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Technical content

6.7 A, 60 V , RDS(ON) 38 m

N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 06-Jan-2011 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A H B M D C J K F L E N G RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

FEATURES

 Low RDS(on) provides higher efficiency and extends battery life.  Low thermal impedance copper leadframe SOP-8 saves board space.  Fast switching speed.  High performance trench technology.

PACKAGE INFORMATION

SOP-8 2.5K 13’ inch MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage V DS 60 V Gate-Source Voltage V GS ±20 V Continuous Drain Current 1 ID @ TA = 25°C 6.7 A ID @ TA = 70°C 5.8 A Pulsed Drain Current 2 I DM 25 A Continuous Source Current (Diode Conduction) 1 I S 2 A Total Power Dissipation 1 PD @ TA = 25°C 3.1 W PD @ TA = 70°C 2 W Operating Junction & Storage Temperature Range T J, TSTG -55 ~ 150 °C THERMAL RESISTANCE RATINGS Maximum Junction to Ambient a t ≦ 10 sec RθJA 40 °C / W Steady State 80 °C / W Notes: 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. SOP-8 REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 5.80 6.20 H 0.35 0.49 B 4.80 5.00 J 0.375 REF. C 3.80 4.00 K 45 ° D 0 ° 8 ° L 1.35 1.75 E 0.40 0.90 M 0.10 0.25 F 0.19 0.25 N 0.25 REF. G 1.27 TYP. G S S S D D D D

N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 06-Jan-2011 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test conditions Static Gate-Threshold Voltage V GS(th) 1 - - V V DS= VGS, ID= 250μA Gate-Body Leakage I GSS - - ±100 nA V DS= 0V, VGS= 20V Zero Gate Voltage Drain Current I DSS - - 1 μA V DS= 60V, VGS= 0V - - 10 μA V DS= 60V, VGS= 0V, TJ= 55°C On-State Drain Current 1 I D(on) 20 - - A V DS= 5V, VGS= 10V Drain-Source On-Resistance 1 R DS(ON) - - 38 mΩ VGS= 10V, ID= 6.7A - - 50 V GS= 4.5V, ID= 5.9A Forward Transconductance 1 g fs - 11 - S V DS= 15V, ID= 5.2A Diode Forward Voltage V SD - - 1.2 V I S= 2.0A, VGS= 0V Dynamic 2 Total Gate Charge Q g - 8.5 - nC ID= 6.7A VDS= 30V VGS= 4.5V Gate-Source Charge Q gs - 3.3 - Gate-Drain Charge Q gd - 4.0 - Input Capacitance C ISS - 1456 - pF f = 1 MHz VDS= 30V VGS= 0V Output Capacitance C OSS - 172 - Reverse Transfer Capacitance C RSS - 97 - Turn-On Delay Time T d(on) - 18 - nS VDD= 30V ID= 1A VGEN= 10V RL= 30Ω Rise Time T r - 59 - Turn-Off Delay Time T d(off) - 37 - Fall Time T f - 9 - Notes: 1 Pulse test ：PW ≦ 300 μs duty cycle ≦ 2%. 2 Guaranteed by design, not s ubject to production testing.

N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 06-Jan-2011 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTICS CURVE

N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 06-Jan-2011 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTICS CURVE