SSG2310B-C SECOS | Alldatasheet
Document overview
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Technical content
3A, 60V , R DS(O/glyph1197) 90mΩ /glyph1197-Ch Enhancement Mode Power MOSFET 12-Feb-2018 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SOP -8 2310B /box4/box4/box4/box4 /box4/box4/box4/box4 /box4/box4/box4/box4 /box4/box4/box4/box4 A H B M D C J K F L E N G RoHS Compliant Product A suffix of “-C” specifies halogen free
DESCRIPTION
The SSG2310B-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent R DS(ON) and gate charge for most of the small power switching and load switch applications. The SSG2310B-C meet the RoHS and Green Product requirement with full function reliability approved.
FEATURES
/circle6 Advanced High Cell Density Trench Technology /circle6 Super Low Gate Charge /circle6 Green Device Available MARKING
PACKAGE INFORMATION
SOP-8 2.5K 13 inch ORDER INFORMATION ABSOLUTE MAXIMUM RATINGS Parameter Symbol Ratings Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V TA =25°C 3 Continuous Drain Current 1, @VGS =10V TA =70°C ID 2.4 A Pulsed Drain Current 3 IDM 12 A Total Power Dissipation T A =25°C P D 1.5 W Operating Junction and Storage Temperature Range TJ, T STG -55~150 °C Thermal Resistance Ratings Maximum Thermal Resistance Junction-Ambient 1 85 Maximum Thermal Resistance Junction-Ambient 2 RθJA 135 Maximum Thermal Resistance Junction-Case 1 R θJC 25 °C/W Part Number Type SSG2310B-C Lead (Pb)-free and Halogen-free Date Code G S S S D D D D A 5. 79 6. 20 H 0 .33 0 .51 B 4.70 5. 11 J 0. 375 REF. C 3 .80 4.0 0 K 45 °REF. D 0 ° 8° L 1.3 1. 75 2 E 0.40 1.27 M 0 0 .25 F 0. 10 0. 25 N 0.25 REF. G 1.27 TYP.
3A, 60V , R DS(O/glyph1197) 90mΩ /glyph1197-Ch Enhancement Mode Power MOSFET 12-Feb-2018 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T J=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test condition s Drain-Source Breakdown Voltage BV DSS 60 - - V V GS =0, I D =250µA Gate Threshold Voltage V GS(th) 1 - 2.5 V V DS =V GS , I D =250µA Forward Transconductance g fs - 13 - S V DS =5V, I D =2A Gate-Source Leakage Current I GSS - - ±100 nA V GS = ±20V TJ=25°C - - 1 V DS =48V, V GS =0 Drain-Source Leakage Current T J=55°C IDSS - - 5 µA VDS =48V, V GS =0 - - 90 V GS =10V, I D =3A Static Drain-Source On-Resistance 4 R DS(ON) - - 100 mΩ VGS =4.5V, I D =2A Total Gate Charge Q g - 5 - Gate-Source Charge Q gs - 1.68 - Gate-Drain Change Q gd - 1.9 - nC ID =2A VDS =48V VGS =4.5V Turn-on Delay Time T d(on) - 1.6 - Rise Time T r - 7.2 - Turn-off Delay Time T d(off) - 25 - Fall Time T f - 14.4 - nS VDD =30V ID =2A VGS =10V RG =3.3Ω Input Capacitance C iss - 511 715 Output Capacitance C oss - 38 - Reverse Transfer Capacitance Crss - 25 - pF VGS =0 VDS =15V f=1MHz Source-Drain Diode Continuous Source Current 1 I S - - 3 A Pulsed Source Current 3 I SM - - 12 A Forward on Voltage 4 V SD - - 1.2 V I S=1A, V GS =0 Reverse Recovery Time T rr - 9.7 - nS Reverse Recovery Charge Q rr - 5.8 - nC IS=2A, V GS =0 dI/dt=100A/µs Notes: 1. Surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2. When mounted on Min. Copper pad. 3. Pulse width limited by maximum junction temperature, pulse width ≦300µs, duty cycle ≦2%. 4. The data tested by pulsed, pulse width ≦300µs, duty cycle ≦2%.
3A, 60V , R DS(O/glyph1197) 90mΩ /glyph1197-Ch Enhancement Mode Power MOSFET 12-Feb-2018 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TYPICAL CHARACTERISTICS CURVE
3A, 60V , R DS(O/glyph1197) 90mΩ /glyph1197-Ch Enhancement Mode Power MOSFET 12-Feb-2018 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TYPICAL CHARACTERISTICS CURVE