SSG13P03-C SECOS | Alldatasheet

Document overview

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Technical content

-13A, -30V , R DS(ON) 15mΩ P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 29-May-2018 Rev. B Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A H B M D C J K F L E N G 13P03SC /box4/box4/box4/box4 /box4/box4/box4/box4 /box4/box4/box4/box4 /box4/box4/box4/box4 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

The SSG13P03-C is the highest performance trench P-Ch MOSFETs with extreme high cell density, which provide excellent R DS(ON) and gate charge for most of the synchronous buck converter applications. The SSG13P03-C meet the RoHS and Green Product requirement with full function reliability approved.

FEATURES

/circle6 Advanced High Cell Density Trench Technology /circle6 Super Low Gate Charge /circle6 Green Device Available MARKING

PACKAGE INFORMATION

Parameter Symbol Ratings Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current 1, @VGS =10V TC =25° C ID -13 A TC =100° C -9.1 TA=25° C -8.2 TA=70° C -6.6 Pulsed Drain Current 3 IDM -50 A Total Power Dissipation T A=25° C P D 1.5 W Operating Junction & Storage Temperature Range T J, T STG -55~150 ° C Thermal Data Thermal Resistance Junction-Ambient 1 R θJA ° C/W Thermal Resistance Junction-Ambient 2 125 Thermal Resistance Junction-Case 1 R θJC 25 Part Number Type SSG13P03-C Lead (Pb)-free and Halogen-free SOP-8 S S S G D D D D REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 5. 79 6. 20 H 0.33 0.51 B 4.70 5. 11 J 0. 375 REF. C 3.80 4.00 K 45 °REF. D 0° 8° L 1.3 1. 75 2 E 0.40 1.27 M 0 0.25 F 0. 10 0. 25 N 0.25 REF. G 1.27 TYP. Date Code

-13A, -30V , R DS(ON) 15mΩ P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 29-May-2018 Rev. B Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T J=25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BV DSS -30 - - V V GS =0, I D = -250 µA Gate Threshold Voltage V GS(th) -1 - -2.5 V V DS =V GS , I D = -250 µA Forward Transconductance g fs - 24 - S V DS = -5V, I D = -8A Gate-Source Leakage Current I GSS - - ±100 nA V GS = ±20V Drain-Source Leakage Current TJ=25° C IDSS - - -1 µA VDS = -24V, VGS =0 TJ=55° C - - -5 V DS = -24V, VGS =0 Static Drain-Source On-Resistance 4 R DS(ON) - - 15 m Ω VGS = -10V, I D = -8A Total Gate Charge Q g - 21.8 - nC ID = -8A VDS = -15V VGS = -4.5V Gate-Source Charge Q gs - 7.9 - Gate-Drain Charge Q gd - 6.5 - Turn-on Delay Time T d(on) - 10 - nS VDD = -15V ID = -8A VGS = -10V R G =3.3 Ω Rise Time Tr - 39 - Turn-off Delay Time T d(off) - 71.2 - Fall Time Tf - 28.6 - Input Capacitance C iss - 2215 - pF VGS =0 VDS = -15V f=1MHz Output Capacitance C oss - 310 - Reverse Transfer Capacitance C rss - 237 - Source-Drain Diode Continuous Source Current 1 I S - - -8.2 A Pulsed Source Current 3 I SM - - -16.4 Diode Forward Voltage 4 V SD - - -1.2 V V GS =0, IS= -1A, TJ=25° C Reverse Recovery Time T rr - 16 - nS IF= -13A, dI/dt=100A/ µs, TJ=25° C Reverse Recovery Charge Q rr - 8 - nC Notes: 1. Surface Mounted on 1”x1” FR4 Board with 2OZ copper. 2. When mounted on Min. Copper pad. 3. Pulse width limited by maximum junction temperature. 4. Pulse Test: Pulse Width ≦300 µs, Duty Cycle ≦2%.

-13A, -30V , R DS(ON) 15mΩ P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 29-May-2018 Rev. B Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES

-13A, -30V , R DS(ON) 15mΩ P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 29-May-2018 Rev. B Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES