SSG19N04-C SECOS | Alldatasheet

Document overview

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Technical content

19A, 40V , R DS(O/glyph1197) 8.5mΩ /glyph1197-Ch Enhancement Mode Power MOSFET 24-Jan-2018 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SOP -8 19N04 /box4/box4/box4/box4 /box4/box4/box4/box4 /box4/box4/box4/box4 /box4/box4/box4/box4 A H B M D C J K F L E N G RoHS Compliant Product A suffix of “-C” specifies halogen free

DESCRIPTION

The SSG19N04-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent R DS(ON) and gate charge for most of the synchronous buck converter applications. The SSG19N04-C meet the RoHS and Green Product requirement with full function reliability approved.

FEATURES

/circle6 Advanced High Cell Density Trench Technology /circle6 Super Low Gate Charge MARKING

PACKAGE INFORMATION

SOP-8 2.5K 13 inch ORDER INFORMATION ABSOLUTE MAXIMUM RATINGS Parameter Symbol Ratings Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V TC =25°C 19 TC =100°C 14 TA=25°C 10 Continuous Drain Current 1 , @VGS =10V TA=70°C ID A Pulsed Drain Current 3 IDM 50 A Total Power Dissipation T A=25°C P D 1.5 W Operating Junction and Storage Temperature Range TJ, T STG -55~150 °C Thermal Resistance Ratings Maximum Thermal Resistance Junction-Ambient 1 83 Maximum Thermal Resistance Junction-Ambient 2 RθJA 125 Maximum Thermal Resistance Junction-Case 1 R θJC 25 °C/W Part Number Type SSG19N04-C Lead (Pb)-free and Halogen-free Date Code G S S S D D D D A 5. 79 6. 20 H 0.33 0.51 B 4.70 5. 1 1 J 0. 375 REF. C 3.80 4.00 K 45 °REF. D 0° 8° L 1.3 1. 75 2 E 0.40 1.27 M 0 0.25 F 0. 10 0. 25 N 0.25 REF. G 1.27 TYP.

19A, 40V , R DS(O/glyph1197) 8.5mΩ /glyph1197-Ch Enhancement Mode Power MOSFET 24-Jan-2018 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T J=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test condition s Drain-Source Breakdown Voltage BV DSS 40 - - V V GS=0, I D =250µA Gate Threshold Voltage V GS(th) 1 - 2.5 V V DS =V GS , I D =250µA Forward Transconductance g fs - 39 - S V DS =5V, I D =12A Gate-Source Leakage Current I GSS - - ±100 nA V GS = ±20V TJ=25°C - - 1 V DS =32V, V GS =0 Drain-Source Leakage Current T J=55°C IDSS - - 5 µA VDS =32V, V GS =0 - - 8.5 V GS =10V, I D =12A Static Drain-Source On-Resistance 4 R DS(ON) - - 10 mΩ VGS =4.5V, I D =10A Total Gate Charge Q g - 18.8 - Gate-Source Charge Q gs - 4.7 - Gate-Drain Change Q gd - 8.2 - nC ID =12A VDS =20V VGS =4.5V Turn-on Delay Time T d(on) - 14.3 - Rise Time T r - 2.6 - Turn-off Delay Time T d(off) - 77 - Fall Time T f - 4.8 - nS VDD =15V ID =1A VGS =10V RG=3.3Ω Input Capacitance C iss - 2332 - Output Capacitance C oss - 193 - Reverse Transfer Capacitance Crss - 138 - pF VGS =0 VDS =15V f=1MHz Source-Drain Diode Forward on Voltage 4 V SD - - 1.2 V I S=1A, V GS =0 Continuous Source Current 1 I S - - 19 A Pulsed Source Current 3 I SM - - 50 A Notes: 1. Surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2. When mounted on Min. Copper pad. 3. Pulse width limited by maximum junction temperature, pulse width ≦300 µs, duty cycle ≦2%. 4. The data tested by pulsed, pulse width ≦300 µs, duty cycle ≦2%.

19A, 40V , R DS(O/glyph1197) 8.5mΩ /glyph1197-Ch Enhancement Mode Power MOSFET 24-Jan-2018 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TYPICAL CHARACTERISTICS CURVE

19A, 40V , R DS(O/glyph1197) 8.5mΩ /glyph1197-Ch Enhancement Mode Power MOSFET 24-Jan-2018 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TYPICAL CHARACTERISTICS CURVE