SSG4224 SECOS | Alldatasheet
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Features
- Simple Drive Requirement * Low On-Resistance 4224 4224 * Dual N MOSFET Package The SSG RoHS Compliant Product provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 0.25 Dimensions in millimeters 6.20 5.80 1.27Typ.0.35 0.49 4.80 5.00 0.100.25 1.35 1.75 0.40 0.90 0.19 0.25 3.80 4.00
0.375 REF
o o o S1 G1 S2 G2 D1 D1 D2 D2 SS Date Code 578 2 3 4 SOP-8 01-Jun-2002 Rev. A Page 1 of 4 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current Parameter Symbol Ratings Unit Thermal Data Parameter Symbol Ratings Unit Thermal Resistance Junction-ambient Max. A V V A A ID@TA=70 /W C W / C C W VDS VGS ID@TA=25 IDM PD@TA=25 Tj, Tstg Rthj-a ±20 0.016 -55~+150 62.5 3 o o o C o C o C o Absolute Maximum Ratings
Electrical Characteristics( Tj=25 C Unless otherwise specified) Total Gate Charge RDS(ON) Parameter Symbol Max.Typ. Test ConditionMin. Unit Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 ) Static Drain-Source On-Resistance Drain-Source Leakage Current (Tj=70 ) Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance BVDSS BVDS/ Tj VGS(th) IGSS IDSS Crss Qg Qgs Qgd Td(ON) Td(Off) Tr Ciss Coss Tf 0.03 1.0 3.0 100 1910 400 280 V V nA uA uA m nC nS pF Ω VGS=0V VDS=25V f=1.0MHz VDD=15V ID=1A VGS=10V RG=3.3 RD=15 Ω Ω ID=10A VDS=24V VGS=4.5V VGS=10V, ID=10A VGS=4.5V, ID=7A VGS=0V, ID=250uA VGS= 2 V±0 VDS=30V,VGS=0 VDS=24V,VGS=0 VDS=VGS, ID=250uA Reference to 25 , ID=1mA Forward Transconductance Gfs S16 VDS=10V, ID=10A_ 3070 Co Co Co Co Gate Resistance 0.9 __ Rg f=1.0MHzΩ o Source-Drain Diode Parameter Symbol Max.Typ. Test ConditionMin. Unit Forward On Voltage VDS __ IS =1.7A, VGS=0V.Tj=25 C =10A, VGS=0V. V1.2 Notes: 1.Pulse width limited by safe operating area. 2.Pulse width 300us, dutycycle 2%. Reverse Recovery Time Reverse Recovery Charge _ _ 30 _ Trr Qrr nC nS dl/dt=100A/us IS 3.Surface mounted on 1 inch copper pad of FR4 board O C/W when mounted on min. copper pad. ; 135 o http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 Elektronische Bauelemente SSG4224 10A,30V,RDS(ON) 14m N-Channel Enhancement Mode Power Mos.FET Ω
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode Elektronische Bauelemente SSG4224 10A,30V,RDS(ON) 14m N-Channel Enhancement Mode Power Mos.FET Ω
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4 Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Elektronische Bauelemente SSG4224 10A,30V,RDS(ON) 14m N-Channel Enhancement Mode Power Mos.FET Ω