SSG4396N

SSG4396N_15 SECOS | Alldatasheet

Document overview

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• PDF pages: 4

Technical content

4.4A, 150V , R DS(ON) 110mΩΩ ΩΩ N-Ch Enhancement Mode Power MOSFET 13-Nov-2013 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A H B M D C J K F L E N G RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low R DS(on) and to ensure minimal power loss and heat dissipation.

FEATURES

/circle6 Low R DS(on) provides higher efficiency and extends battery life. /circle6 Low thermal impedance copper leadframe SOP-8 saves board space. /circle6 Fast switching speed. /circle6 High performance trench technology. APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

PACKAGE INFORMATION

SOP-8 2.5K 13’ inch ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS ±20 V TA = 25° C 4.4 Continuous Drain Current 1 TA = 70° C ID 3.7 A Pulsed Drain Current 2 IDM 20 A Continuous Source Current (Diode Conduction) 1 I S 4.6 A TA = 25° C 3.1 Total Power Dissipation 1 TA = 70° C PD 2.2 W Operating Junction & Storage Temperature Range T J, T STG -55 ~ 150 ° C THERMAL RESISTANCE RATINGS t ≦ 10 sec 40 ° C / W Maximum Junction to Ambient 1 Steady State R θJA 80 ° C / W Notes: 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. SOP-8 A 5.80 6. 20 H 0.35 0.4 9 B 4.80 5.0 0 J 0. 375 REF. C 3.80 4.00 K 45 ° D 0° 8° L 1.35 1. 75 E 0.40 0.90 M 0.10 0.25 F 0. 19 0. 25 N 0.25 REF. G 1.27 TYP. G S S S D D D D

4.4A, 150V , R DS(ON) 110mΩΩ ΩΩ N-Ch Enhancement Mode Power MOSFET 13-Nov-2013 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS

(T A = 25 °C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test conditions Static Gate-Threshold Voltage V GS(th) 1 - - V V DS =V GS , I D =250µA Gate-Body Leakage I GSS - - ±100 nA V DS =0, VGS =±20V - - 1 V DS =120V, V GS =0 Zero Gate Voltage Drain Current I DSS - - 25 µA VDS =120V, V GS =0, T J= 55° C On-State Drain Current 1 I D(on) 6.6 - - A V DS =5V, V GS =10V - - 110 V GS =10V, I D =3.5A Drain-Source On-Resistance 1 R DS(ON) - - 115 m Ω VGS =5.5V, I D =2.8A Forward Transconductance 1 g fs - 35 - S V DS =15V, I D =3.5A Diode Forward Voltage V SD - 0.72 - V I S=2.3A, V GS =0 Dynamic 2 Total Gate Charge Q g - 24 - Gate-Source Charge Q gs - 6.7 - Gate-Drain Charge Q gd - 8.9 - nC ID =3.5A VDS =75V VGS =5.5V Turn-On Delay Time T d(on) - 12 - Rise Time T r - 14 - Turn-Off Delay Time T d(off) - 76 - Fall Time T f - 30 - nS VDD =75V ID =3.5A VGEN =10V R L= 21.5 Ω R GEN =6 Ω Input Capacitance C iss - 2599 - Output Capacitance C oss - 167 - Reverse Transfer Capacitance C rss - 90 - pF VDS =15V VGS =0V f=1MHz Notes: 1 Pulse test ：PW ≦ 300 µs duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing.

4.4A, 150V , R DS(ON) 110mΩΩ ΩΩ N-Ch Enhancement Mode Power MOSFET 13-Nov-2013 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE

4.4A, 150V , R DS(ON) 110mΩΩ ΩΩ N-Ch Enhancement Mode Power MOSFET 13-Nov-2013 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE