g - - 3.6 Ω V DS =0, VGS =0, f=1MHz Source-Drain Diode Characteristics Forward On Voltage 1 V SD - - -1.2 V I S= -2A, V GS =0 Continuous Source Current I S - - -15 A Pulsed Source Current I SM - - -60 Note: 1. Pulse Test: Pulse Width ≦300 µs, duty cycle ≦2%.
-12A, -30V , R DS(ON) 13mΩ P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 30-Oct-2017 Rev. D Page 3 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTICS CURVE