SSG200EF60E SSDI | Alldatasheet

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NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: G00003B DOC Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number/Ordering Information 1/ SSG200EF60E ___ └ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV S = S Level SSG200EF60E

200 AMP

600 VOLTS

Features:

  • Outstanding current capability
  • Low on-state conductive losses
  • Very simple gate drive design
  • Improved SOA characterization
  • Low input capacitance
  • High reverse voltage rating available
  • TX, TXV, S-Level screening available MAXIMUM RATINGS3/ SYMBOL VALUE UNIT Collector – Emitter Breakdown Voltage VCES 600 V Gate – Emitter Voltage VGES ±20 V Max. Continuous Collector Current @ TC = 25ºC @ TC = 90ºC IC1 IC2 200 100 A Pulsed Collector Current4/ I CM 300 A Clamped Inductive Load Current (TJ = 125ºC)5/ I LM 100 A Reverse Voltage Avalanche Energy (IC = 100A)4/ E ARV 5.6 mJ Operating & Storage Temperature T OP & TSTG -55 to +150 ºC Maximum Thermal Resistance (Junction to Case) R0JC 0.20 ºC/W Total Device Dissipation @ TC = 25ºC Dissipation Derating From @ TC = 25ºC to TC = 150ºC PD1 PD2 625 W W/ºC Milpack 3 NOTES: *Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%. 1/ For ordering information, price, operating curves, and availability - contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ Unless otherwise specified, all electrical characteristics @25 o 4/ Pulse duration limited by TJmax; repetitive rating. 5/ VCC=80% rated BVCES, VGE=15V, L=30uH, RG=10 Ω.

NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: G00003B DOC Solid State Devices, Inc. Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SSG200EF60E ELECTRICAL CHARACTERISTICS3/ SYMBOL MIN TYP MAX UNIT Collector - Emitter Breakdown Voltage (ICES = 250μA, VGE = 0V) BVCES 600 –– –– V Gate - Emitter Threshold Voltage (IC = 5mA, VCE = VGE) VGE(th) 2.5 5.5 6 V Collector - Emitter Saturation Voltage IC = 100A @ 25oC IC = 100A @ 100oC VCE(sat) –– 1.65 1.8 2.0 2.4 V Gate - Emitter Leakage Current (VGE = ±20V, VCE = 0V) IGES –– 0.01 1.0 μA Collector Leakage Current (VCE = 480 V, VGE = 0V, Tj = 25oC) (VCE = 600 V, VGE = 0V, Tj = 25oC) (VCE = 480 V, VGE = 0V, Tj = 125oC) ICES1 ICES2 ICES3 200 μA μA mA Forward Transconductance (IC = IC2, VCE = 10V) gfs 40 –– –– S Gate Charge Total Gate Charge Gate-Emitter Charge Gate-Collector Charge V GE = 15V IC = 10A VCE = 300V Qg(on) Qge Qgc 575 320 650 150 370 nC Capacitance Input Capacitance Output Capacitance Reverse Transfer Capacitance V GE = 0V VCE = 25V f = 1 MHz Cies Coes Cres 8400 1400 600 15,000 2,000 1,000 pF Inductive Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time V GE = 15V IC = 45A RG = 10Ω L = 100µH td(on) tr td(off) tf 150 140 600 300 500 175 1000 500 nsec ANTI-PARALLEL DIODE Peak Current Ipk –– –– 200 A Peak Inverse Voltage PIV –– –– 600 V Average Current Iavg –– –– 100 A Diode Forward Voltage @ IF=100A, TJ=25 oC VF –– 1.1 1.5 V Reverse Recovery Time (If=40A, di/dt=200A/µsec) trr –– 200 400 nsec PACKAGE OUTLINE: MILPACK3 PIN OUT: PIN 1: COLLECTOR PIN 2: EMITTER PIN 3: GATE PIN 4: EMITTER