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Technical content

18.6 A, 30 V , RDS(ON) 6 m

N-Ch Enhancement Mode Power MOSFET 10-Dec-2010 Rev. B Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A H B M D C J K F L E N G

DESCRIPTION

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

FEATURES

 Low RDS(on) provides higher efficiency and extends battery life.  Low thermal impedance copper leadframe SOP-8 saves board space.  Fast switching speed.  High performance trench technology.

PACKAGE INFORMATION

SOP-8 2.5K 13’ inch MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS ±20 V ID @ TA = 25°C 18.6 A Continuous Drain Current 1 ID @ TA = 70°C 15.7 A Pulsed Drain Current 2 I DM 60 A Continuous Source Current (Diode Conduction) 1 I S 2.9 A PD @ TA = 25°C 3.1 W Total Power Dissipation 1 PD @ TA = 70°C 2.2 W Operating Junction & Storage Temperature Range T J, TSTG -55 ~ 150 °C Thermal Resistance Ratings t ≦ 10 sec 40 °C / W Thermal Resistance Junction-Ambient (Max.) 1 Steady State RθJA 80 °C / W Notes 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. SOP-8 A 5.80 6.20 H 0.35 0.49 B 4.80 5.00 J 0.375 REF. C 3.80 4.00 K 45 ° D 0 ° 8 ° L 1.35 1.75 E 0.40 0.90 M 0.10 0.25 F 0.19 0.25 N 0.25 REF. G 1.27 TYP. G S S S D D D D

N-Ch Enhancement Mode Power MOSFET 10-Dec-2010 Rev. B Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Gate-Threshold Voltage V GS(th) 1 - 3 V V DS= VGS, ID= 250μA Gate-Body Leakage I GSS - - 100 nA V DS= 0V, VGS= 20V - - 1 μA V DS= 24V, VGS= 0V Zero Gate Voltage Drain Current I DSS - - 5 μA V DS= 24V, VGS= 0V, TJ= 55°C On-State Drain Current 1 I D(on) 30 - - A V DS= 5V, VGS= 10V - - 6 V GS= 10V, ID= 18.6A Drain-Source On-Resistance 1 R DS(ON) - - 8 mΩ VGS= 4.5V, ID= 16.1A Forward Transconductance 1 g fs - 90 - S V DS= 15V, ID= 18.6A Diode Forward Voltage V SD - 0.7 - V I S= 2.3A, VGS= 0V Dynamic 2 Total Gate Charge Q g - 25 - Gate-Source Charge Q gs - 6 - Gate-Drain Charge Q gd - 9 - nC ID= 18.6A VDS= 15V VGS= 4.5V Turn-On Delay Time T d(on) - 20 - Rise Time T r - 13 - Turn-Off Delay Time T d(off) - 82 - Fall Time T f - 43 - nS VDD= 15V ID= 1A VGEN= 10V RL= 6Ω Notes 1. Pulse test ：PW ≦ 300 μs duty cycle ≦ 2%. 2. Guaranteed by design, not s ubject to production testing.

N-Ch Enhancement Mode Power MOSFET 10-Dec-2010 Rev. B Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTICS CURVE

N-Ch Enhancement Mode Power MOSFET 10-Dec-2010 Rev. B Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTICS CURVE