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2.9A, 150V , RDS(ON) 255 m N-Ch Enhancement Mode Power MOSFET 12-May-2011 Rev. B Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A H B M D C J K F L E N G RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.

FEATURES

 Low RDS(on) provides higher efficiency and extends battery life.  Low thermal impedance copper leadframe SOP-8 saves board space.  Fast switching speed.  High performance trench technology. APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

PACKAGE INFORMATION

SOP-8 2.5K 13’ inch MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage V DS 150 V Gate-Source Voltage V GS ±20 V TA = 25°C 2.9 A Continuous Drain Current 1 TA = 70°C ID 2.4 A Pulsed Drain Current 2 I DM 20 A Continuous Source Current (Diode Conduction) 1 I S 4 A TA = 25°C 3.1 W Total Power Dissipation 1 TA = 70°C PD 2.2 W Operating Junction & Storage Temperature Range T J, TSTG -55~150 °C THERMAL RESISTANCE RATINGS Maximum Junction to Case 1 t ≦ 5 sec R θJC 40 °C / W Maximum Junction to Ambient 1 t ≦ 5 sec R θJA 80 °C / W Notes: 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. SOP-8 A 5.80 6.20 H 0.35 0.49 B 4.80 5.00 J 0.375 REF. C 3.80 4.00 K 45 ° D 0 ° 8 ° L 1.35 1.75 E 0.40 0.90 M 0.10 0.25 F 0.19 0.25 N 0.25 REF. G 1.27 TYP. G S S S D D D D

2.9A, 150V , RDS(ON) 255 m N-Ch Enhancement Mode Power MOSFET 12-May-2011 Rev. B Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test conditions Static Gate-Threshold Voltage V GS(th) 1 - - V V DS=VGS, ID=250μA Gate-Body Leakage I GSS - - ±10 nA V DS=0, VGS= ±20V - - 1 V DS=120V, VGS=0 Zero Gate Voltage Drain Current I DSS - - 25 μA VDS=120V, VGS=0, TJ= 55°C On-State Drain Current 1 I D(on) 1.5 - - A V DS=5V, VGS=10V - - 255 V GS=10V, ID=2.3A Drain-Source On-Resistance 1 R DS(ON) - - 290 mΩ VGS=4.5V, ID=2.2A Forward Transconductance 1 g fs - 10 - S V DS=15V, ID=2.3A Diode Forward Voltage V SD - 0.7 - V I S=2A, VGS=0 Dynamic 2 Input Capacitance C iss - 920 Output Capacitance C oss - 101 Reverse Transfer Capacitance C rss - 77 pF VDS=15V VGS=0 f=1MHz Total Gate Charge Q g - 12 - Gate-Source Charge Q gs - 3.3 - Gate-Drain Charge Q gd - 6.5 - nC ID=2.3A VDS=75V VGS=4.5V Turn-On Delay Time T d(on) - 10 - Rise Time T r - 11 - Turn-Off Delay Time T d(off) - 59 - Fall Time T f - 23 - ns VDD=75V ID=2.3A VGEN=10V RL= 32.3Ω RGEN=6Ω Notes: 1 Pulse test ：PW ≦ 300 μs duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing.

2.9A, 150V , RDS(ON) 255 m N-Ch Enhancement Mode Power MOSFET 12-May-2011 Rev. B Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES

2.9A, 150V , RDS(ON) 255 m N-Ch Enhancement Mode Power MOSFET 12-May-2011 Rev. B Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES