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Technical content
6.8A, 30V , RDS(ON) 26m Dual-N Enhancement Mode Power MOSFET 18-Feb-2011 Rev. B Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A H B M D C J K F L E N G 4228SS = Date Code RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSG4228 provide the designer with the best Combination of fast swit ching, ruggedized device design, Ultra low on-resistance and cost-effectiveness.
FEATURES
Low on-resistance Simple Drive Requirement Double-N MosFET Package MARKING CODE
PACKAGE INFORMATION
SOP-8 3K 13’ inch ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS ±20 V TA = 25°C 6.8 Continuous Drain Current 3 TA = 70°C ID 5.5 A Pulsed Drain Current 1 I DM 40 A Power Dissipation 1 P D 2 W Maximum Junction to Ambient 3 R θJA 62.5 °C / W Linear Derating Factor 0.016 W / °C Operating Junction & Storage Temperature Range T J, TSTG -55~150 °C SOP-8 A 5.80 6.20 H 0.35 0.49 B 4.80 5.00 J 0.375 REF. C 3.80 4.00 K 45 ° D0 ° 8 ° L 1.35 1.75 E 0.40 0.90 M 0.10 0.25 F 0.19 0.25 N 0.25 REF. G 1.27 TYP. G S G S D D D D
6.8A, 30V , RDS(ON) 26m Dual-N Enhancement Mode Power MOSFET 18-Feb-2011 Rev. B Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test condition Static Drain-Source Breakdown Voltage BV DSS 30 - - V V GS=0V, ID=250μA Breakdown Voltage Temp. Coefficient BV△ DS/T△ j - 0.03 - V / °C Reference to 25°C, I D =1mA Gate-Threshold Voltage V GS(th) 1 - 3 V V DS=VGS, ID =250μA Gate-Body Leakage I GSS - - ±100 nA V GS=±20V - - 1 μA V DS=30V,VGS=0 Zero Gate Voltage Drain Current I DSS - - 25 μA V DS=24V,VGS=0 - - 26 V GS=10V, ID =6A Drain-Source On-Resistance 2 R DS(ON) - - 40 mΩ VGS=4.5V, ID =4A Total Gate Charge 2 Q g - 9 15 Gate-Source Charge Q gs - 2 - Gate-Drain (“Miller”) Charge Q gd - 6 - nC ID= 6.8A VDS= 24V VGS= 4.5V Turn-On Delay Time 2 T d(on) - 10 - Rise Time T r - 9 - Turn-Off Delay Time T d(off) - 18 - Fall Time T f - 6 - nS VDS= 15V ID= 1A VGS= 10V RG= 3.3Ω RD= 15Ω Input Capacitance C iss - 580 930 Output Capacitance C oss - 150 - Reverse Transfer Capacitance C rss - 108 - pF VGS=0V VDS=25V f=1.0MHz Forward Transfer Conductance G fs - 15 - S V DS=10V, ID=6A Source-Drain Diode Forward On Voltage 2 V DS - - 1.3 V I S=1.7A, VGS=0V, Tj=25°C Reverse Recovery Time 2 T rr - 15 - nS Reverse Recovery Charge Q rr - 9 - nC IS =6.8A, VGS =0V dl/dt=100A/μs Notes: 1 Pulse width limited by Max. junction temperature. 2 Pulse width 300us, duty cycle 2%. 3 Surface mounted on 1 inch2 copper pad of FR4 board; 135°C/W when mounted on min. copper pad.
6.8A, 30V , RDS(ON) 26m Dual-N Enhancement Mode Power MOSFET 18-Feb-2011 Rev. B Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTICS CURVE
6.8A, 30V , RDS(ON) 26m Dual-N Enhancement Mode Power MOSFET 18-Feb-2011 Rev. B Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTICS CURVE