SSG3110

SSG3110 SECOS | Alldatasheet

Document overview

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• PDF pages: 4

Technical content

2.2A, 100V , R DS(O/glyph1197) 310 m ΩΩ ΩΩ Dual-/glyph1197 Enhancement Mode Power MOSFET 02-Sep-2016 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A H B M D C J K F L E N G RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

SSG3110 is the highest performance trench dual N-ch MOSFETs with extreme high cell density, which provides excellent R DS(ON) and gate charge for most synchronous buck converter applications.

FEATURES

/circle6 Advanced high cell density Trench technology /circle6 Super low gate charge /circle6 Excellent CdV/dt effect decline /circle6 Green Device Available

PACKAGE INFORMATION

SOP-8 2.5K 13 inch ABSOLUTE MAXIMUM RATINGS Parameter Symbol Rating Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V TA =25°C 2.2 Continuous Drain Current@ V GS =10V 1 TA =70°C ID 1.5 A Pulsed Drain Current 3 IDM 5.5 A Power Dissipation@ TA =25°C PD 1.5 W Maximum Thermal Resistance from Junction to Ambient 1 83 Maximum Thermal Resistance from Junction to Ambient RθJA 135 °C / W Maximum Thermal Resistance from Junction to Case 1 R θJC 50 °C / W Operating Junction and Storage Temperature Range TJ, T STG -55~150 °C G S G S D D D D SOP-8 A 5.80 6. 20 H 0.33 0.51 B 4.70 5. 10 J 0. 375 REF. C 3.80 4.00 K 45 °REF. D 0° 8° L 1.3 5 1. 75 E 0.40 1.27 M 0.10 0.25 F 0. 10 0. 25 N 0.25 REF. G 1.27 TYP.

2.2A, 100V , R DS(O/glyph1197) 310 m ΩΩ ΩΩ Dual-/glyph1197 Enhancement Mode Power MOSFET 02-Sep-2016 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS

(T J=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Drain-Source Breakdown Voltage BV DSS 100 - - V V GS =0, I D=250µA Gate-Threshold Voltage V GS(th) 1 - 2.5 V V DS =VGS , I D=250µA Gate-Body Leakage Current I GSS - - ±100 nA V GS = ±20V - - 1 V DS =80V, V GS =0, T J=25°C Zero Gate Voltage Drain Current IDSS - - 5 µA VDS =80V, V GS =0, T J=55°C - 260 310 V GS =10V, I D=2A Drain-Source On-Resistance 2 R DS(ON) - 270 320 mΩ VGS =4.5V, I D=1A Forward Transconductance g fs - 4 - S V DS =5V, I D=2A Input Capacitance C iss - 508 - Output Capacitance C oss - 29 - Reverse Transfer Capacitance Crss - 16.4 - pF VDS =15V VGS =0 f=1MHz Total Gate Charge Q g - 9.1 - Gate-Source Charge Q gs - 2 - Gate-Drain Charge Q gd - 1.4 - nC VDS =50V, VGS =10V ID=2A Turn-On Delay Time T d(on) - 2 - Rise Time T r - 21.6 - Turn-Off Delay Time T d(off) - 11.2 - Fall Time T f - 18.8 - nS VDD=50V VGS=10V ID=2A RL=30Ω RG =3.3Ω Source-Drain Diode Diode Forward Voltage 2 V SD - - 1.2 V I S=1A, V GS =0 Continuous Source Current 1 I S - - 2.2 A Pulsed Source Current 3 I SM - - 5.5 A VD=VG =0V, Force Current Reverse Recovery Time T rr - 17.5 - nS Reverse Recovery Charge Q rr - 14 - nC IF=2A, dl/dt=100A/µs, TJ=25°C Notes: 1. Surface mounted on a 1 inch 2 FR-4 board with 2OZ copper pad. 2. Pulse Test: Pulse width ≦300µs, duty cycle ≦2%. 3. The power dissipation is limited by 150°C junction temperature.

2.2A, 100V , R DS(O/glyph1197) 310 m ΩΩ ΩΩ Dual-/glyph1197 Enhancement Mode Power MOSFET 02-Sep-2016 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTICS CURVE

2.2A, 100V , R DS(O/glyph1197) 310 m ΩΩ ΩΩ Dual-/glyph1197 Enhancement Mode Power MOSFET 02-Sep-2016 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTICS CURVE